4 6 7 9
GND
3
1
10 12
11
8
180
0
CONT
"0"
+5V
5
RF
OUT
2
RF
IN
10
9
6
3
4
.530
.010
.200
.100
.100
.200
C
L
C
L
.060
.010
.530
.010
12
7
1
.060
.010
(GOLD PLT)
SHADED AREA IS
SQ. SQ.
12
1
.080 TYP
.043 TYP
SQ.
.360
.340 .380
.015 TYP
TYP
METALIZED GND PLANE
SQ.
TYP
GND PLANE AND BOTTOM
SURFACE OF LEADS ARE
FLUSH WITH SAME SURFACE
.135
.010
.025
.005
.002
.520 MAX
.xx = .02
.xxx = .010
T Y P I C A L P E R F O R M A N C E
a t 2 5
C
1000
400
100
40
10
4
1
FREQUENCY (MHz)
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
+8
+6
+4
+2
0
-2
-4
-6
-8
PHASE
DEVIA
T
ION
(DEG.)
VSWR
I.L. (dB)
I. LOSS
VSWR
PHASE
3000
Parameter
Min Typ
Max Units
Conditions
Operating Frequency
10
500
MHz
DC Current
0.3
2.0
mA
At +5 VDC Supply
Control Type
TTL
1 Line
Logic "1" = Phase Reversal
Control Current
High
0
20
A
VIH = +3.0 V
Low
0
+20
A
VIL = +0.6 V
Insertion Loss
1.0
1.5
dB
10 - 100 MHz
1.6
2.5
dB
100 - 500 MHz
Phase
Step
180
DEG
Accuracy
1.0
3.0
DEG
VSWR
1.28/1 1.4/1
Impedance
50
OHMS
Switching Speed
50
70
nSec
50% TTL to 90% / 10% RF
Transition (Rise/Fall) Time
35
50
nSec
90% / 10% or 10% / 90% RF
Switching
(Video)
Transients
22
50
mV
Peak Value
Intercept Points
2nd
+80
dBm
70 MHz / 50 MHz
3rd
+51
dBm
35 MHz / 50 MHz
RF Power
Operate
+17
+13
dBm
0.1 dB Compression
No Damage
+23
dBm
Operating Temperature
-55
+25
+85
C
TA
G U A R A N T E E D P E R F O R M A N C E
MODEL NO.
D B P 0 7 3 8
GaAs Bi-Phase Modulator
F E AT U R E S
10 - 500 MHz
1 Deg. Phase Accuracy
0.3 mA, +5 VDC
1.0 dB Insertion Loss
35 nSec Transition Time
50 nSec Switching Speed
22 mV Transients
TTL Control
.530 Sq. Surface Mount Package
BPM
D A I C O
I n d u s t r i e s
R e v. B / I s s . 1
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