n
North America: Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 2.0
Features
Low Series Resistance
Low Capacitance
High Cut-off Frequency
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Automated Pick and Place Insertion
Rugged by Design
Surface Mountable
Description
M/A-COM's MA4FCP200 series is a silicon flip chip PIN diode
fabricated with M/A-COM's patented HMIC
TM
process. This
diode is fabricated on epitaxial wafers using a process designed
for repeatable electrical characteristics and extremely low
parasitics. This diode is fully passivated with Silicon Nitride
and has an additional layer of Polyimide for scratch protection.
These protective coatings prevent damage to the junction during
automated or manual handling. This flip chip configuration is
suitable for pick and place insertion.
Case Style
ODS-1264
1, 2, 3
1. Dimensions are in inches, () are in mm.
2.
Unless otherwise noted, tolerance are inches
+ .001" (millimeters + .025 mm).
3.
Schematic is for junction side up.
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
MAX.
A
0.0082
0.0092
0.209
0.233
B
0.0141
0.0151
0.359
0.383
C
0.0035 Typ.
D
.00038
0.0048
0.097
0.121
E
0.0085
0.0095
0.217
0.240
F
0.0023
0.0033
0.059
0.083
G
0.0048
0.0058
0.123
0.147
0.090 Typ.
MA4FCP200
Silicon Flip Chip
PIN Diode
G
C
B
E
A
D
Electrical Specifications @ +25C
Symbol
Parameter
Test Conditions
Units
Min.
Typ.
Max.
C
T
Total Capacitance
-10 Volts, 1 MHz
1
pF
0.020
0.030
C
T
Total Capacitance
-10 Volts, 1 GHz
1, 3
pF
0.015
R
S
Series Resistance
50 mA, 100 MHz
2, 3
2.4
R
S
Series Resistance
50 mA, 1 GHz
2, 3
2.8
V
F
Forward Voltage
100 mA
V
1.25
1.50
V
R
Reverse Voltage
10
A
V
-70
-100
I
R
Reverse Current
-70 V
A
10
R
JL
Thermal Resistance
C/W
< 860
T
L
Lifetime
10 mA / 6 mA
ns
100
1. Total capacitance is equivalent to the sum of junction capacitance C
j
and parasitic capacitance.
2. Series resistance R
S
is equivalent to the total diode series resistance including the junction resistance R
j
.
3. R
S
and C
P
measures on an HP4291A with die mounted in an ODS-186 package with conductive silver epoxy.
4. Steady-state R
JL
measured with die mounted in an ODS-186 package with conductive silver epoxy.
1
n
North America: Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 2.0
Handling Procedures
The following precautions should be observed to avoid
damaging these devices.
Cleanliness
These devices should be handled in a clean environment. Do
not attempt to clean die after installation.
ESD
These devices very susceptible to ESD and are rated Class 0
(0-199V) per HBM MIL-STD-883, method 3015.7 [C = 100pF
10%, R = 1.5k
1%]. Even though tested die pass 100V
ESD, they must be handled in a static-free environment.
General Handling
The protective polymer coating on the active areas of these
devices provides scratch protection, particularly for the metal
airbridge that contacts the anode. Die can be handled with
tweezers or vacuum pickups and are suitable for use with
automatic pick-and-place equipment.
Silicon Flip Chip PIN Diode
MA4FCP200
Mounting Techniques
These devices were designed for insertion onto hard or soft
substrates with the junction side down. They can be mounted
with conductive epoxy or with a low temperature solder
preform. The die can also be assembled with the junction side
up, and wire or ribbon bonds made to the pads.
Solder Die Attach
Solder that does not scavenge gold, such as Indalloy #2, is
recommended. Sn-Pb based solders are not recommended due
to solder embrittlement. Do not expose die to a temperature
greater than 235
C, or greater than 200
C for longer than 10
seconds. No more than three seconds of scrubbing should be
required for attachment.
Epoxy Die Attach
Assembly can be preheated to 125 to 150
C. Use a minimum
amount of silver epoxy. Cure epoxy as per manufacturer's
schedule. For extended cure times, temperatures should be kept
below 200
C.
0
1
2
3
4
5
0
200
400
600
800
1000
FREQUENCY (MHz)
Rs (ohms)
10mA
50mA
100mA
Typical Performance Curves @ +25C
1
Typical Total Resistance R
S
vs. Forward
Current and Frequency
0.000
0.005
0.010
0.015
0.020
0.025
0
200
400
600
800
1000
FREQUENCY (MHz)
Ct (pF)
-10V
0V
Typical Total Capacitance C
P
vs. Reverse
Voltage and Frequency
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Forward Current
2
125 mA
Reverse Voltage
-70 V
Operating Temperature
-55C to +150C
Storage Temperature
-55C to +150C
Dissipated Power
2
145 mW
Mounting Temperature
+235C for 10 seconds
1. Exceeding these limits may cause permanent damage.
2. Steady-state R
JL
measured with die mounted in an ODS-186
package with conductive silver epoxy..
1. R
S
and C
P
measures on an HP4291A with die mounted in an ODS-186 package with conductive silver epoxy.
2
Applications
These devices are well suited as series diodes in broadband
multi-throw switches through 26 GHz. In addition, the excep-
tional RC product makes them useful as shunt switches at milli-
meter frequencies. The low parasitic values of L and C make
additional circuit tuning unnecessary.
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