TH8080
SoloLIN Transceiver
TH8080
Datasheet
Page
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3901008080
January 2003
Rev 003
Features
Features
Features
Features
Operating voltage V
S
= 6 to 18 V
Low current consumption of typ. 24A
LIN-Bus Transceiver:
o
Slew rate control for good EMC behavior
o
Fully integrated receiver filter
o
BUS input voltage -27V to 40V
o
Integrated termination resistor for LIN slave nodes (30k
)
o
Baud rate up to 20 kBaud
o
Compatible to LIN Specification 1.3
Compatible to ISO9141 functions
High EMI immunity
Bus terminals proof against short-circuits and transients in the automotive environment
Thermal overload protection
High signal symmetry for using in RC based slave nodes up to 2% clock tolerance
4kV ESD protection at Bus pin
Ordering Information
Part
No.
Temperature
Range
Package
TH8080
K (-40 to 125 C)
DC (SOIC8)
General Description
General Description
General Description
General Description
The TH8080 is a physical layer device for a single wire data link capable of operating in applications where
high data rate is not required and a lower data rate can achieve cost reductions in both the physical media
components and in the microprocessor which use the network. The TH8080 is designed in accordance to the
physical layer definition of the LIN Protocol Specification, Rev. 1.3.The IC furthermore can be used in
ISO9141 systems.
Because of the very low current consumption of the TH8080 in recessive state it's suitable for ECU
applications with hard standby current requirements, whereby no sleep/wake up control from the
microprocessor is necessary.
.
TH8080
SoloLIN Transceiver
TH8080
Datasheet
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Rev 003
Contents
1. Functional Diagram ................................................................................................... 4
2. Electrical Specification.............................................................................................. 5
2.1
Operating Conditions ............................................................................................ 5
2.2
Absolute Maximum Ratings .................................................................................. 5
2.3
Static Characteristics ............................................................................................ 6
2.4
Dynamic Characteristics ....................................................................................... 7
2.5
Timing Diagrams................................................................................................... 8
2.6
Test Circuits for Dynamic and Static Characteristics ............................................ 9
3. Functional Description ............................................................................................ 10
3.1
Initialization ......................................................................................................... 10
3.2
Operating Modes ................................................................................................ 10
3.3
LIN BUS Transceiver .......................................................................................... 10
4. Operating under Disturbance ................................................................................. 12
4.1
Loss of battery .................................................................................................... 12
4.2
Loss of Ground ................................................................................................... 12
4.3
Short circuit to battery......................................................................................... 12
4.4
Short circuit to ground......................................................................................... 12
4.5
Thermal overload................................................................................................ 12
4.6
Undervoltage Vcc ............................................................................................... 12
5. Application Hints ..................................................................................................... 13
5.1
LIN System Parameter........................................................................................ 13
5.1.1.
Bus loading requirements ............................................................................ 13
5.1.2.
Recommendations for system design.......................................................... 13
5.2
Min/max slope time calculation ........................................................................... 15
5.3
Application Circuitry ............................................................................................ 16
6. Pin Description......................................................................................................... 17
7. Mechanical Specification SOIC8............................................................................. 18
8. ESD/EMC Remarks .................................................................................................. 19
8.1
General Remarks................................................................................................ 19
8.2
ESD-Test ............................................................................................................ 19
8.3
EMC.................................................................................................................... 19
9. Reliability Information ............................................................................................. 20
10.
Disclaimer ............................................................................................................. 20
TH8080
SoloLIN Transceiver
TH8080
Datasheet
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January 2003
Rev 003
List of Figures
List of Figures
List of Figures
List of Figures
Figure 1 - Block Diagram ......................................................................................................................... 4
Figure 2 - Input / Output timing ................................................................................................................ 8
Figure 3 Receiver debouncing .............................................................................................................. 8
Figure 5 - Test circuit for dynamic characteristics ................................................................................... 9
Figure 6 - Test circuit for automotive transients....................................................................................... 9
Figure 7 - Receive impulse diagram ...................................................................................................... 11
Figure 8 - Slope time calculation............................................................................................................ 15
Figure 9 - Application Circuitry............................................................................................................... 16
Figure 10 - Pin description SOIC8 package .......................................................................................... 17
TH8080
SoloLIN Transceiver
TH8080
Datasheet
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Rev 003
1.
