DATA SHEET
The information in this document is subject to change without notice.
Document No. P11435EJ5V0DS00 (5th edition)
Date Published September 1998 NS CP(K)
Printed in Japan
PHOTOCOUPLER
PS2533-1,-2,-4,PS2533L-1,-2,-4
HIGH COLLECTOR TO EMITTER VOLTATGE
HIGH ISOLATION VOLTAGE
MULTI PHOTOCOUPLER SIRIES
1990
-
NEPOC
TM
Series
-
The mark
shows major revised points.
DESCRIPTION
The PS2533-1, -2, -4 and PS2533L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon darlington connected phototransistor.
The PS2533-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2533L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.
FEATURES
High collector to emitter voltage (V
CEO
= 350 V)
High Isolation voltage BV = 5 000 Vr.m.s.: standard products
BV = 3 750 Vr.m.s.: VDE0884 approved products (Option)
High current transfer ratio (CTR = 4 000 % TYP.)
High-speed switching (t
r,
t
f
= 100
s TYP.)
Ordering number of taping product: PS2533L-1-E3, E4, F3, F4, PS2533L-2-E3, E4
UL approved: File No. E72422 (S)
BSI approved: No. 8221/8222
NEMKO approved: No. 98101708
SEMKO approved: No. 9824187/01-02
DEMKO approved: No. 307863
FIMKO approved: No. F1 11397
VDE0884 approved (Option)
APPLICATIONS
Telephone, Exchange equipment
FAX/MODEM
2
PS2533-1,-2,-4,PS2533L-1,-2,-4
PACKAGE DIMENSIONS (in millimeters)
DIP type
PS2533-2
PS2533-1
20.3 MAX.
6.5
3.8 MAX.
4.55 MAX.
2.8 MIN.
0.65
2.54
1.250.15
0.500.10
0.25
M
0 to 15
7.62
PS2533-4
5.1 MAX.
6.5
3.8 MAX.
4.55 MAX.
2.8 MIN.
0.65
2.54
1.250.15
0.500.10
0.25
M
0 to 15
7.62
0 to 15
7.62
10.2 MAX.
6.5
3.8 MAX.
4.55 MAX.
2.8 MIN.
0.65
2.54
1.250.15
0.500.10
0.25
M
PS2533-1 (NEW PACKAGE)
4.60.35
6.5
3.8 MAX.
4.55 MAX.
2.8 MIN.
0.65
2.54
1.250.15
0.500.10
0.25
M
0 to 15
7.62
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
4
3
TOP VIEW
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
1
2
3
4
8
7
6
5
TOP VIEW
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
4
3
3
PS2533-1,-2,-4,PS2533L-1,-2,-4
Lead bending type
PS2533L-2
PS2533L-1
PS2533L-4
3.8 MAX.
2.54
1.250.15
0.25
M
3.8 MAX.
2.54
1.250.15
0.25
M
3.8 MAX.
2.54
1.250.15
0.25
M
20.3 MAX.
6.5
10.2 MAX.
6.5
5.1 MAX.
6.5
PS2533L-1 (NEW PACKAGE)
