Дискретные полупроводники · MOSFET транзисторы (одиночные)

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Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	2SK2749	Toshiba	MOSFET N-CH 900V 7A 2-16C1B Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Доп. информация Искать в поставщиках Купить в магазине
	2SK2749(F,T)	Toshiba	MOSFET N-CH 900V 7A 2-16C1B Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2776(TE24L)	Toshiba	MOSFET N-CH 500V 8A TO-220FL Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: TO-220FL	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2777(Q)	Toshiba	MOSFET N-CH 600V 6A TO-220 Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: 2-10S1B	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2777(SM,Q)	Toshiba	MOSFET N-CH 600V 6A TO-220 Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: 2-10S1B	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2777(TE24L)	Toshiba	MOSFET N-CH 600V 6A TO-220FL Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: TO-220FL	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2777(TE24L,Q)	Toshiba	MOSFET N-CH 600V 6A TO-220SM Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Surface Mount · Package / Case: 2-10S2B	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2782(TE16L1,Q)	Toshiba	MOSFET N-CH 60V 20A SC-64 Rds On (Max) @ Id, Vgs: 55 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 880pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Surface Mount	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2789(SM,Q)	Toshiba	MOSFET N-CH 100V 27A TO-220SM Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: 2-10S1B	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2789(TE24L)	Toshiba	MOSFET N-CH 100V 27A TO-220FL Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220FL		Доп. информация Искать в поставщиках Купить в магазине
	2SK2789(TE24L,Q)	Toshiba	MOSFET N-CH 100V 27A TO-220FL Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220FL	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2792	Rohm Semiconductor	MOSFET N-CH 600V 4A TO-220FN Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 600V · Current - Continuous Drain (Id) @ 25° C: 4A · Input Capacitance (Ciss) @ Vds: 610pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220FN-3 (Straight Leads)	от 0,00 до 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2793	Rohm Semiconductor	MOSFET N-CH 500V 5A TO-220FN Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 500V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220FN-3 (Straight Leads)	от 0,00 до 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2837	Toshiba	MOSFET N-CH 500V 20A 2-16C1B Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 3720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)		Доп. информация Искать в поставщиках Купить в магазине
	2SK2837(Q,T)	Toshiba	MOSFET N-CH 500V 20A 2-16C1B Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 3720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N)	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2838(SM,Q)	Toshiba	MOSFET N-CH 400V 5.5A TO-220SM Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10S1B	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2841	Toshiba	MOSFET N-CH 400V 10A TO-220AB Rds On (Max) @ Id, Vgs: 550 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1340pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: TO-220AB		Доп. информация Искать в поставщиках Купить в магазине
	2SK2841(F)	Toshiba	MOSFET N-CH 400V 10A TO-220AB Rds On (Max) @ Id, Vgs: 550 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1340pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: TO-220AB	от 0,00 до 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2845(TE16L1,Q)	Toshiba	MOSFET N-CH 900V 1A SC-64 Rds On (Max) @ Id, Vgs: 9 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Surface Mount	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2847	Toshiba	MOSFET N-CH 900V 8A 2-16F1B Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2040pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 85W · Mounting Type: Through Hole · Package / Case: 2-16F1B		Доп. информация Искать в поставщиках Купить в магазине
	2SK2847(F)	Toshiba	MOSFET N-CH 900V 8A 2-16F1B Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2040pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 85W · Mounting Type: Through Hole · Package / Case: 2-16F1B	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2865(TE16L1,NQ)	Toshiba	MOSFET N-CH 600V 2A SC-64 Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 380pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2866(F)	Toshiba	MOSFET N-CH 600V 10A TO-220AB Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 2040pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220AB	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2883(TE24L,Q)	Toshiba	MOSFET N-CH 800V 3A TO-220 Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 75W · Mounting Type: Surface Mount · Package / Case: 2-10S2B	от 0,00	Доп. информация Искать в поставщиках Купить в магазине
	2SK2884(Q)	Toshiba	MOSFET N-CH 800V 5A TO-220 Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1080pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: 2-10S1B	от 0,00	Доп. информация Искать в поставщиках Купить в магазине

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