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Электронный компонент: APT50GF60JU2

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APT50GF60JU2
A
P
T
5
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
1 - 8




ISOTOP

Absolute maximum ratings
Symbol Parameter
Max
ratings
Unit
V
CES
Collector - Emitter Breakdown Voltage
600
V
I
C1
T
C
= 25C
75
I
C2
Continuous Collector Current
T
C
= 90C
50
I
CM
Pulsed Collector Current
T
C
= 25C
160
A
V
GE
Gate Emitter Voltage
20
V
P
D
Maximum Power Dissipation
T
C
= 25C
277
W
I
LM
RBSOA clamped Inductive load Current R
G
=11
T
C
= 25C
100
A
IF
AV
Maximum Average Forward Current
Duty cycle=0.5 T
C
= 80C
30
IF
RMS
RMS Forward Current (Square wave, 50% duty)
39
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
K
E
C
G


V
CES
= 600V
I
C
= 50A @ Tc = 90C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
- Low
voltage
drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
ISOTOP
Boost chopper
NPT IGBT
K
C
G
E
APT50GF60JU2
A
P
T
5
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
2 - 8
All ratings @ T
j
= 25C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage
V
GE
= 0V, I
C
= 1mA
600
V
T
j
= 25C
40
I
CES
Zero Gate Voltage Collector Current
V
GE
= 0V
V
CE
= 600V
T
j
= 125C
1000
A
T
j
= 25C
2.1
2.7
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 50A
T
j
= 125C
2.2
2.8
V
V
GE(th)
Gate Threshold Voltage
V
GE
= V
CE
, I
C
= 700A
4.5
5.5
6.5
V
I
GES
Gate Emitter Leakage Current
V
GE
= 20V, V
CE
= 0V
100
nA

Dynamic Characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
C
ies
Input
Capacitance
2250
C
oes
Output
Capacitance
255
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz
155
pF
Q
g
Total gate Charge
175
Q
ge
Gate Emitter Charge
18
Q
gc
Gate Collector Charge
V
GS
= 15V
V
Bus
= 300V
I
C
= 50A
100
nC
T
d(on)
Turn-on Delay Time
29
T
r
Rise Time
118
T
d(off)
Turn-off Delay Time
150
T
f
Fall Time
Resistive Switching (25C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 50A
R
G
= 10
W
190
ns
T
d(on)
Turn-on Delay Time
30
T
r
Rise
Time
80
T
d(off)
Turn-off Delay Time
240
T
f
Fall
Time
43
ns
E
ts
Total switching Losses
Inductive Switching (25C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 50A
R
G
= 10
W
3.6 mJ
T
d(on)
Turn-on Delay Time
28
T
r
Rise
Time
75
T
d(off)
Turn-off Delay Time
265
T
f
Fall Time
185
ns
E
on
Turn-on Switching Energy
1.8
E
off
Turn-off Switching Energy
2.4
E
ts
Total switching Losses
Inductive Switching (150C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 50A
R
G
= 10
W
4.2
mJ
APT50GF60JU2
A
P
T
5
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
3 - 8
Diode ratings and characteristics
Symbol Characteristic
Test
Conditions
Min Typ Max Unit
I
F
= 30A
1.6
1.8
I
F
= 60A
1.9
V
F
Diode Forward Voltage
I
F
= 30A
T
j
= 125C
1.4
V
V
R
= 600V
T
j
= 25C
250
I
RM
Maximum Reverse Leakage Current
V
R
= 600V
T
j
= 125C
500
A
C
T
Junction
Capacitance
V
R
=
200V
44 pF
Reverse Recovery Time
I
F
=1A,V
R
=30V
di/dt =100A/s
T
j
= 25C
23
T
j
= 25C
85
t
rr
Reverse Recovery Time
T
j
= 125C
160
ns
T
j
= 25C
4
I
RRM
Maximum Reverse Recovery Current
T
j
= 125C
8
A
T
j
= 25C
130
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 400V
di/dt =200A/s
T
j
= 125C
700
nC
t
rr
Reverse Recovery Time
70
ns
Q
rr
Reverse Recovery Charge
1300
nC
I
RRM
Maximum Reverse Recovery Current
I
F
= 30A
V
R
= 400V
di/dt =1000A/s
T
j
= 125C
30 A


Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
0.45
R
thJC
Junction
to
Case
Diode
1.21
R
thJA
Junction to Ambient (IGBT & Diode)
20
C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500 V
T
J
,T
STG
Storage
Temperature
Range
-55
150
T
L
Max Lead Temp for Soldering:0.063" from case for 10 sec
300
C
Torque Mounting
torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt Package
Weight
29.2 g
APT50GF60JU2
A
P
T
5
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
4 - 8
Typical IGBT Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
T
h
er
m
a
l Im
p
e
d
a
n
c
e

(

C/W
)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
APT50GF60JU2
A
P
T
5
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
5 - 8
APT50GF60JU2
A
P
T
5
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
6 - 8
Typical Diode Performance Curve
APT50GF60JU2
A
P
T
5
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
7 - 8
APT50GF60JU2
A
P
T
5
0G
F
60J
U
2
R
e
v 0 A
p
r
i
l
,
2004
APT website http://www.advancedpower.com
8 - 8
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.

ISOTOP
is a Registered Trademark of SGS Thomson

APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
Emitter
Gate
Collector
Cathode