2N7002 L6327 — MOSFET N-CH 60V 300MA SOT-23
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| IPD64CN10N G | Infineon Technologies | MOSFET N-CH 100V 17A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 64 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 569pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 44W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSO203SPT | Infineon Technologies | MOSFET P-CH 20V 9A 8-SOIC Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 21 mOhm @ 9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 50.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 2265pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.35W · Mounting Type: Surface Mount · Package / Case: 8-SOIC | Доп. информация Искать в поставщиках | ||
| IPB80N04S3-06 | Infineon Technologies | MOSFET N-CH 40V 80A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 47nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPB080N06N G | Infineon Technologies | MOSFET N-CH 60V 80A TO-263 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 93nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3500pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IPB070N06L G | Infineon Technologies | MOSFET N-CH 60V 80A TO-263 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 126nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4300pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 214W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IPI80N06S3-05 | Infineon Technologies | MOSFET N-CH 55V 80A TO-262 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 63A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 10760pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 165W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IPD06N03LB G | Infineon Technologies | MOSFET N-CH 30V 50A TO-252 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.1 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 22nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2800pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPB120N04S3-02 | Infineon Technologies | MOSFET N-CH 40V 120A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 14300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSZ050N03LSG | Infineon Technologies | MOSFET N-CH 30V 40A TSDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2800pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: 8-TSDSON | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPP06CNE8N G | Infineon Technologies | MOSFET N-CH 85V 100A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 85V · Gate Charge (Qg) @ Vgs: 138nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 9240pF @ 40V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Through Hole · Package / Case: TO-220 | Доп. информация Искать в поставщиках | ||
| IPI070N06N G | Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 118nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4100pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPB03N03LB | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 59nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7624pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IPB79CN10N G | Infineon Technologies | MOSFET N-CH 100V 13A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 79 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 716pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 31W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSL307SP L6327 | Infineon Technologies | MOSFET P-CH 30V 5.5A TSOP6 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 43 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 805pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPP040N06N3 G | Infineon Technologies | MOSFET N-CH 60V 90A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 98nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 11000pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 188W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSO200P03S | Infineon Technologies | MOSFET P-CH 30V 7.4A DSO-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 54nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.4A · Input Capacitance (Ciss) @ Vds: 2330pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.56W · Mounting Type: Surface Mount · Package / Case: DSO-8 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPD105N04L G | Infineon Technologies | MOSFET N-CH 40V 40A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 40A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 1900pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 42W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPD400N06N G | Infineon Technologies | MOSFET N-CH 60V 27A TO-252 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 40 mOhm @ 27A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 650pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPD048N06L3 G | Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 8400pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 115W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| SPI80N06S2L-05 | Infineon Technologies | MOSFET N-CH 55V 80A I2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 230nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7530pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
| IPP100N06S2-05 | Infineon Technologies | MOSFET N-CH 55V 100A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 5110pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| SPP80N06S2-H5 | Infineon Technologies | MOSFET N-CH 55V 80A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 155nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | Доп. информация Искать в поставщиках | ||
| SPD30N08S2-22 | Infineon Technologies | MOSFET N-CH 75V 30A DPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 21.5 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 57nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1950pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 136W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
 | BSC042N03LSG | Infineon Technologies | MOSFET N-CH 30V 93A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 93A · Input Capacitance (Ciss) @ Vds: 3500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 57W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IPB09N03LA | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 13nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1642pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 63W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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