1.
1.
1. Functiona
Functiona
Functiona
Functional Diagram
l Diagram
l Diagram
l Diagram
SLEW RATE
BUS Driver
Biasing&
Bandgap
VS
internal Supply
&
References
Receive
Comparator
Input
Filter
TH8080
Thermal
Protection
BUS
GND
POR
TxD
RxD
VCC
30K
Figure 1 - Block Diagram
TH8080
SoloLIN Transceiver
TH8080
Datasheet
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2.
2.
2.
2. Electrical Specification
Electrical Specification
Electrical Specification
Electrical Specification
All voltages are referenced to ground (GND). Positive currents flow into the IC.
The absolute maximum ratings (in accordance with IEC 134) given in the table below are limiting values that
do not lead to a permanent damage of the device but exceeding any of these limits may do so. Long term
exposure to limiting values may effect the reliability of the device.
2.1 Operating
Conditions
Parameter
Symbol
Min
Max
Unit
Battery supply voltage
[1]
V
S
6 18
V
Supply voltage
V
CC
4.5 5.5
V
Operating ambient temperature
T
amb
-40
+125
C
[1]
Vs is the IC supply voltage including voltage drop of reverse battery protection diode, V
DROP
= 0.4 to 1V,
V
BAT_ECU
voltage range is 7 to 18V
2.2 Absolute Maximum Ratings
Parameter
Symbol
Condition
Min
Max
Unit
t < 1 min
30
Battery Supply Voltage
V
S
Load dump, t < 500ms
-0.3
40
V
Supply Voltage
V
CC
-0.3 +7 V
Transient supply voltage
V
S.tr1
ISO 7637/1 pulse 1
[1]
-150
V
Transient supply voltage
V
S..tr2
ISO 7637/1 pulses 2
[1]
100
V
Transient supply voltage
V
S..tr3
ISO 7637/1 pulses 3A, 3B
-150
150
V
t < 500ms , Vs = 18V
-27
BUS voltage
V
BUS
t < 500ms ,Vs = 0V
-40
40 V
Transient bus voltage
V
BUS..tr1
ISO 7637/1 pulse 1
[2]
-150
V
Transient bus voltage
V
BUS.tr2
ISO 7637/1 pulses 2
[2]
100
V
Transient bus voltage
V
BUS.tr3
ISO 7637/1 pulses 3A, 3B
[2]
-150 150 V
DC voltage on pins TxD, RxD
V
DC
-0.3 7 V
ESD capability of any pin
ESD
HB
Human body model,
equivalent to discharge
100pF with 1.5k
,
-4 4
kV
Maximum latch - up free current at any Pin
I
LATCH
-500 500 mA
Maximum power dissipation
P
tot
At
T
amb
= 125 C
197
mW
Thermal impedance
JA
in free air
152
K/W
Storage temperature
T
stg
-55 +150 C
Junction temperature
T
vj
-40 +150 C
[1]
ISO 7637 test pulses are applied to VS via a reverse polarity diode and >2uF blocking capacitor .
[2]
ISO 7637 test pulses are applied to BUS via a coupling capacitance of 1 nF.
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SoloLIN Transceiver
TH8080
Datasheet
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2.3 Static
Characteristics
Unless otherwise specified all values in the following tables are valid for V
S
= 6 to 18V, V
CC
= 4.5 to 5.5V and
T
AMB
= -40 to 125C. All voltages are referenced to ground (GND), positive currents are flow into the IC.
