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Электронный компонент: AV850M1-00

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Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
1
Specifications subject to change without notice. 2/00A
1850 GHz GaAs MMIC
Voltage Variable Attenuator
Features
I Single Voltage Control
I 40 dB Attenuation Range
I Balanced 0.25 m MESFET
Non-Reflective Design
I 100% On-Wafer RF and DC Testing
I 100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AV850M1-00
Description
Alpha's AV850M1-00 MMIC voltage variable attenuator is
a balanced configuration incorporating Lange couplers at
input and output. The attenuator has a typical insertion loss
of 2.5 dB over the 1840 GHz band with a worst-case
insertion loss of 3.5 dB across the full 1850 GHz band.
The attenuation range is 35 dB over the full 1850 GHz
band while typical I/P and O/P return loss is better than
13 dB for all attenuation states. The chip uses Alpha's
proven 0.25
m MESFET technology and is based upon
MBE layers and electron beam lithography for the highest
uniformity and repeatability. The MMICs employ surface
passivation to ensure a rugged, reliable part with
through-substrate via holes and gold-based backside
metallization to facilitate a conductive epoxy die attach
process. All chips are screened for insertion loss, full
attenuation and I/P and O/P match over the 1850 GHz
band for guaranteed performance.
Parameter
Condition
Symbol
Min.
Typ.
2
Max.
Unit
Maximum Attenuation
V
C
= 0 V
ISO
35
45
dB
Minimum Attenuation
V
C
= -5 V
I
L
2.5
3.5
dB
Input Return Loss
At Min. and Max. Attenuation
RL
I
-20
-12.5
dB
Output Return Loss
At Min. and Max. Attenuation
RL
O
-20
-12.5
dB
Input Power at 1 dB Gain Compression
P
1 dB
0
dBm
(For All Attenuation Levels)
1
Electrical Specifications at 25C (Frequency = 18, 24, 31, 38, 43, 50 GHz)
0.000
0.000
1.634
0.095
0.320
2.000
1.080
1.400
0.365
1.305
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic
Value
Operating Temperature (T
C
)
-55C to +90C
Storage Temperature (T
ST
)
-65C to +150C
Control Voltage (V
C
)
-7 V
DC
Power In (P
IN
)
30 dBm
Junction Temperature (T
J
)
175C
Absolute Maximum Ratings
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.
1850 GHz GaAs MMIC Voltage Variable Attenuator
AV850M1-00
2
Alpha Industries, Inc. [781] 935-5150
Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 2/00A
Attenuation vs. Frequency (By State)
Frequency (GHz)
-70
0
5
Max.
Min.
10
15
20
25
30
35
40
-60
-50
-40
-30
-20
-10
Atten
uation (dB)
0
Attenuation vs. Control Voltage
Voltage (V)
-70
0
0.5
1.0
1.5
2.0
2.5
-60
-50
-40
-30
-20
-10
Atten
uation (dB)
0
Insertion Loss vs. Frequency
Frequency (GHz)
-9
-7
-8
18
23
28
33
38
43
48
50
-6
-5
-4
-3
-2
-1
Inser
tion Loss (dB)
Retur
n Loss (dB)
0
-45
-35
-40
-30
-25
-20
-15
-10
-5
0
S
21
S
22
S
11
15
20
25
30
10
5
0
15
10
5
0
-5
Attenuation (dB)
Attenuation vs. 1.0 dB Compression Point
P
IN
at 1.0 dB Compression
(dBm)
20
F = 30 GHz
Typical Performance Data
RF
V
C
V
C
RF
Bias Arrangement
RF IN
RF OUT
V
C
V
C
Circuit Schematic
Bias must be applied to both V
C
. Voltage range is V
Low
= 0 V to V
High
= -5 V.
V
Low
corresponds to high attenuation state.