FMM5803X
27.5-31.5GHz Power Amplifier MMIC
Item
Symbol
Drain Voltage
VDD
10
V
Gate Voltage
VGG
-3.0
V
Input Power
Pin
25
dBm
Storage Temperature
-65 to +175
C
Tstg
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.
3. This product should be hermetically packaged
Operating Backside Temperature
-40 to +85
C
Top
1
Edition 1.1
June 2000
Item
Symbol
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Input Return Loss
RLin
-
-
-12
dB
Output Return Loss
RLout
-
-8
-
dB
Frequency Range
f
27.5 - 31.5
GHz
Output Power at 1 dB G.C.P.
28
30
-
dBm
P
1dB
Power Gain at 1 dB G.C.P.
19*
17**
dB
G
1dB
G.C.P.: Gain Compression Point
Power-Added Efficiency
-
20
-
%
add
Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
Drain Current
-
700
950
mA
I
ddrf
10**
12**
12*
14*
VDD = 6V
f = 27.5 ~ 31.5 GHz
*: at f = 27.5-30.0 GHz
IDD = 650mA (Typ.)
ZS = ZL = 50
**: at f = 30.0-31.5 GHz
DESCRIPTION
The FMM5803X is a high-gain, wide band 3-stage
MMIC amplifier designed for operation in the 27.5-31.5 GHz
frequency range. This amplifier has an input and output
designed for use in 50 systems.This device is well suited for
point-to-point, and point-to-multi-point(LMDS) communication
applications.
FEATURES
High Output Power: P1dB = 30dBm (Typ.)
High Gain: G1dB = 14dB (Typ.)
High PAE: add = 20% (Typ.)
Wide Frequency Band: 27.5-31.5 GHz
Impedance Matched Zin/Zout = 50
0.25m PHEMT Technology
FMM5803X
27.5-31.5GHz Power Amplifier MMIC
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0200M200
CHIP OUTLINE
Unit: m
0
3340
VGG
VDD1
VDD2
VDD3
VDD4
VDD5
990
155
120
1030
2080
1925
RFin
RFout
970
1500
1500
2950
2950
3225
2010
1230
1230
270
2010
Chip Size: 334030m x 208030m
Chip Thickness: 7020m
Pad Dimensions: 1. DC 80m x 80m
2. RF 120m x 80m
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
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