Parameter
Symbol
Condition
Min
Typ
Max
Unit
PIN VS, VCC
V
CC
undervoltage lockout
V
CC_UV
EN=H,
TxD=L
2.75
4.3 V
Supply current, dominant
I
Sd
V
S
= 18V,V
CC
= 5.5V, TxD = L
3
mA
Supply current, dominant
I
CCd
V
S
= 18V,V
CC
= 5.5V, TxD = L
1
mA
Supply current, recessive
I
Sr
V
S
= 18V,V
CC
= 5.5V,TxD=open
10
20
A
Supply current, recessive
I
CCr
V
S
= 18V,V
CC
= 5.5V,TxD=open
18
30
A
Supply current, recessive
I
Sr +
I
CCr
V
S
= 12V,V
CC
= 5V, TxD=open,
T
amb
= 25
24
A
PIN BUS Transmitter
Short circuit bus current
I
BUS_LIM
V
BUS
= V
S
, driver on
120
200
mA
Pull up current bus
I
BUS_PU
V
BUS
= 0, V
S
= 12V, driver off
-1
mA
Bus reverse current, recessive
I
BUS_PAS_rec
V
BUS
> V
S ,
8V < V
BUS
< 18V
8V < V
S
< 18V, driver off
20
A
Bus reverse current loss of battery
I
BUS
V
S
= 0V, 0V < V
BUS
< 18V
100
A
Bus current during loss of Ground
I
BUS_NO_GND
V
S
= 12V, 0 < V
BUS
< 18V
-1
1
mA
Transmitter dominant voltage
V
BUSdom_DRV_1
Load = 40mA
1.2
V
Transmitter dominant voltage
V
BUSdom_DRV_2
V
S
= 6V, load = 1000
0.6 V
Transmitter dominant voltage
V
BUSdom_DRV_3
V
S
= 18V, load = 1000
0.8 V
PIN BUS Receiver
Receiver dominant voltage
V
BUSdom
0.4
*V
S
V
Receiver recessive voltage
V
BUSrec
0.6
*V
S
V
Center point of receiver threshold
V
BUS_CNT
V
BUS_CNT
= (V
BUSdom
+ V
BUSrec
)/2 0.487 *V
S
0.5
*V
S
0.512
*V
S
V
Receiver hysteresis
V
HYS
V
BUS_CNTt
= ( V
BUSrec
-V
BUSdom
)
0.175
*V
S
0.187 *V
S
V
PIN TXD
High level input voltage
V
ih
Rising
edge
0.7*V
CC
V
Low level input voltage
V
il
Falling
edge
0.3*V
CC
V
TxD pull up current, high level
I
IH_TXD
V
TxD
= 4V
-125
-50
-25
A
TxD pull up current, low level
I
IL_TXD
V
TxD
= 1V
-500
-250
-100
A
PIN RXD
Low level output voltage
V
ol_rxd
I
RxD
= 2mA
0.9
V
Leakage Current
V
leak_rxd
V
RxD
= 5.5V, recessive
-1
1
A
TH8080
SoloLIN Transceiver
TH8080
Datasheet
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Rev 003
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Thermal Protection
Thermal shutdown
T
sd [1]
155
180
C
Thermal recovery
T
hys [1]
130
150
C
[1]
No production test, guaranteed by design and qualification
2.4 Dynamic
Characteristics
Unless otherwise specified all values in the following table are valid for V
S
= 6 to 18V and T
AMB
= -40 to 125
o
C
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Propagation delay transmitter
[1] [3]
t
trans_pd
Bus loads: 1K
/1nF,
660
/6.8nF, 500/10nF
5
s
Propagation delay transmitter symmetry
[3]
t
trans_sym
Calculate t
trans_pdf
- t
trans_pdr
-2 2
s
Propagation delay receiver
[1] [3]
t
rec_pdf
C
RxD
= 25pF
6
s
Propagation delay receiver symmetry
[3]
t
rec_sym
Calculate t
trans_pdf
- t
trans_pdr
-1.5 1.5
s
Slew rate falling edge
[2]
t
SRF
Bus load 1K
/1nF
-3
-2 -1
V/s
Slew rate rising edge
[2]
t
SRR
Bus load 1K
/1nF
1 2 3
V/s
Slope time, transition from recessive to
dominant, low battery
[4]
t
sdom
_
LB
V
S
= 6V ,
Bus loads: 1K
/1nF,
660
/6.8nF, 500/10nF
5.4
s
Slope time, transition from dominant to
recessive, low battery
[4]
t
srec_LB
V
S
= 6V,
Bus load 500
/10nF
7.2
s
Slope Symmetry, low battery
T
ssym_LB
Calculate t
sdom
- t
srec
-7 +1
s
Slope time, transition from recessive to
dominant, high battery
[4]
t
sdom_HB
V
S
= 18V,
Bus loads: 1K
/1nF,
660
/6.8nF, 500/10nF
17.2
s
Slope time, transition from dominant to
recessive , high battery
[4]
t
srec
_
HB
V
S
= 18V ,
Bus loads: 1K
/1nF,
660
/6.8nF, 500/10nF
17.2
s
Slope Symmetry, high battery
t
ssym
_
HB
Calculate t
sdom
t
srec
-5 +5
s
Receiver debounce time
[5] [1]
t
rec_deb
BUS rising & falling edge
1.5
4
s
[1]
