2SJ77-E — MOSFET P-CH 160V 0.5A TO-220
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| HAT2167H | Renesas Technology America | MOSFET N-CH 30V 40A LFPAK Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2700pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: LFPAK | Доп. информация Искать в поставщиках | ||
| RJK0397DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 30A W-PAK Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1110pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | RJK0346DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 65A WPAK Rds On (Max) @ Id, Vgs: 2 mOhm @ 32.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 49nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 7650pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| HAT2172N | Renesas Technology America | MOSFET N-CH 40V 30A LFPAK-I Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2420pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: LFPAK-i | Доп. информация Искать в поставщиках | ||
| HAT2164H-EL-E | Renesas Technology America | MOSFET N-CH 30V 60A 5LFPAK Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: LFPAK | от 0,00 | Доп. информация Искать в поставщиках | |
| HAT2164H | Renesas Technology America | MOSFET N-CH 30V 60A LFPAK Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: LFPAK | Доп. информация Искать в поставщиках | ||
| 2SK1058-E | Renesas Technology America | MOSFET N-CH 160V 7A TO-3P Drain to Source Voltage (Vdss): 160V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-3P | от 0,00 | Доп. информация Искать в поставщиках | |
| RJK03B9DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 30A W-PAK Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1110pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | RJK0332DPB-00#J0 | Renesas Technology America | MOSFET N-CH 30V 35A LFPAK Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 2180pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: LFPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| HAT2174H | Renesas Technology America | MOSFET N-CH 100V 20A 5LFPAK Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 33.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 2280pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: LFPAK | от 0,00 | Доп. информация Искать в поставщиках | |
| FS70SM-06#B00 | Renesas Technology America | MOSFET N-CH 60V 70A TO-3P Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 6540pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-3P | от 0,00 | Доп. информация Искать в поставщиках | |
| HAT2266N-EL-E | Renesas Technology America | MOSFET N-CH 60V 30A LFPAKI Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 30A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: LFPAK-i | от 0,00 | Доп. информация Искать в поставщиках | |
| HAT2201WP | Renesas Technology America | MOSFET N-CH 100V 15A WPAK Rds On (Max) @ Id, Vgs: 43 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1450pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 15W · Mounting Type: Surface Mount · Package / Case: WPAK | Доп. информация Искать в поставщиках | ||
 | HAT1048R | Renesas Technology America | MOSFET P-CH 30V 16A 8SOP Rds On (Max) @ Id, Vgs: 7 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 5700pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOP | Доп. информация Искать в поставщиках | |
| HAT2244WP-EL-E | Renesas Technology America | MOSFET N-CH 80V 30A WPAK Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 3250pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 | Доп. информация Искать в поставщиках | |
 | RJK0351DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 40A WPAK Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2560pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RJK0368DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 20A WPAK Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.2nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 730pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| RJK03B7DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 30A W-PAK Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1670pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| HAT2261H-EL-E | Renesas Technology America | MOSFET N-CH 30V 45A LFPAK Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 27nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 4400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: LFPAK | от 0,00 | Доп. информация Искать в поставщиках | |
 | RJK0349DSP-00#J0 | Renesas Technology America | MOSFET N-CH 30V 20A 8-SOP Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 3850pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| RJK0395DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 30A W-PAK Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1670pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| HAT2195WP | Renesas Technology America | MOSFET N-CH 30V 40A WPAK Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 40A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: WPAK | Доп. информация Искать в поставщиках | ||
| HAT2171H | Renesas Technology America | MOSFET N-CH 40V 40A 5LFPAK Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 3750pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: LFPAK | от 0,00 | Доп. информация Искать в поставщиках | |
| HAT2195R | Renesas Technology America | MOSFET N-CH 30V 18A 8-SOP Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 23nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 3400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 | Доп. информация Искать в поставщиках |
| FS70UM-2 | Renesas Technology America | MOSFET N-CH 100V 70A TO-220 Rds On (Max) @ Id, Vgs: 20 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 6540pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках |
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