MICROWAVE CORPORATION
8 - 142
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC406MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v02.1202
General Description
Features
Functional Diagram
The HMC406MS8G is a high effi ciency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifi er which operates between
5.0 and 6.0 GHz. The amplifi er is packaged in a
low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com-
ponents, the amplifi er provides 17 dB of gain and
+29 dBm of saturated power at 38% PAE from
a +5.0V supply voltage. Vpd can be used for full
power down or RF output power/current control.
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count
Electrical Specifi cations,
T
A
= +25 C, Vs = 5V, Vpd = 5V
Typical Applications
This amplifi er is ideal for use as a driver
amplifi er for 5.0 - 6.0 GHz applications:
UNII
HiperLAN & 802.11a WLAN
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
5.0 - 6.0
5.7 - 5.9
GHz
Gain
13
16
21
14
17
21
dB
Gain Variation Over Temperature
0.03
0.04
0.03
0.04
dB/ C
Input Return Loss
10
11
dB
Output Return Loss
8
9
dB
Output Power for 1 dB Compression (P1dB)
21
24
24
27
dBm
Saturated Output Power (Psat)
27
29
dBm
Output Third Order Intercept (IP3)
34
38
34
38
dBm
Noise Figure
6.0
6.0
dB
Supply Current (Icq)
Vpd = 0V/5V
0.002 / 300
0.002 / 300
mA
Control Current (Ipd)
Vpd = 5V
7
7
mA
Switching Speed
tON, tOFF
35
35
ns
MICROWAVE CORPORATION
8 - 143
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-25
-20
-15
-10
-5
0
5
10
15
20
3
4
5
6
7
8
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
4.5
5
5.5
6
6.5
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
4.5
5
5.5
6
6.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-15
-10
-5
0
4.5
5
5.5
6
6.5
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC406MS8G
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v02.1202
Broadband Gain & Return Loss
Gain vs. Temperature
14
16
18
20
22
24
26
28
30
32
34
4.5
5
5.5
6
6.5
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
32
34
4.5
5
5.5
6
6.5
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
MICROWAVE CORPORATION
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
0
6
12
18
24
30
36
42
0
2
4
6
8
10
12
14
16
18
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
4.5
5
5.5
6
6.5
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
Power Compression @ 5.8 GHz
Output IP3 vs. Temperature
HMC406MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v02.1202
0
1
2
3
4
5
6
7
8
9
10
4.5
5
5.5
6
6.5
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage
14
15
16
17
18
19
20
21
22
23
24
22
23
24
25
26
27
28
29
30
31
32
4.75
5
5.25
Gain
P1dB
Psat
GAIN dB)
P1dB, Psat (dBm)
Vcc SUPPLY VOLTAGE (Vdc)
-60
-50
-40
-30
-20
-10
0
4.5
5
5.5
6
6.5
Reverse Isolation
Power Down Isolation
ISOLATION (dB)
FREQUENCY (GHz)
3
6
9
12
15
18
21
24
27
30
33
0
35
70
105
140
175
210
245
280
315
350
2.5
3
3.5
4
4.5
5
Gain
P1dB
Psat
Icq
GAIN (dB), P1dB (dBm), Psat (dBm)
Icq (mA)
Vpd (Vdc)
Reverse Isolation vs. Temperature
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
MICROWAVE CORPORATION
8 - 145
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC406MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v02.1202
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.5 Vdc
Control Voltage (Vpd)
+5.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc)
+20 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 32 mW/C above 85 C)
2.1 W
Thermal Resistance
(junction to ground paddle)
31 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
MICROWAVE CORPORATION
8 - 146
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC406MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
v02.1202
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
Vpd
Power Control Pin. For maximum power, this pin should be
connected to 5.0V. A higher voltage is not recommended. For
lower idle current, this voltage can be reduced.
2, 4, 7
GND
Ground: Backside of package has exposed metal ground
slug that must be connected to ground thru a short path. Vias
under the device are required.
3
RF IN
This pin is AC coupled and matched to 50 Ohms from 5.5 to
6.0 GHz.
5, 6
RF OUT
RF output and bias for the output stage. The power supply for
the output device needs to be supplied to these pins.
8
Vcc
Power supply voltage for the fi rst amplifi er stage. An external
bypass capacitor of 330 pF is required. This capacitor should
be placed as close to the devices as possible.
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