Propagation delays are not relevant for LIN protocol transmission, value only information parameter
[2]
No production test, guaranteed by design and qualification
[3]
See Figure 2 - Input / Output timing
[4]
See Figure 7 - Slope time calculation
[5]
See Figure 3 Receiver debouncing
TH8080
SoloLIN Transceiver
TH8080
Datasheet
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January 2003
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2.5 Timing
Diagrams
TxD
BUS
t
trans_f
RxD
V
BUS
95%
50%
t
trans_r
5%
50%
t
rec_f
t
rec_r
100%
0%
50%
50%
Figure 2 - Input / Output timing
V
RxD
V
BUS
40%
60%
t
REC_PDR
50%
t
t
t
REC_PDF
t < t
rec_deb
t < t
rec_deb
Figure 3 Receiver debouncing
TH8080
SoloLIN Transceiver
TH8080
Datasheet
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2.6 Test Circuits for Dynamic and Static Characteristics
VSUP
BUS
GND
VCC
RxD
TxD
TH8080
R
L
100n
C
L
100n
20p
2.7K
Figure 4 - Test circuit for dynamic characteristics
Figure 5 - Test circuit for automotive transients
TH8080
SoloLIN Transceiver
TH8080
Datasheet
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Rev 003
3.
3.
3.
3. Functional Description
Functional Description
Functional Description
Functional Description
3.1 Initialization
After
power on,
the chip enters automatically the recessive state. If the voltage regulator provides the V
CC
supply voltage, normal communication is possible.
3.2 Operating
Modes
All operation modes will be handled from the TH8080 automatically
Normal Mode
After power on, the IC switches automatically to normal mode. Bus communication is possible.
If there is no communication on the bus line the power consumption of the IC is very low and therefore it is
no standby management from the MCU necessary.
Thermal Shutdown Mode
If the junction temperature T
J
is higher than 155C, the TH8080 will be switched into the thermal shutdown
mode (bus driver will be switched off).
If T
J
falls below the thermal shutdown temperature (typ. 140C) the TH8080 will be switched to the normal
mode.
3.3 LIN BUS Transceiver
The transceiver consists a bus-driver (1.2V@40mA) with slew rate control, current limitation and as well in
the receiver a high voltage comparator followed by a debouncing unit.
BUS Input/Output
The recessive BUS level is generated from the integrated 30k pull up resistor in serial with a diode This
diode prevent the reverse current of V
BUS
during differential voltage between VS and BUS (V
BUS
>V
S
).
No additional termination resistor is necessary to use the TH8080 in LIN slave nodes. If this IC is used for
LIN master nodes it is necessary that the BUS pin is terminated via a external 1k
resistor in serial with a
diode to VBAT.
TxD Input
During transmission the data at the pin TxD
will be transferred to the BUS driver for generating a BUS signal.
To minimize the electromagnetic emission of the bus line, the BUS driver is equipped with an integrated slew
rate control and wave shaping unit.
Transmitting will be interrupted if thermal shutdown is active.
The CMOS compatible input TxD controls directly the BUS level:
TxD = low
->
BUS = low (dominant level)
TxD = high
->
BUS = high (recessive level)
The TxD pin has an internal pull up resistor connected to VCC. This secures that an open TxD pin generates
a recessive BUS level.
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SoloLIN Transceiver
TH8080
Datasheet
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RxD Output
The data signals from the BUS pin will be transferred continuously to the pin RxD. Short spikes on the bus
signal are suppressed by the implemented debouncing circuit.
