FMM5807X
21-27GHz Power Amplifier MMIC
Item
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature
Symbol
VDD
VGG
10
-3.0
-65 to +175
V
V
Input Power
Pin
25
dBm
C
Tstg
Operating Backside Temperature
-40 to +85
C
Top
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
C)
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.
3. This product should be hermetically packaged.
1
Edition 1.2
January 2001
Item
Symbol
Output Return Loss
RLout
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25
C)
Power Gain at 1 dB G.C.P.
10
14
19
-
-8
-
dB
Input Return Loss
RLin
-
-
-12
dB
dB
Frequency Range
f
21 - 27
GHz
Output Power at 1 dB G.C.P.
28**
30**
-
27*
29*
-
dBm
P
1dB
G
1dB
G.C.P.: Gain Compression Point
Power-Added Efficiency
-
20
-
%
add
Drain Current
-
700
950
mA
Iddrf
VDD = 6V
f = 21 ~ 27 GHz
*: at f = 21-24 GHz
IDD
=
650mA (Typ.)
ZS = ZL = 50
**: at f = 24-27 GHz
Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)
DESCRIPTION
The FMM5807X is a high-gain, wide band 3-stage
MMIC amplifier designed for operation in the 21-27GHz
frequency range. This amplifier has an input and output
designed for use in 50
systems. This device is well suited
for millimeter wave radio applications.
FEATURES
High Output Power: P1dB = 30dBm (Typ.)
High Gain: G1dB = 14dB (Typ.)
High PAE:
add = 20% (Typ.)
Wide Frequency Band: 21-27 GHz
Impedance Matched Zin/Zout = 50
0.25m PHEMT Technology
FMM5807X
21-27GHz Power Amplifier MMIC
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0500M200
CHIP OUTLINE
Unit:
m
0
90
180
0
2200
185
0
0 105 265
620
2225
2950
3450
2950
Chip Size: 3450
30
m x 2200
30
m
Chip Thickness: 70
m
DC Pad Dimensions: VGG: 80 x 80
m
VDD: 100 x 100
m
RF Pad Dimensions: 120
m x 80
m
1330
1275
2015
2200
2110
2020
RFin
RFout
VGG1
1290
VDD2
VDD4
235
VDD1
VDD3
VDD5
3350
3450
VGG2
1290
620
2225
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
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