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Электронный компонент: CXG1176UR

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CXG1176UR
12 pin UQFN (Plastic)
High Power DPDT Switch with Logic Control
Description
This IC can be used in wireless communication
systems, for example, W-CDMA handsets.
The IC has on-chip logic for operation with 2 CMOS
control inputs.
The Sony JPHEMT process is used for low insertion
loss and on-chip logic circuit.
Features
Low insertion loss
2 CMOS compatible control line
Small package size: 12-pin UQFN
Applications
Antenna switch for cellular handsets
Dual-Band W-CDMA
Structure
GaAs JPHEMT MMIC
Absolute Maximum Ratings (Ta = 25C)
Bias voltage
V
DD
7
V
Control voltage
Vctl
5
V
Operating temperature
Topr
35 to +85
C
Storage temperature
Tstg
65 to +150
C
GaAs MMICs are ESD sensitive devices. Special handling precautions are required.
E04910-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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CXG1176UR
Block Diagram and Recommended Circuit
When using this IC, the following external components should be used:
C
RF
: This capacitor is used for RF decoupling and must be used for all applications.
Cbypass: This capacitor is used for DC line filtering. 100pF is recommended.
Truth Table
ON State
RF4 RF3
RF4 RF2
RF1 RF3
RF1 RF2
F1
OFF
OFF
OFF
ON
F2
OFF
OFF
ON
OFF
F3
ON
OFF
ON
OFF
F4
OFF
ON
OFF
ON
Cbypass
(100pF)
F1
F4
F3
C
RF
C
RF
RF4
GND
GND
RF3
CTLB
CTLA
V
DD
GND
RF1
GND
GND
C
RF
RF2
C
RF
F5
F2
F6
10
9
8
7
1
2
3
11
12
6
5
4
F5
OFF
ON
OFF
OFF
F6
ON
OFF
OFF
OFF
CTLB
L
H
L
H
CTLA
L
L
H
H
State
1
2
3
4
3
CXG1176UR
DC Bias Conditions
(Ta = 25C)
Item
Vctl (H)
Vctl (L)
V
DD
Unit
V
V
V
Min.
2.0
0
2.5
Typ.
2.85
--
2.85
Max.
3.6
0.4
3.6
Electrical Characteristics
(Ta = 25C)
Item
Insertion loss
Isolation
VSWR
Switching speed
ACLR
Harmonics
Bias current
Control current
Unit
dB
dB
dB
dB
--
s
dBc
dBc
dBc
dBc
A
A
Typ.
0.25
0.35
25
20
1.2
5
60
65
75
75
80
15
Max.
0.45
0.55
1.5
10
50
55
60
60
150
25
Min.
20
15
Condition
830 to 885MHz
1920 to 2170MHz
830 to 885MHz
1920 to 2170MHz
50
1
1
1
1
V
DD
= 2.85V
Vctl (H) = 2.85V
Symbol
IL
ISO.
VSWR
TSW
ACLR1
ACLR2
2fo
3fo
I
DD
Ictl
State
5MHz
10MHz
1
Pin = 25dBm, 0/2.85V control, V
DD
= 2.85V, 830 to 840MHz, 1920 to 1980MHz
Measurement system noise level: ACLR (5MHz) < 60dBc, (10MHz) < 65dBc, 2nd Harmonics < 90dBc,
3rd Harmonics < 90dBc
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CXG1176UR
Sony Corporation
Package Outline Unit: mm
LEAD PLATING SPECIFICATIONS
ITEM
LEAD MATERIAL
COPPER ALLOY
SOLDER COMPOSITION
Sn-Bi Bi:1-4wt%
PLATING THICKNESS
5-18
m
SPEC.
PIN 1 INDEX
C
0.1
S A-B
0.4
0.05 M
S
C
C
A-B
S
0.05 S
MAX0.02
+ 0.09
12PIN UQFN (PLASTIC)
0.25 0.03
+ 0.09
0.14 0.03
x 4
2.0
4
1
3
9
7
6
12
10
2.0
S
0.4 0.1
0.6
0.55 0.05
4-R0.2
0.26
A
B
0.25
0.14
0.07
0.18
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
EPOXY RESIN
SOLDER PLATING
COPPER ALLOY
0.01g
PACKAGE STRUCTURE
UQFN-12P-01
PACKAGE MASS
TERMINAL SECTION
Note:Cutting burr of lead are 0.05mm MAX.
Solder Plating