BUS
RxD
t < t
rec_deb
t < t
rec_deb
VS
50%
60%
40%
V
hHYS
V
BUS_CNT_max
V
BUS_CNT_min
Figure 6 - Receive impulse diagram
The receive threshold values V
BUS_CNT_max
and V
BUS_CNT_min
are symmetrical to the centre voltage of 0.5*V
S
with a hysteresis of typ. 0.175*V
S
. Including all tolerances the LIN specific receive threshold values of 0.4*V
S
and 0.6*V
S
will be secure observed.
The received BUS signal will be output to the RxD pin:
BUS
<
V
BUS_CNT
0.5 * V
HYS
->
RxD = low (BUS dominant)
BUS
>
V
BUS_CNT
+ 0.5 * V
HYS
->
RxD = high, floating (BUS recessive)
This pin is a buffered open drain output with a typical load of:
Resistance: 2.7 kOhm
Capacitance: < 25 pF
Datarate
The TH8080 is a
constant slew rate
transceiver that means the bus driver operates with a fixed slew rate
range of 1.0 V/s
V/
T 3V/s. This principle secures a very good symmetry of the slope times between
recessive to dominant and dominant to recessive slopes within the LIN bus load range (C
BUS
, R
term
).
The TH8080 guarantees data rates up to 20kbit within the complete bus load range under worst case
conditions. The constant slew rate principle is very robust against voltage drops and can operate with RC-
oscillator systems with a clock tolerance up to 2% between 2 nodes.
TH8080
SoloLIN Transceiver
TH8080
Datasheet
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4.
4.
4.
4. Operating under Disturbance
Operating under Disturbance
Operating under Disturbance
Operating under Disturbance
4.1 Loss of battery
If the ECU is disconnected from the battery, the bus pin is in high impedance state. There is no impact to the
bus traffic and to the ECU itself.
4.2 Loss of Ground
In case of an interrupted ECU ground connection there is no influence to the bus line.
4.3 Short circuit to battery
The transmitter output current is limited to the specified value in case of short circuit to battery in order to
protect the TH8080 itself against high current densities .
4.4 Short circuit to ground
If the bus line is shorted to negative shifted ground levels, there is no current flow from the ECU ground to
the bus and no distortion of the bus traffic occurs.
4.5 Thermal
overload
The TH8080 is protected against thermal overloads. If the chip temperature exceeds the specified value, the
transmitter is switched off until thermal recovery. The receiver is still working while thermal shutdown.
4.6 Undervoltage
Vcc
If the ECU regulated supply voltage is missing or decreases under the specified value, the transmitter is
switched off to prevent undefined bus traffic.
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SoloLIN Transceiver
TH8080
Datasheet
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5.
5.
5.
5. Application Hints
Application Hints
Application Hints
Application Hints
5.1 LIN System Parameter
5.1.1. Bus loading requirements
Parameter
Symbol
Min
Typ
Max
Unit
Operating voltage range
V
BAT
8
18
V
Voltage drop of reverse protection diode
V
Drop_rev
0.4 0.7 1 V
Voltage drop at the serial diode in pull up path
V
SerDiode
0.4 0.7 1 V
Battery shift voltage
V
Shift_BAT
0
0.1 V
BAT
Ground shift voltage
V
Shift_GND
0
0.1 V
BAT
Master termination resistor
R
master
900 1000
1100
Slave termination resistor
R
slave
20 30 60 k
Number of system nodes
N
2
16
Total length of bus line
LEN
BUS
40 m
Line capacitance
C
LINE
100
150
pF/m
Capacitance of master node
C
Master
220 pF
Capacitance of slave node
C
Slave
220
250
pF
Total capacitance of the bus including slave and master
capacitance
C
BUS
0.47 4 10 nF
Network Total Resistance
R
Network
500 862
Time constant of overall system
1 5
s
Table 1 - Bus loading requirements
5.1.2. Recommendations for system design
The goal of the LIN physical layer standard is to be universal valid definition of the LIN system for plug &play
solutions in LIN networks up to 20kbd bus speed.
In case of small and medium LIN networks no problems occurring. It's recommended to adjust the total
network capacitance to at least 4nF for good EMC and EMI behavior. This can be done by adapting only the
master node capacitance. The slave node capacitance should have a unit load of typically 220pF for good
EMC/EMI behavior.