4.60.35
6.5
3.8 MAX.
2.54
1.250.15
0.25
M
0.05 to 0.2
0.90.25
9.600.4
7.62
7.62
0.90.25
9.600.4
0.05 to 0.2
7.62
0.90.25
9.600.4
0.05 to 0.2
7.62
0.90.25
9.600.4
0.05 to 0.2
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
4
3
TOP VIEW
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
1
2
3
4
8
7
6
5
TOP VIEW
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9, 11, 13, 15. Emitter
10, 12, 14, 16. Collector
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
4
3
4
PS2533-1,-2,-4,PS2533L-1,-2,-4
Lead bending type for long distance
PS2533L1-1
PS2533L2-1
5.1 MAX.
6.5
7.62
0 to 15
10.16
3.8 MAX.
4.25 MAX.
2.8 MIN.
0.35
2.54
1.250.15
0.500.10
0.25
M
5.1 MAX.
6.5
PS2533L2
PS2533L1
4.60.35
6.5
1.00.2
3.8 MAX.
4.25 MAX.
3.2 MIN.
0.35
1.250.15
2.54
0.500.10
0.25
M
3.8 MAX.
2.54
0.25
M
1.250.15
0.90.25
7.62
12.0 MAX.
0.250.2
10.16
0.90.25
7.62
12.0 MAX.
0.250.2
10.16
3.8 MAX.
0.25
M
1.250.15
2.54
7.62
0 to 15
10.16
4.60.35
6.5
1.00.2
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
4
3
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
4
3
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
4
3
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
4
3
5
PS2533-1,-2,-4,PS2533L-1,-2,-4
ORDERING INFORMATION
Part Number
Package
Safety Standard Approval
Application Part Number
*1
PS2533-1
PS2533L-1
PS2533L1-1
PS2533L2-1
4-pin DIP
4-pin DIP (lead bending surface mount)
4-pin DIP (for long distance)
4-pin DIP (for long distance surface mount)
Standard products
(UL, BSI, NEMKO, SEMKO,
DEMKO, FIMKO approved)
PS2533-1
PS2533-2
PS2533L-2
8-pin DIP
8-pin DIP (lead bending surface mount)
PS2533-2
PS2533-4
PS2533L-4
16-pin DIP
16-pin DIP (lead bending surface mount)
PS2533-4
PS2533-1-V
PS2533L-1-V
PS2533L1-1-V
PS2533L2-1-V
4-pin DIP
4-pin DIP (lead bending surface mount)
4-pin DIP (for long distance)
4-pin DIP (for long distance surface mount)
VDE0884 approved products
(Option)
PS2533-1
PS2533-2-V
PS2533L-2-V
8-pin DIP
8-pin DIP (lead bending surface mount)
PS2533-2
PS2533-4-V
PS2533L-4-V
16-pin DIP
16-pin DIP (lead bending surface mount)
PS2533-4
*1 As applying to Safety Standard, following part number should be used.
6
PS2533-1,-2,-4,PS2533L-1,-2,-4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C, unless otherwise specified)
Ratings
Parameter
Symbol
PS2533-1,
PS2533L-1
PS2533-2, -4,
PS2533L-2, -4
Unit
Diode
Forward Current (DC)
I
F
80
mA
Reverse Voltage
V
R
6
V
Power Dissipation Derating
P
D
/
C
1.5
1.2
mW
C
Power Dissipation
P
D
150
120
mW/ch
Peak Forward Current
*1
I
FP
1
A
Transistor
Collector to Emitter Voltage
V
CEO
350
V
Emitter to Collector Voltage
V
ECO
0.6
V
Collector Current
I
C
150
mA/ch
Power Dissipation Derating
P
C
/
C
3.0
2.4
mW/
C
Power Dissipation
P
C
300
240
mW/ch
Isolation Voltage
*2
BV
5 000
3 750
*3
Vr.m.s.
