2SK2315TYTR — MOSFET N-CH 60V 2A UPAK
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| HAT2167H | Renesas Technology America | MOSFET N-CH 30V 40A LFPAK Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2700pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: LFPAK | Доп. информация Искать в поставщиках | ||
| HAT2198WP | Renesas Technology America | MOSFET N-CH 30V 25A WPAK Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 15W · Mounting Type: Surface Mount · Package / Case: WPAK | Доп. информация Искать в поставщиках | ||
| HAT2266H | Renesas Technology America | MOSFET N-CH 60V 30A 5LFPAK Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 3600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 23W · Mounting Type: Surface Mount · Package / Case: LFPAK | Доп. информация Искать в поставщиках | ||
| 2SK214 | Renesas Technology America | MOSFET N-CH 160V 500MA TO-220AB Drain to Source Voltage (Vdss): 160V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 90pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
| RJK0393DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 40A W-PAK Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 21nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 3270pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| FS70UM-2 | Renesas Technology America | MOSFET N-CH 100V 70A TO-220 Rds On (Max) @ Id, Vgs: 20 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 6540pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| HAF1002-90STL-E | Renesas Technology America | MOSFET P-CH 60V 15A 4LDPAK Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 15A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: LDPAK | от 0,00 | Доп. информация Искать в поставщиках | |
| RJK0392DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 45A W-PAK Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 45A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
 | HAT2199R-EL-E | Renesas Technology America | MOSFET N-CH 30V 11A 8SOP Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1060pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 | Доп. информация Искать в поставщиках |
 | RJK0328DPB-00#J0 | Renesas Technology America | MOSFET N-CH 30V 60A LFPAK Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 42nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 6380pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Surface Mount · Package / Case: LFPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| HAT2168H | Renesas Technology America | MOSFET N-CH 30V 30A LFPAK Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1730pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 15W · Mounting Type: Surface Mount · Package / Case: LFPAK | Доп. информация Искать в поставщиках | ||
| HAT2266N-EL-E | Renesas Technology America | MOSFET N-CH 60V 30A LFPAKI Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 30A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: LFPAK-i | от 0,00 | Доп. информация Искать в поставщиках | |
 | RJK0346DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 65A WPAK Rds On (Max) @ Id, Vgs: 2 mOhm @ 32.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 49nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 7650pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | RJK0366DSP-00#J0 | Renesas Technology America | MOSFET N-CH 30V 11A 8-SOP Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1010pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| HAT2208WP | Renesas Technology America | MOSFET N-CH 30V 12A WPAK Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 1.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 5W · Mounting Type: Surface Mount · Package / Case: WPAK | Доп. информация Искать в поставщиках | ||
| HAT1072H | Renesas Technology America | MOSFET P-CH 30V 40A 5LFPAK Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 155nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 9500pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: 5LFPAK | Доп. информация Искать в поставщиках | ||
| RJK0397DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 30A W-PAK Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1110pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| HAT2160N-EL-E | Renesas Technology America | MOSFET N-CH 20V 60A LFPAKI Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: LFPAK-i | от 0,00 | Доп. информация Искать в поставщиках | |
 | RJK0365DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 30A WPAK Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1180pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| 2SJ162 | Renesas Technology America | MOSFET P-CH 160V 7A TO-3P Drain to Source Voltage (Vdss): 160V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 900pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-3P | Доп. информация Искать в поставщиках | ||
 | RJK0355DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 30A WPAK Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.3nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 860pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| HAT2172H | Renesas Technology America | MOSFET N-CH 40V 30A LFPAK Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2420pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: LFPAK | Доп. информация Искать в поставщиках | ||
| RJK03B8DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 30A W-PAK Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 9nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1330pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 28W · Mounting Type: Surface Mount · Package / Case: WPAK | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| HAT1043M-EL-E | Renesas Technology America | MOSFET P-CH 20V 4.4A 6TSOP Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.4A · Input Capacitance (Ciss) @ Vds: 750pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.05W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 | Доп. информация Искать в поставщиках | |
| RJK0369DSP-00#J0 | Renesas Technology America | MOSFET N-CH 30V 9A 8-SOP Rds On (Max) @ Id, Vgs: 15.6 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 810pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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