In large networks with long bus lines and the maximum number of nodes some system parameters can
exceed the defined limits and an intervention of the LIN system designer is required.
The whole capacitance of a slave node is not only the unit load capacitor itself. Additionally there is a
capacitance of wires and connectors and the internal capacitance of the LIN transmitter. This internal
capacitance is strongly dependent from the technology of the IC manufacturer and should be in the range of
30 to 150pF. If the bus lines have a total length of nearly 40m, the total bus capacitance can exceed 10nF.
A second reason for exceeding these limits is the tolerance of the integrated slave termination resistor. If
most of the slave nodes have a slave termination resistance near by the allowed maximum of 60k
, the total
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SoloLIN Transceiver
TH8080
Datasheet
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network resistance is more than 700
. Even if the total network capacitance is below or equal to the
maximum specified value of 10nF, the network time constant is higher than 7
s!
This problem can be removed only by adapting the master termination resistor to realize the required
maximum network time constant of 5
s.
The LIN output driver of the TH8080 provides a higher driving capability than necessary within the LIN
standard (40mA @ 1.2V). With this driver stage the system designer have more degrees of freedom in case
of maximum LIN networks with a total network capacitance of more than 10nF. The total network resistance
can be decreased to:
R
tl_min
= (V
Bat_max
V
BUSdom
) / I
BUS_max
= (18V 1.2V) / 40mA = 420
Note:
The adaptation of the network time constant is necessary in large networks (Master resistance)and also in
small networks (master capacitance).
The intervention in the LIN network has only to be done in the master ECU! The limits of the system have to
be known by the system designer and shouldn't have any influence to the LIN physical layer.
The TH8080 meets the requirements for implementation in RC-based slave nodes (oscillator tolerance <2%
at baudrate 20Kbit/s )under all worst case conditions in V
BAT
- or ground shift, operating voltage and load
conditions, and independent from the method of reverse polarity protection .
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SoloLIN Transceiver
TH8080
Datasheet
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5.2 Min/max slope time calculation
d
V
BUS
60%
40%
t
sdom
60%
100%
0%
t
srec
V
dom
40%
Figure 7 - Slope time calculation
The slew rate of the bus voltage is measured between 40% and 60% of the output voltage swing (linear
region). The output voltage swing is the difference between dominant and recessive bus voltage.
dV/dt = 0.2*V
swing
/ (t
40%
- t
60%
)
The slope time is the extension of the slew rate tangent until the upper and lower voltage swing limits:
t
slope
= 5 * (t
40%
- t
60%
)
The slope time of the recessive to dominant edge is directly determined by the slew rate control of the
transmitter:
t
slope
= V
swing
/ dV/dt
The dominant to recessive edge is influenced from the network time constant and the slew rate control,
because it's a passive edge. In case of low battery voltages and high bus loads the rising edge is only
determined by the network. If the rising edge slew rate exceeds the value of the dominant one, the slew rate
control determines the rising edge.
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SoloLIN Transceiver
TH8080
Datasheet
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5.3 Application
Circuitry
Figure 8 - Application Circuitry
TH8080
SoloLIN Transceiver
TH8080
Datasheet
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6.
6.
6.
6. Pin Description
Pin Description
Pin Description
Pin Description
TH8080
1
2
3
4
8
7
6
5
RxD
GND
TxD
N.C.
N.C.
VS
BUS
VCC
Figure 9 - Pin description SOIC8 package
Pin
Name
IO-Typ
Description
1
RXD
O
Receive data from BUS to core, LOW in dominant state
2 N.C.
3
VCC
P
5V supply input
4
TXD
I
Transmit data from core to BUS, LOW in dominant state
5 GND G
Ground
6
BUS
I/O
LIN bus pin, LOW in dominant state
7
VS
P
Battery input voltage
8 N.C.
TH8080
SoloLIN Transceiver
TH8080
Datasheet
Page
18
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3901008080
January 2003
Rev 003
7.
7.
7.
