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MBC13900
Ordering Information
Device
Marking
Package
MBC13900T1
900
SOT-343
Package Information
Plastic Package
Case 318M
(SOT-343)
(Scale 2:1)
Definitive Data: Motorola reserves the right to change the Production detail specifications as may be required to
permit improvements in the design of its product. Motorola, Inc., 2002. All rights reserved.
The MBC13900 is a high performance transistor fabricated using Motorola's 15 GHz f
bipolar IC process. It is housed in the 4-lead SC-70 (SOT-343) surface mount plastic package
resulting in a parasitic effect reduction and RF performance enhancements. The high
performance at low power makes the MBC13900 suitable for front-end applications in
portable wireless systems such as pagers, cellular and cordless phones.
Low Noise Figure, NF
min
= 0.8 dB (Typ) @ 0.9 GHz, 2.0 V and 5.0 mA
Maximum Stable Gain, 22 dB @ 0.9 GHz, 2.0 V and 5.0 mA
Output Third Order Intercept, OIP3 = 18 dBm (Typ) @ 2.0 V and
5.0 mA
Ultra small SOT-343 Surface Mount Package
Available Only in Tape and Reel Packaging
Figure 1. Pin Connections
4
1
3
2
Base
Emitter
Collector
Emitter
Technical Data
MBC13900/D
Rev. 0, 06/2002
NPN Silicon
Low Noise Transistor
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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2
MBC13900 Technical Data
MOTOROLA
Electrical Specifications
1 Electrical Specifications
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
6.5
Vdc
Collector-Base Voltage
V
CBO
8.0
Vdc
Emitter-Base Voltage
V
EBO
3.0
Vdc
Power Dissipation @ T
C
= 75 C
Derate Linearity above T
C
= 75 C at
P
D(max)
0.188
2.5
W
mW/ C
Collector Current-Continuous
I
C
20
mA
Maximum Junction Temperature
T
J(max)
150
C
Storage Temperature
T
stg
-55 to 150
C
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Electrical Characteristics
or Recommended Operating Conditions tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM)
400 V and
Machine Model (MM)
50 V. Additional ESD data available upon request.
Table 2. Thermal Characteristic
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
R
JC
400
C/W
NOTES: To calculate the junction termpature use T
J
= (P
D
x R
JC
) + T
C
. The case temperature measured on collector lead adjacent to the
package body.
Table 3. Electrical Characteristics
Characteristic Symbol
Min
Typ
Max
Unit
OFF Characteristic [Note 1]
Collector-Emitter Breakdown Voltage
(I
C
= 0.1 mA, I
B
= 0)
V
(BR)CEO
6.5
7.5
-
Vdc
Collector-Base Breakdown Voltage (I
C
= 0.1 mA, I
E
= 0)
V
(BR)CBO
8.0
12
-
Vdc
Emitter-Base Breakdown Voltage (I
E
= 0.1 mA, I
C
= 0)
V
(BR)EBO
3.0
4.0
-
Vdc
Collector Cutoff Current (V
CB
= 7.0 V, I
E
= 0)
I
CBO
-
-
0.1
A
Emitter Cutoff Current (V
EB
= 2.0 V, I
C
= 0)
I
EBO
-
-
0.1
A
Base Cutoff Current (V
CE
= 5.0 V, I
B
= 0)
I
CEO
-
-
0.1
A
ON Characteristic [Note 1]
DC Current Gain (V
CE
= 2.0 V, I
C
= 5.0 mA)
h
FE
100
-
200
-
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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Electrical Specifications
MOTOROLA
MBC13900 Technical Data
3
Dynamic Characteristics
Current Gain Bandwidth Product (V
CE
= 2.0 V, I
C
= 15
mA, f = 0.9 GHz)
f
-
15
-
GHz
Performance Characteristic
Insertion Gain
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 0.9 GHz
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 1.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 0.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.9 GHz
|S
21
|
2
18.5
13.5
16.5
12.5
19.5
14.5
17.5
13.5
-
-
-
-
dB
Maximum Stable Gain and/or Maximum Available Gain
[Note 2]
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 0.9 GHz
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 1.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 0.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.9 GHz
MSG, MAG
22
18
21
17.5
23
19
22
18.5
-
-
-
-
dB
Minimum Noise Figure
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 0.9 GHz
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 1.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 0.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.9 GHz
NF
min
-
-
-
-
0.8
0.9
0.8
0.9
0.9
1.1
0.9
1.1
dB
Associated Gain at Minimum Noise Figure
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 0.9 GHz
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 1.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 0.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.9 GHz
G
NF
-
-
-
-
22
16
21
15
-
-
-
-
dB
Output Third Order Intercept [Note 3]
(V
CE
= 2.0 V, I
C
= 5.0 mA, f = 0.9 GHz)
(V
CE
= 2.0 V, I
C
= 5.0 mA, f = 1.9 GHz)
(V
CE
= 3.0 V, I
C
= 3.0 mA, f = 0.9 GHz)
(V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.9 GHz)
OIP3
-
-
-
-
18
21
13.5
19
-
-
-
-
dBm
NOTES: 1. Pulse width
300 s, duty cycle
2% pulsed.