Operating Ambient Temperature
T
A
-
55 to +100
C
Storage Temperature
T
stg
-
55 to +150
C
*1 PW = 100
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at T
A
= 25
C, RH = 60 % between input and output
*3 VDE0884 approved products (Option)
7
PS2533-1,-2,-4,PS2533L-1,-2,-4
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Diode
Forward Voltage
V
F
I
F
= 10 mA
1.15
1.40
V
Reverse Current
I
R
V
R
= 5 V
5
A
Terminal Capacitance
C
t
V = 0 V, f = 1.0 MHz
30
pF
Transistor
Collector to Emitter
Dark Current
I
CEO
V
CE
= 350 V, I
F
= 0 mA
400
nA
Coupled
Current Transfer Ratio
(I
C
/I
F
)
CTR
I
F
= 1 mA, V
CE
= 2 V
1 500
4 000
6 500
%
Collector Saturation
Voltage
V
CE (sat)
I
F
= 1 mA, I
C
= 2 mA
1.0
V
Isolation Resistance
R
I-O
V
I-O
= 1.0 kV
DC
10
11
Isolation Capacitance
C
I-O
V = 0 V, f = 1.0 MHz
0.6
pF
Rise Time
*1
t
r
V
CC
= 5 V, I
C
= 10 mA, R
L
= 100
100
s
Fall Time
*1
t
f
100
*1 Test circuit for switching time
(PW = 1 ms,
Duty cycle = 1/10)
Pulse input
V
CC
V
OUT
R
L
= 100
50
I
F
8
PS2533-1,-2,-4,PS2533L-1,-2,-4
TYPICAL CHARACTERISTICS (T
A
= 25
C, unless otherwise specified)
PS2533-1
PS2533L-1
1.5 mW/C
PS2533-2, -4
PS2533L-2, -4
1.2 mW/C
150
100
50
0
25
50
75
100
125
150
Ambient Temperature T
A
(C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PS2533-1
PS2533L-1
3.0 mW/C
PS2533-2, -4
PS2533L-2, -4
2.4 mW/C
400
300
200
100
0
25
50
75
100
125
150
Ambient Temperature T
A
(C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
+25 C
0 C
25 C
55 C
T
A
= +100 C
+75 C
+50 C
100
10
1
0.1
0.01
0.6
0.8
1.0
1.2
1.4
1.6
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
I
F
= 0.5 mA
1.0 mA
1.5 mA
2.0 mA
2.5 mA
3.0 mA
3.5 mA
4.0 mA
5.0 mA
4.5 mA
160
140
120
100
80
60
40
20
0
2
1
3
4
5
6
8
7
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
= 350 V
50
25
0
25
50
75
100
100 n
10 n
1 n
100 p
10
1
Ambient Temperature T
A
(C)
Collector to Emitter Dark Current I
CEO
(A)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
I
F
= 5.0 mA
2.0 mA
1.0 mA
0.5 mA
500
100
10
50
1
5
0.1
0.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
9
PS2533-1,-2,-4,PS2533L-1,-2,-4
LONG TERM CTR DEGRADATION
Time (Hr)
CTR (Relative Value)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
10
2
10
3
10
4
10
5
10
6
I
F
= 1 mA,
T
A
= 25 C
I
F
= 1 mA,
T
A
= 60 C
FREQUENCY RESPONSE
Frequency f (kHz)
Normalized Gain Gv
5
0
10
5
15
20
25
30
0.01
0.1
1
10
100
R
L
= 1 k
100
10
V
CE
= 4 V, V
in
= 0.1 V
p-p
R
L
V
in
V
out
1 k
47
1
F
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,,
Normalized to 1.0
at T
A
= 25 C,
I
F
= 1 mA, V
CE
= 2 V
1.2
0.8
0.4
0.0
1.0
0.6
0.2
50
25
25
50
75
100
0
Ambient Temperature T
A
(C)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
V
CE
= 2 V
Sample A
Sample B
5 000
4 000
3 000
1 000
0
2 000
1
5
10
0.1
0.5
15
Forward Current I
F
(mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
V
CC
= 10 V,
I
C
= 10 mA
t
r
t
d
t
s
t
f
500
100
50
10
1
5
20
100
200
500
1 k
2 k
50
Load Resistance R
L
(
)
Switching Time t ( s)
SWITCHING TIME vs.
LOAD RESISTANCE
Remark The graphs indicate nominal characteristics.