7. Mechanical Spec
Mechanical Spec
Mechanical Spec
Mechanical Specification
ification
ification
ification SOIC8
SOIC8
SOIC8
SOIC8
Small Outline Integrated Circiut (SOIC), SOIC 8, 150 mil
A1
B
C
D
E
e
H
h
L
A
ZD
A2
All Dimension in mm, coplanarity < 0.1 mm
min
max
0.10
0.25
0.36
0.46
0.19
0.25
4.80
4.98
3.81
3.99
1.27
5.80
6.20
0.25
0.50
0.41
1.27
1.52
1.72
0
8
0.53
1.37
1.57
All Dimension in inch, coplanarity < 0.004"
min
max
0.004
0.0098
0.014
0.018
0.0075
0.0098
0.189
0.196
0.150
0.157
0.050 0.2284
0.244
0.0099
0.0198
0.016
0.050
0.060
0.068
0
8
0.021 0.054
0.062
TH8080
SoloLIN Transceiver
TH8080
Datasheet
Page
19
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3901008080
January 2003
Rev 003
8.
8.
8.
8. ESD/EMC Remarks
ESD/EMC Remarks
ESD/EMC Remarks
ESD/EMC Remarks
8.1 General
Remarks
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
8.2 ESD-Test
The TH8080 is tested according MIL883D (human body model).
8.3 EMC
The test on EMC impacts is done according to ISO 7637-1 for power supply pins and ISO 7637-3 for data-
and signal pins.
Power Supply pin VS:
Testpulse
Condition
Duration
1 t
1
= 5 s / U
S
= -100 V /
t
D
= 2 ms
5000 pulses
2 t
1
= 0.5 s / U
S
= 100 V / t
D
= 0.05 ms
5000 pulses
3a/b
U
S
= -150 V/ U
S
= 100 V
burst 100ns / 10 ms / 90 ms break
1h
5
R
i
= 0.5
, t
D
= 400 ms
t
r
= 0.1 ms / U
P
+U
S
= 40 V
10 pulses every 1min
Data- and signal pins BUS:
Testpulse
Condition
Duration
1 t
1
= 5 s / U
S
= -100 V /
t
D
= 2 ms
1000 pulses
2 t
1
= 0.5 s / U
S
= 100 V / t
D
= 0.05 ms
1000 pulses
3a/b
U
S
= -150 V/ U
S
= 100 V
burst 100ns / 10 ms / 90 ms break
1000 burst
TH8080
SoloLIN Transceiver
TH8080
Datasheet
Page
20
of
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3901008080
January 2003
Rev 003
9.
9.
9.
9. Reliability Information
Reliability Information
Reliability Information
Reliability Information
Melexis devices are classified and qualified regarding suitability for infrared, vapor phase and wave soldering
with usual (63/37 SnPb-) solder (melting point at 183degC).
The following test methods are applied:
-
IPC/JEDEC J-STD-020A (issue April 1999)
Moisture/Reflow Sensitivity Classification For Nonhermetic Solid State Surface Mount Devices
-
CECC00802 (issue 1994)
Standard Method For The Specification of Surface Mounting Components (SMDs) of Assessed
Quality
-
MIL 883 Method 2003 / JEDEC-STD-22 Test Method B102
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak
temperature, temperature gradient, temperature profile etc) additional classification and qualification tests
have to be agreed upon with Melexis.
The application of Wave Soldering for SMD's is allowed only after consulting Melexis regarding assurance of
adhesive strength between device and board.
For more information on manufacturability/solderability see quality page at our website:
http://www.melexis.com/
10.
10.
10.
10. Disclaimer
Disclaimer
Disclaimer
Disclaimer
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its
Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the
information set forth herein or regarding the freedom of the described devices from patent infringement.
Melexis reserves the right to change specifications and prices at any time and without notice. Therefore,
prior to designing this product into a system, it is necessary to check with Melexis for current information.
This product is intended for use in normal commercial applications. Applications requiring extended
temperature range, unusual environmental requirements, or high reliability applications, such as military,
medical life-support or life-sustaining equipment are specifically not recommended without additional
processing by Melexis for each application.
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be
liable to recipient or any third party for any damages, including but not limited to personal injury, property
damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential
damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical
data herein. No obligation or liability to recipient or any third party shall arise or flow out of Melexis' rendering
of technical or other services.
2002 Melexis NV. All rights reserved.
TH8080
SoloLIN Transceiver
TH8080
Datasheet
Page
21
of
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3901008080
January 2003
Rev 003
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