Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 6/01A
HIP3TM Variable Attenuator
0.801.00 GHz
Features
I +40 dBm IP3 Typical
I Low Loss 1 dB Typical
I Attenuation 30 dB Typical
I Good VSWR <1.5:1 Typical
I Low Phase Shift
AV111-12
Description
The AV111-12 is a current controlled variable attenuator
from Alpha's series of HIP3TM components. It is designed
to meet the wide dynamic range required in spread
spectrum wireless base station applications. A monolithic
quadrature hybrid is teamed with a silicon PIN diode pair
in a plastic surface mount package reducing size and
assuring consistency from part to part.
Parameter
Min.
Typ.
Max.
Unit
Frequency
0.80
1.0
GHz
Insertion Loss (0 mA Control Current)
1.0
1.5
dB
Attenuation @ 1.2 mA Control Current (900 MHz)
17.5
21.5
dB
VSWR All Ports
1.5
1.8
Input 3rd Order Intercept
+37
+40
dBm
Relative Phase Shift Up to 20 dB Attenuation
1
7
10
Deg.
Group Delay
0.4
0.9
ns
Electrical Specifications at 25C
Parameter
2
Condition
Frequency
Min.
Typ.
Max.
Unit
Switching Characteristics
3
Rise, Fall (10/90% or 90/10% RF)
5
s
On, Off (50% CTL to 90/10% RF)
8
s
Video Feedthru (Peak)
5
mV
Maximum Input Power for <1 dB
+15
dBm
Attenuation Variation
Operating Characteristics at 25C (0, +5 V)
1. When built with external components as shown in the Pin Out diagram.
2. All measurements made in a 50
system, unless otherwise specified.
3. 04 mA square wave total control current.
SOIC-8
SOIC-8
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 6/01A
HIP3TM Variable Attenuator 0.801.00 GHz
AV111-12
VSWR
Input/Output VSWR vs. Current
Current (mA)
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
0.5
0
1.0
1.5
2.0
2.5
3.0
800 MHz
900 MHz
1 GHz
Atten
uation (dB)
0
0.5
1.0
1.5
2.0
Attenuation vs. Current
-50
-40
-30
-20
-10
-45
-35
-25
-15
-5
0
Current (mA)
1000 MHz
900 MHz
800 MHz
Relativ
e Phase Shift (Deg
rees)
Relative Phase vs. Frequency
0
4
8
12
16
20
24
Frequency (GHz)
0.80
0.84
0.88
0.92
0.96
1.00
0.5 mA
0 mA
1.0 mA
1.2 mA
1.4 mA
Atten
uation (dB)
0.80
0.85
0.90
0.95
1.00
Attenuation vs. Frequency
-30
-25
-20
-15
-10
-5
0
Frequency (GHz)
0 mA
0.1 mA
0.5 mA
0.9 mA
1.2 mA
1.4 mA
Relative Phase vs. Attenuation
-25
-20
-15
-10
-5
0
5
10
15
20
25
Attenuation (dB)
Relativ
e Phase Shift (Deg
rees)
-35
-30
-25
-20
-15
-10
-5
0
800 MHz
900 MHz
1000 MHz
Current (mA)
400
600
700
900
500
800
1000
Typical PIN Diode Current vs. Voltage
0.01
0.1
1
100
10
Voltage (V)
Typical Performance Data
HIP3TM Variable Attenuator 0.801.00 GHz
AV111-12
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
3
Specifications subject to change without notice. 6/01A
Characteristic
Value
RF Input Power
0.5 W CW, 4 W @ 12.5%
Duty Cycle
Control Current
50 mA per Diode
Operating Temperature
-65 to +125C
Storage Temperature
-65 to +125C
Maximum Reverse Diode Voltage
-100 V
Electrostatic Discharge
+125 V
Absolute Maximum Ratings
Note: Operating this device above any of these parameters may cause
irreversible damage.
Recommended Board Layout
RF In/Out
RF In/Out
20 mil Diameter
Ground Via
Pin 1
22 nH
Bias Input
120 pF
0.018
680
SK38531
AV10
-12
SOIC-8
0.049
(1.24 mm)
0.016
(0.41 mm)
0.016 MAX.
(0.41 mm) x
45 CHAMFER
PIN 1
0.197 (5.00 mm)
0.189 (4.80 mm)
0.068
(1.73 mm) MAX.
0.010 (0.25 mm)
0.004 (0.10 mm)
0.010 (0.25 mm)
0.007 (0.17 mm)
0.158 (4.00 mm)
0.150 (3.80 mm)
8
MAX.
0.020 (0.51 mm) MAX.
0.244 (6.20 mm)
0.228 (5.80 mm)
0.050 (1.27 mm) BSC
PIN 8
PIN 1
INDICATOR
12
3
4
CONTROL
CURRENT
GND
220 pF
RF In
GND
680
87
6
5
GND
220 pF
100 nH
100 nH
RF Out
CONTROL
CURRENT
GND
Pin Out
CONTROL
CURRENT
CONTROL
CURRENT
RF OUT
RF IN
Connection Diagram
Material is 10 mil FR4.
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