FMM5815X
17.5-20GHz Power Amplifier MMIC
Item
Symbol
Drain Voltage
VDD
10
V
Gate Voltage
VGG
-3.0
V
Input Power
Pin
22
dBm
C
Storage Temperature
-65 to +175
Tstg
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
C)
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
2. The forward and reverse gate currents should not exceed 4 and -0.39 mA respectively.
3. This product should be hermetically packaged
Operating Backside Temperature
-65 to +85
C
Top
1
Edition 1.0
June 2001
Item
Symbol
Output Return Loss
RLout
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25
C)
Power Gain at 1 dB G.C.P.
19
21
24
-
-8
-
dB
-
700
950
mA
Input Return Loss
RLin
Iddrf
-
-
-12
dB
dB
3rd Order Intermodulation
Distortion
IM3
-
-40
-37.0
dBc
Frequency Range
f
17.5 - 20.0
GHz
Output Power at 1 dB G.C.P.
29.5
31
-
dBm
P
1dB
G
1dB
G.C.P.: Gain Compression Point
S.C.L.: Single Carrier Level
Power-Added Efficiency
Drain Current
-
30
-
%
add
VDD = 6V
IDD
=
600mA (Typ.)
ZS = ZL = 50
f=10MHz, 2-Tone Test,
Pout=20dBm S.C.L.
Note 2: Electrical Characteristic is specified on RF-probe measurements
Note 1: RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
DESCRIPTION
The FMM5815X is a high-gain, high linearity, 3-stage MMIC
amplifier designed for operation in the17.5-20.0 GHz
frequency range. This amplifier has an input and output
designed for use in 50
systems.This device is well suited
for point-to-point communication applications.
FEATURES
High Output Power: P1dB = 31dBm (Typ.)
High Gain: G1dB = 21dB (Typ.)
High PAE:
add = 30% (Typ.)
Impedance Matched Zin/Zout = 50
0.25m PHEMT Technology
FMM5815X
17.5-20GHz Power Amplifier MMIC
2
IM3 vs. OUTPUT POWER
21
17
19
23
25
27
29
-55
-60
-50
-45
-40
-35
-30
-25
-20
Total Output Power (dBm)
IM3 (dBc)
VDD = 6V
IDD(DC) = 600mA
P1dB & G1dB vs. FREQUENCY
18.5
17.5
18.0
19.0
19.5
20.0
16
20
24
28
32
36
40
24
40
56
72
88
104
120
Frequency (GHz)
P1dB(dBm), G1dB(dB)
VDD = 6V
IDD(DC) = 600mA
P1dB
OUTPUT POWER vs. INPUT POWER
0
-4
4
8
12
15
19
23
27
31
35
0
20
40
Total Input Power (dBm)
Total Output Power (dBm)
add
(%)
add
(%)
VDD = 6V
IDD(DC) = 600mA
Pout
add
G1dB
add
17.5GHz
18.0GHz
20.0GHz
17.5GHz
18.0GHz
20.0GHz
FMM5815X
17.5-20GHz Power Amplifier MMIC
3
220pF
220pF
220pF
220pF
VDD
RFout
0.15F
VGG
0.15F
RFin
VDD
0.15F
Chip Size: 3.57mm x 2.76mm
ASSEMBLY DRAWING
S-PARAMETERS
VDD = 6V, IDS = 600mA
FREQUENCY
S11
S21
S12
S22
(MHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
16500
.357
47.0
10.785
-44.4
.004
-51.8
.110
-20.6
17000
.385
19.3
12.059
-80.4
.005
-42.8
.111
-93.5
17500
.443
-10.5
13.360
-117.3
.005
-62.5
.169
-134.6
18000
.512
-39.3
14.483
-156.9
.007
-83.0
.205
-166.6
18500
.566
-66.7
14.782
161.9
.007
-95.1
.220
164.9
19000
.572
-92.9
14.585
120.3
.005
-112.5
.178
137.0
19500
.538
-117.9
13.693
78.7
.005
-142.9
.121
108.3
20000
.459
-144.7
13.188
37.1
.003
94.6
.051
53.6
20500
.346
165.1
12.600
-10.4
.005
33.8
.044
19.8
21000
.307
74.2
11.066
-65.4
.006
-10.5
.080
11.4
Download S-Parameters, click here
4
FMM5815X
17.5-20GHz Power Amplifier MMIC
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
2001 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0601M200
CHIP OUTLINE
0
3570
Chip Size: 3570m x 2760m
Chip Thickness: 70m
Pad Dimensions: 1. DC Pad: 80m x 80m
VDD: 100m x 100m
2. RF Pad: 120m x 80m
1194
2555
2640
2760
0
0
2760
RFin
RFout
0
VDD5
3075
3450
120
VDD4
120
205
280
620
VDD1
1155
2380
1380
2510
250
VDD2
3570
3075
750
VDD3
636
1155
750
VGG2
2380
VGG1
Unit:
m
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
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