DATA SHEET
The information in this document is subject to change without notice.
1988
Document No. P11308EJ6V0DS00 (6th edition)
Date Published December 1998 NS CP(K)
Printed in Japan
PHOTOCOUPLER
PS2703-1,PS2703-2,PS2703-4
HIGH ISOLATION VOLTAGE
HIGH COLLECTOR TO EMITTER VOLTAGE TYPE
SOP MULTI PHOTOCOUPLER
The mark
shows major revised points.
-
NEPOC
TM
Series
-
DESCRIPTION
The PS2703-1, PS2703-2, PS2703-4 are optically coupled isolators containing a GaAs light emitting diode and an
NPN silicon phototransistor.
Each is mounted in a plastic SOP (Small Outline Package) for high density applications.
This package has shield effect to cut off ambient light.
FEATURES
High isolation voltage (BV = 3 750 Vr.m.s.)
High collector to emitter voltage (V
CEO
= 120 V)
SOP (Small Outline Package) type
Each isolated channel per package
High-speed switching (t
r
, t
f
= 10
s TYP.)
Taping product number (Only-1 type): PS2703-1-E3, E4, F3, F4
UL approved: File No. E72422 (S)
VDE0884 approved (Option)
APPLICATIONS
Hibrid IC
Telephone/FAX
FA/OA equipment
Programmable logic controllers
Power supply
ORDERING INFORMATION
Part Number
Package
Safety Standard Approval
PS2703-1
4-pin SOP
Standard specification products
PS2703-2
8-pin SOP
UL approved
PS2703-4
16-pin SOP
PS2703-1-V
4-pin SOP
VDE0884 specification products (Option)
PS2703-2-V
8-pin SOP
PS2703-4-V
16-pin SOP
Data Sheet P11308EJ6V0DS00
2
PS2703-1,PS2703-2,PS2703-4
PACKAGE DIMENSIONS (in millimeters)
PS2703-1
4.5 MAX.
7.00.3
4.4
1.3
0.50.3
0.15
+0.10 0.05
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
4
3
1
2
2.0
0.10.1
2.3 MAX.
2.54
1.2 MAX.
0.4
+0.10
0.05
0.25 M
PS2703-2
9.3 MAX.
2.0
0.10.1
2.3 MAX.
2.54
1.2 MAX.
0.4
+0.10
0.05
0.25 M
TOP VIEW
1
2
3
4
8
7
6
5
1. 3. Anode
2. 4. Cathode
5. 7. Emitter
6. 8. Collector
7.00.3
4.4
1.3
0.50.3
0.15
+0.10 0.05
PS2703-4
19.46 MAX.
TOP VIEW
1. 3. 5. 7. Anode
2. 4. 6. 8. Cathode
9. 11. 13. 15. Emitter
10. 12. 14. 16. Collector
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
2.0
0.10.1
2.3 MAX.
2.54
1.2 MAX.
0.4
+0.10
0.05
0.25 M
7.00.3
4.4
1.3
0.50.3
0.15
+0.10 0.05
Data Sheet P11308EJ6V0DS00
3
PS2703-1,PS2703-2,PS2703-4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C, unless otherwise specified)
Ratings
Parameter
Symbol
PS2703-1
PS2703-2,
PS2703-4
Unit
Diode
Forward Current (DC)
I
F
50
mA
Reverse Voltage
V
R
6
V
Power Dissipation Derating
P
D
/
C
0.8
mW/
C
Power Dissipation
P
D
80
mW/ch
Peak Forward Current
*1
I
FP
1
A
Transistor
Collector to Emitter Voltage
V
CEO
120
V
Emitter to Collector Voltage
V
ECO
6
V
Collector Current
I
C
30
mA/ch
Power Dissipation Derating
P
C
/
C
1.5
1.2
mW/
C
Power Dissipation
P
C
150
120
mW/ch
Isolation Voltage
*2
BV
3 750
Vr.m.s.
Operating Ambient Temperature
T
A
55 to +100
C
Storage Temperature
T
stg
55 to +150
C
*1 PW = 100
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at T
A
= 25 C, RH = 60 % between input and output
Data Sheet P11308EJ6V0DS00
4
PS2703-1,PS2703-2,PS2703-4
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Diode
Forward Voltage
V
F
I
F
= 5 mA
1.1
1.4
V
Reverse Current
I
R
V
R
= 5 V
5
A
Terminal Capacitance
C
t
V = 0 V, f = 1 MHz
30
pF
Transistor
Collector to Emitter
Current
I
CEO
I
F
= 0 mA, V
CE
= 120 V
100
nA
Coupled
Current Transfer Ratio
CTR
I
F
= 5 mA, V
CE
= 5 V
50
150
400
%
(I
C
/I
F
)
*1
I
F
= 1 mA, V
CE
= 5 V
10
80
Collector Saturation
Voltage
V
CE (sat)
I
F
= 10 mA, I
C
= 2 mA
0.3
V
Isolation Resistance
R
I-O
V
I-O
= 1 kV
DC
10
11
Isolation Capacitance
C
I-O
V = 0 V, f = 1 MHz
0.4
pF
Rise Time
*2
t
r
V
CC
= 5 V, I
C
= 2 mA, R
L
= 1 k
10
s
Fall Time
*2
t
f
10
*1 CTR rank (only PS2703-1)
CTR rank
CTR (%)
Conditions
K
200 to 400
I
F
= 5 mA, V
CE
= 5 V
80 to
I
F
= 1 mA, V
CE
= 5 V
L
100 to 300
I
F
= 5 mA, V
CE
= 5 V
25 to
I
F
= 1 mA, V
CE
= 5 V
M
50 to 150
I
F
= 5 mA, V
CE
= 5 V
10 to
I
F
= 1 mA, V
CE
= 5 V
*2 Test circuit for switching time
PW = 100 s
Duty Cycle = 1/10
Pulse Input
V
CC
V
OUT
R
L
= 1 k
50
I
F
In monitor
Data Sheet P11308EJ6V0DS00
5
PS2703-1,PS2703-2,PS2703-4
TYPICAL CHARACTERISTICS (T
A
= 25 C, unless otherwise specified)
100
50
25
0
75
25
50
75
100
Ambient Temperature T
A
(C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
150
100
50
0
25
50
75
100
Ambient Temperature T
A
(C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PS2703-1
1.5 mW/C
PS2703-2,
PS2703-4
1.2 mW/C
10
0.1
0.5
5
1
0.2
0.6
1.0
0.0
0.4
0.8
Collector Saturation Voltage V
CE (sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
I
F
= 25 mA
1.5 mA
1 mA
0.5 mA
10 mA
5 mA
2.5 mA
2 mA
10
4
0
8
6
2
6
10
2
4
8
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
F
= 10 mA
4 mA
2 mA
3 mA
1 mA
5 mA
0.5 mA
100
0.1
1
0.01
10
0.6
1.0
1.4
1.6
0.8
1.2
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
+25 C
0 C
25 C
55 C
T
A
= +100 C
+75 C
+50 C
50 000
0.1
500
5 000
10
10 000
1 000
100
50
5
1
0.5
60
0
40
80
40
20
20
60
100
Ambient Temperature T
A
(C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
V
CE
= 40 V
24 V
10 V
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