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2SK2299N — MOSFET N-CH 450V 7A TO-220FN
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | RHK003N06T146 | Rohm Semiconductor | MOSFET N-CH 60V 300MA SOT-346 Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 33pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 200mW · Mounting Type: Surface Mount · Package / Case: SC-59-3, SMT3, SOT-346, TO-236 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RSQ035P03TR | Rohm Semiconductor | MOSFET P-CH 30V 3.5A TSMT6 Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 9.2nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 3.5A · Input Capacitance (Ciss) @ Vds: 780pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: TSMT6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | US5U3TR | Rohm Semiconductor | MOSFET N-CH 30V 1.5A TUMT5 Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 2.2nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 80pF @ 10V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: TUMT5 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RDN120N25 | Rohm Semiconductor | MOSFET N-CH 250V 12A TO-220FN Rds On (Max) @ Id, Vgs: 210 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 62nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1224pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220FN-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | QS5U28TR | Rohm Semiconductor | MOSFET P-CH 20V 2A TSMT5 Rds On (Max) @ Id, Vgs: 125 mOhm @ 2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 4.8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 450pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 900mW · Mounting Type: Surface Mount · Package / Case: TSMT5 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RK7002AT116 | Rohm Semiconductor | MOSFET N-CH 60V 300MA SOT-23 Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 33pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | QS6U22TR | Rohm Semiconductor | MOSFET P-CH 20V 1.5A TSMT6 Rds On (Max) @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 3nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 270pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 900mW · Mounting Type: Surface Mount · Package / Case: TSMT6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | QS5U34TR | Rohm Semiconductor | MOSFET N-CH 20V 1.5A TSMT5 Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 110pF @ 10V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 900mW · Mounting Type: Surface Mount · Package / Case: TSMT5 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RSS110N03TB | Rohm Semiconductor | MOSFET N-CH 30V 11A 8-SOIC Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1300pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RZR025P01TL | Rohm Semiconductor | MOSFET P-CH 12V 2.5A TSMT3 Rds On (Max) @ Id, Vgs: 61 mOhm @ 2.5A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 13nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.5A · Input Capacitance (Ciss) @ Vds: 1350pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: TSMT3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RUE002N02TL | Rohm Semiconductor | MOSFET N-CH 20V .2A EMT3 Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 200mA · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150mW · Mounting Type: Surface Mount · Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | US5U2TR | Rohm Semiconductor | MOSFET N-CH 30V 1.4A TUMT5 Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 2nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.4A · Input Capacitance (Ciss) @ Vds: 70pF @ 10V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: TUMT5 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | QS5U21TR | Rohm Semiconductor | MOSFET P-CH 20V 1.5A TSMT5 Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 4.2nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 325pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 900mW · Mounting Type: Surface Mount · Package / Case: TSMT5 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RTQ025P02TR | Rohm Semiconductor | MOSFET P-CH 20V 2.5A TSMT6 Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 6.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.5A · Input Capacitance (Ciss) @ Vds: 580pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: TSMT6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RTR030N05TL | Rohm Semiconductor | MOSFET N-CH 45V 3A TSMT3 Rds On (Max) @ Id, Vgs: 67 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 45V · Gate Charge (Qg) @ Vgs: 6.2nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 510pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: TSMT3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RSS090P03TB | Rohm Semiconductor | MOSFET P-CH 30V 9A 8-SOIC Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 39nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 4000pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RRS130N03TB1 | Rohm Semiconductor | MOSFET N-CH 30V 13A 8-SOIC Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 2600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RDX080N50FU6 | Rohm Semiconductor | MOSFET N-CH 500V 8A TO-220FM Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 920pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220FM-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RTU002P02T106 | Rohm Semiconductor | MOSFET P-CH 20V 250MA SOT-323 Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 250mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 250mA · Input Capacitance (Ciss) @ Vds: 50pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 200mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RK3055ETL | Rohm Semiconductor | MOSFET N-CH 60V 8A DPAK Rds On (Max) @ Id, Vgs: 150 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 520pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RJK005N03T146 | Rohm Semiconductor | MOSFET N-CH 30V 500MA SOT-346 Rds On (Max) @ Id, Vgs: 580 mOhm @ 500mA, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 4nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 60pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 200mW · Mounting Type: Surface Mount · Package / Case: SC-59-3, SMT3, SOT-346, TO-236 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RRS070N03TB1 | Rohm Semiconductor | MOSFET N-CH 30V 7A 8-SOIC Rds On (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11.6nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 900pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RHU002N06T106 | Rohm Semiconductor | MOSFET N-CH 60V 200MA SOT-323 Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 4.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 15pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RSS075P03TB | Rohm Semiconductor | MOSFET P-CH 30V 7.5A 8-SOIC Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 30nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 7.5A · Input Capacitance (Ciss) @ Vds: 2900pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RTR011P02TL | Rohm Semiconductor | MOSFET P-CH 20V 1.1A TSMT3 Drain to Source Voltage (Vdss): 20V · Current - Continuous Drain (Id) @ 25° C: 1A · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: TSMT3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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