10
PS2533-1,-2,-4,PS2533L-1,-2,-4
TAPING SPECIFICATIONS (in millimeters)
Tape Direction
PS2533L-1-E3, F3
PS2533L-1-E4, F4
Outline and Dimensions (Tape)
1.550.1
2.00.1
4.00.1
1.550.1
1.750.1
4.30.2
10.30.1
0.3
7.50.1
16.00.3
5.60.1
8.00.1
Outline and Dimensions (Reel)
Packing: PS2533L-1-E3, E4 1 000 pcs/reel
PS2533L-1-F3, F4 2 000 pcs/reel
2.00.5
R 1.0
13.00.5
21.00.8
16.4
+2.0
0.0
80.05.0
PS2533L-1-E3, E4: 250
PS2533L-1-F3, F4: 330
11
PS2533-1,-2,-4,PS2533L-1,-2,-4
Tape Direction
PS2533L-2-E3
PS2533L-2-E4
Outline and Dimensions (Tape)
1.550.1
2.00.1
4.00.1
1.550.1
1.750.1
4.30.2
10.30.1
0.3
7.50.1
16.00.3
10.40.1
12.00.1
Outline and Dimensions (Reel)
Packing: 1 000 pcs/reel
16.4
+2.0
0.0
80.05.0
330
2.00.5
R 1.0
13.00.5
21.00.8
12
PS2533-1,-2,-4,PS2533L-1,-2,-4
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
Peak reflow temperature
235
C (package surface temperature)
Time of temperature higher than 210
C
30 seconds or less
Number of reflows
Three
Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
60 to 90 s
(preheating)
210 C
120 to 160 C
Package Surface Temperature T (C)
Time (s)
(heating)
to 10 s
to 30 s
235 C (peak temperature)
Recommended Temperature Profile of Infrared Reflow
Peak temperature 235 C or below
(2) Dip soldering
Temperature
260 C or below (molten solder temperature)
Time
10 seconds or less
Number of times
One
Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
(3) Cautions
Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
13
PS2533-1,-2,-4,PS2533L-1,-2,-4
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter
Symbol
Speck
Unit
Application classification (DIN VDE 0109)
for rated line voltages
300 Vr.m.s.
for rated line voltages
600 Vr.m.s.
IV
III
Climatic test class (DIN IEC 68 Teil 1/09.80)
55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
U
pr
= 1.2
U
IORM
, P
d
<
5 pC
U
IORM
U
pr
890
1 068
V
peak
V
peak
Test voltage (partial discharge test, procedure b for random test)
U
pr
= 1.6
U
IORM
, P
d
<
5 pC
U
pr
1 424
V
peak
Highest permissible overvoltage
U
TR
6 000
V
peak
Degree of pollution (DIN VDE 0109)
2
Clearance distance
>
7.0
mm
Creepage distance
>
7.0
mm
Comparative tracking index (DIN IEC 112/VDE 0303 part 1)
CTI
175
Material group (DIN VDE 0109)
III a
Storage temperature range
T
stg
-
55 to +150
C
Operating temperature range
T
A
55 to +100
C
Isolation resistance, minimum value
V
IO
= 500 V dc at T
A
= 25
C
V
IO
= 500 V dc at T
A
MAX. at least 100
C
Ris MIN.
Ris MIN.
10
12
10
11
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current I
F
, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
V
IO
= 500 V dc at T
A
= 175
C (Tsi)
Tsi
Isi
Psi
Ris MIN.
175
400
700
10
9
C
mA
mW
14
PS2533-1,-2,-4,PS2533L-1,-2,-4
APPLICATION FOR TELEPHONE (EXAMPLE)
LINE
Bell Ringing Signal
(75 Vr.m.s., 16 Hz)
PS2505-1, PS2506-1
PS2605, PS2606
PS2607, PS2608
etc.
Bell Ringing Detect
V
CC
V
CC
Line Observe
Dial Pulse PS2532
Generator PS2533
PS2521
PS2525
Dialer Circuit
IN
OUT
CPU
Photo MOS FET
Speech Circuit
15
PS2533-1,-2,-4,PS2533L-1,-2,-4
[MEMO]
PS2533-1,-2,-4,PS2533L-1,-2,-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
PDF 
ZIP