DESCRIPTION
The FMM5811GJ-1 is a high-gain, wide band 3-stage MMIC
amplifier designed for operation in the 17.7-23.6GHz
frequency range. This amplifier has an input and output
matching designed for use in a 50
systems.This device is
well suited for point-to-point radio applications.
FMM5811GJ-1
17.7-23.6GHz Power Amplifier MMIC
Item
Symbol
Drain-Source Voltage
VDD
10
V
Gate-Source Voltage
VGG
-7
V
Input Power
Pin
16
dBm
Storage Temperature
-55 to +125
C
Tstg
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
C)
Operating Backside Temperature
-40 to +85
C
Top
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
1
Edition 1.1
July 2001
Item
Symbol
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
C)
Input Return Loss
RLin
-
-
-7.0
dB
Output Return Loss
RLout
-
-5.0
-
dB
Frequency Range
f
17.7 - 23.6
GHz
Output Power at 1 dB G.C.P.
23.0
24.5
-
dBm
P
1dB
Power Gain at 1 dB G.C.P.
12
15
20
dB
G
1dB
G.C.P.: Gain Compression Point
Power-Added Efficiency
-
20
-
%
add
Gain Flatness
-
2.0
-
dB
G
Drain Current
-
250
400
mA
Iddrf
Iggrf
Gate Current
-
-7.5
-15.0
mA
VDD = 6V
VGG = -5V
f = 17.7 - 23.6 GHz
ZS = ZL = 50
FEATURES
High Output Power: P1dB = 24.5dBm (Typ.)
High Gain: G1dB = 15dB (Typ.)
High PAE:
add = 20% (Typ.)
Wide Frequency Band: 17.7-23.6GHz
Impedance Matched Zin/Zout = 50
0.25m PHEMT Technology
IMD vs. OUTPUT POWER
10
12
14
8
16
18
20
22
-60
-50
-40
-30
-20
-10
Total Output Power (dBm)
IMD (dBc)
VDD = 6V
VGG = -5V
f = 10MHz
17.7GHz IM3
23.6GHz IM5
17.7GHz IM5
23.6GHz IM3
21.2GHz IM5
21.2GHz IM3
FMM5811GJ-1
17.7-23.6GHz Power Amplifier MMIC
2
TOTAL OUTPUT POWER vs. FREQUENCY
18
19
20
17
21
23
24
22
14
16
18
20
22
24
26
28
Frequency (GHz)
Pout (dBm)
VDD = 6V
VGG = -5V
Pin 0dBm
4dBm
2dBm
6dBm
P1dB
P1dB & G1dB vs. VDD
4
5
6
18
20
22
24
26
28
VDD (V)
P1dB (dBm)
14
16
18
20
22
G1dB (dB)
VDD = 6V
VGG = -5V
17.7GHz P1dB
23.6GHz G1dB
17.7GHz G1dB
23.6GHz P1dB
21.2GHz G1dB
21.2GHz P1dB
P1dB
G1dB
RECOMMENDED BIAS CIRCUIT
3
2
1
4
5
6
50
50
50
50
1000pF
1000pF
1000pF
1000pF
VGG
VDD
VGG
RFin
RFout
VDD
Note 1: The R/C networks are recommended on the bias supply lines, close to the
package, to prevent video oscillations which could damage the module.
Note 2: Bias point VDD can be connected at the input side or at the output:
The two pins named VDD are internally connected. The same is true for VGG.
