2SJ655 — MOSFET P-CH 100V 12A TO-220ML
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| 6LN04SS-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 0.2A SSFP Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 100mA, 4V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 26pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150mW · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| CPH6311-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 20V 5A CPH6 Rds On (Max) @ Id, Vgs: 42 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1230pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ATP206-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 40V 40A ATPAK Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 1630pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ATP213-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 50A ATPAK Rds On (Max) @ Id, Vgs: 16 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3150pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| MCH5837-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH/DIODE SCHOTTKY MCPH5 Rds On (Max) @ Id, Vgs: 145 mOhm @ 1A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 1.8nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 115pF @ 10V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 800mW · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| MCH6429-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 20V 6A MCPH6 Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8.2nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 680pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| MCH6412-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 30V 5A MCPH6 Rds On (Max) @ Id, Vgs: 41 mOhm @ 3A, 4V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 790pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| CPH3348-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 12V 3A CPH3 Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 5.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 405pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ECH8304-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 12V 9.5A ECH8 Rds On (Max) @ Id, Vgs: 16 mOhm @ 4.5A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 33nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.5A · Input Capacitance (Ciss) @ Vds: 3180pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| 2SJ656 | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 100V 18A TO-220ML Rds On (Max) @ Id, Vgs: 75.5 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 74nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 4200pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| CPH6411-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 20V 6A CPH6 Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 13nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1200pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ECH8306-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 100V 2A ECH8 Rds On (Max) @ Id, Vgs: 225 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 1600pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| MCH3421-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 100V 0.8A MCPH3 Rds On (Max) @ Id, Vgs: 890 mOhm @ 400mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 4.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 800mA · Input Capacitance (Ciss) @ Vds: 165pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| EC4407KF-TR | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 20V 1.3A ESCP1208-4F Rds On (Max) @ Id, Vgs: 224 mOhm @ 600mA, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 4.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.3A · Input Capacitance (Ciss) @ Vds: 100pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 400mW · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK4124 | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 500V 20A TO-3PB Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 46.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1200pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ATP203-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 30V 75A ATPAK Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 38A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 2750pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| MCH3377-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 20V 3A MCPH3 Rds On (Max) @ Id, Vgs: 83 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 4.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 375pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ECH8411-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 20V 9A ECH8 Rds On (Max) @ Id, Vgs: 16 mOhm @ 4A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 21nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 1740pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.4W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK4094 | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 100A TO-220 Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 220nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 12500pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.75W · Mounting Type: Through Hole | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| MCH6337-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 20V 4.5A MCPH6 Rds On (Max) @ Id, Vgs: 49 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.3nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 670pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK4073LS | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 90A TO-220FI Rds On (Max) @ Id, Vgs: 5 mOhm @ 45A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 220nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 12500pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ATP104-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 30V 75A ATPAK Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 38A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 76nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 3950pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| FSS273-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH DUAL 45V 8A 8-SOP Rds On (Max) @ Id, Vgs: 22 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 45V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2225pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.4W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| CPH6429-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 2A CPH6 Rds On (Max) @ Id, Vgs: 220 mOhm @ 1A, 4V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 4.2nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 325pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ATP202-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 30V 50A ATPAK Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1650pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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