2. Maximum Available Gain and Maximum Stable Gain
are defined by the K factor as follows:
, if K > 1,
, if K < 1
3. Z
in
and Z
out
matched for optimum IP3.
Table 3. Electrical Characteristics (Continued)
Characteristic Symbol
Min
Typ
Max
Unit
MAG
S21
S12
---------- K
K
2
1
=
MSG
S21
S12
----------
=
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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4
MBC13900 Technical Data
MOTOROLA
Typical Performance Characteristics
2 Typical Performance Characteristics
Figure 2. Capacitance versus Voltage
Figure 3. h
FE
, DC Current Gain versus Collector Current
Figure 4. Gain-Bandwidth Product versus Collector Current
V
CB
, REVERSE VOLTAGE (V)
4.0
3.5
2.5
1.5
1.0
0
0.35
0.2
0.15
0
0.05
0.3
C,
CA
PA
C
I
T
A
NC
E (
p
F)
C
ob
C
cb
f = 1.0 MHz
0.5
2.0
3.0
0.1
0.25
162
2.0 V
3.0 V
160
158
156
154
152
150
148
h
FE
,
D
C
CU
RR
E
NT
G
A
I
N
I
C
, COLLECTOR CURRENT (mA)
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
20
2.0
16
0
2.0 V
I
C
, COLLECTOR CURRENT (mA)
3.0 V
14
12
10
8.0
6.0
4.0
2.0
4.0
6.0
8.0
10
12
14
16
18
f = 900 MHz
f
,
G
A
I
N
BA
ND
WI
D
T
H PR
OD
UC
T
(
G
Hz
)
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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Typical Performance Characteristics
MOTOROLA
MBC13900 Technical Data
5
Figure 5. Gain-Bandwidth Product versus Collector Current
Figure 6. Maximum Stable/Available gain and Forward Insertion Gain versus Frequency
Figure 7. Maximum Stable/Available gain and Forward Insertion Gain versus Frequency
2.0
16
0
3.0 V
f = 1.9 GHz
I
C
, COLLECTOR CURRENT (mA)
2.0 V
14
12
10
8.0
6.0
4.0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
f
,
G
A
I
N
BA
ND
WI
D
T
H
PR
OD
UC
T
(G
Hz
)
5.5
5.0
35
0
|S
21
|
2
MSG
V
CE
= 2.0 V
I
C
= 5.0 mA
f, FREQUENCY (GHz)
MAG
30
25
20
15
10
0.5
1.0 1.5
2.0
2.5
3.0
3.5
4.0 4.5
5.0
M
S
G
,
M
A
X
I
M
U
M
S
T
A
B
L
E
G
A
I
N
;
M
A
G
,
M
A
X
I
M
U
M
A
V
A
I
L
A
B
L
E
G
A
I
N
;
|
S
2
1
|
2
,
F
O
R
W
A
R
D
I
N
S
E
R
T
I
O
N
G
A
I
N
(
d
B
)
5.0
35
0
f, FREQUENCY (GHz)
30
25
20
15
10
0.5
1.0
1.5
2.0
2.5 3.0 3.5
4.0
4.5
5.0
5.5
M
S
G
,
M
A
X
I
M
U
M
S
T
A
B
L
E
G
A
I
N
;
M
A
G
,
M
A
X
I
M
U
M
A
V
A
I
L
A
B
L
E
G
A
I
N
;
|
S
2
1
|
2
,
F
O
R
W
A
R
D
I
N
S
E
R
T
I
O
N
G
A
I
N
(
d
B
)
V
CE
= 3.0 V
I
C
= 3.0 mA
MAG
|S
21
|
2
MSG
F
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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