FMM5811GJ-1
17.7-23.6GHz Power Amplifier MMIC
3
21.6
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
250
10
24.0GHz
23.2
22.4
19.2
17.6
20.0
20.8
18.4
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S22
250
10
24.0GHz
22.4
23.2
19.2
17.6
20.0
20.8
21.6
18.4
S-PARAMETERS
VDD = 6V, VGG = -5V
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
17200
.088
61.4
5.077
15.8
.007
156.7
.412
107.9
17300
.068
63.2
5.315
2.7
.007
145.1
.385
104.3
17400
.050
76.7
5.571
-10.9
.007
136.2
.355
100.3
17500
.036
105.3
5.823
-25.0
.006
125.8
.322
96.0
17600
.043
149.0
6.101
-39.6
.006
117.2
.287
91.2
17700
.070
167.9
6.342
-54.5
.006
106.5
.249
85.7
17800
.103
174.2
6.549
-69.9
.006
97.4
.210
78.9
17900
.136
173.9
6.724
-85.4
.006
88.1
.169
70.3
18000
.167
172.8
6.869
-101.2
.005
80.9
.130
57.7
18100
.199
170.0
6.968
-116.9
.005
70.1
.096
38.8
18200
.225
168.0
7.01
-132.6
.005
62.9
.074
6.7
18300
.253
165.3
7.025
-148.1
.005
54.9
.076
-32.7
18400
.273
162.1
7.02
-163.4
.005
48.4
.101
-60.3
18500
.291
159.8
6.987
-178.6
.005
40.3
.132
-76.7
18600
.305
156.8
6.948
166.4
.005
35.5
.165
-87.9
18700
.317
154.4
6.881
151.8
.004
26.3
.196
-96.0
18800
.324
151.9
6.819
137.0
.004
20.6
.223
-102.8
18900
.329
149.2
6.757
122.5
.004
12.1
.248
-108.5
19000
.332
146.9
6.686
108.2
.004
5.6
.269
-113.7
19100
.329
144.0
6.652
94.0
.004
-0.1
.287
-118.3
19200
.325
141.4
6.63
79.8
.004
-9.6
.301
-122.6
19300
.317
138.5
6.593
65.6
.004
-17.9
.310
-126.8
19400
.309
135.4
6.585
51.6
.004
-24.2
.317
-131.0
19500
.296
131.7
6.586
37.4
.004
-31.5
.319
-135.1
19600
.282
128.2
6.594
23.1
.004
-38.0
.318
-139.4
19700
.265
125.3
6.57
9.0
.004
-45.7
.314
-143.7
19800
.249
119.0
6.597
-5.1
.004
-55.2
.307
-148.3
19900
.227
113.6
6.644
-19.4
.004
-62.5
.296
-153.0
20000
.208
107.2
6.665
-34.2
.004
-71.7
.284
-158.1
20100
.187
99.0
6.661
-48.6
.004
-81.1
.269
-163.5
20200
.167
90.1
6.701
-63.1
.004
-87.5
.251
-169.6
20500
.129
49.5
6.716
-107.7
.004
-113.2
.190
166.8
21000
.174
-16.6
6.565
177.0
.003
-161.4
.131
98.1
21500
.228
-42.2
6.212
103.3
.002
139.3
.176
32.8
22000
.225
-50.6
6.081
29.9
.001
35.8
.223
-3.3
22500
.197
-41.6
6.088
-46.3
.001
-94.5
.225
-40.1
23000
.214
-25.9
5.956
-126.0
.001
-174.6
.210
-91.7
23500
.256
-27.2
5.559
152.1
.002
119.1
.242
-148.4
24000
.248
-49.3
5.103
66.9
.003
32.9
.279
170.8
Download S-Parameters, click here
FMM5811GJ-1
17.7-23.6GHz Power Amplifier MMIC
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
2001 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0101M200
1.3
0.15
(0.051)
0.9
(0.035)
3.5 Max.
(0.137)
6
0.15
(0.236)
12
0.15
(0.472)
1Min.
(0.039)
6-0.3
(0.012)
4-R 1.2
0.15
(0.047)
INDEX
15
(0.591)
11
0.15
(0.433)
7
(0.276)
3.8
(0.149)
Case Style "GJ"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. VDD
2. RFin
3. VGG
4. VGG
5. RFout
6. VDD
7. GND (Flange)
1
2
3
6
7
5
4
7
(0.276)
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
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