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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
2SK2311(TE24R,Q) | Toshiba | MOSFET N-CH 60V 25A TO-220FL Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 1000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220FL | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2964(TE12L) | Toshiba | MOSFET N-CH 30V 2A PW-MINI Rds On (Max) @ Id, Vgs: 180 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 140pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI | Доп. информация Искать в поставщиках | ||
2SK3132(Q) | Toshiba | MOSFET N-CH 500V 50A TO-3P(L) Rds On (Max) @ Id, Vgs: 95 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 280nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 11000pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B) | от 0,00 | Доп. информация Искать в поставщиках | |
TPCA8031-H(TE12L,Q | Toshiba | MOSFET N-CH 30V 24A SOP-8 ADV Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 2150pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2606 | Toshiba | MOSFET N-CH 800V 8A 2-16F1B Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 85W · Mounting Type: Through Hole · Package / Case: 2-16F1B | Доп. информация Искать в поставщиках | ||
2SK3131 | Toshiba | MOSFET N-CH 500V 50A TO-3P(L) Rds On (Max) @ Id, Vgs: 110 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 280nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 11000pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-3P(L) (2-21F1B) | Доп. информация Искать в поставщиках | ||
2SK3562(Q) | Toshiba | MOSFET N-CH 600V 6A TO-220SIS Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1050pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220 (SIS) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK2699 | Toshiba | MOSFET N-CH 600V 12A 2-16C1B Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
2SK2173 | Toshiba | MOSFET N-CH 60V 50A 2-16C1B Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3550pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
TPCS8004(TE12L,Q) | Toshiba | MOSFET N-CH 200V 1.3A 2-3R1B Rds On (Max) @ Id, Vgs: 800 mOhm @ 600mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.3A · Input Capacitance (Ciss) @ Vds: 380pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 600mW · Mounting Type: Surface Mount · Package / Case: 2-3R1B | от 0,00 | Доп. информация Искать в поставщиках | |
TPCA8028-H(TE12LQM | Toshiba | MOSFET N-CH 30V 50A SOP-8 ADV Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 88nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 7800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK3301(TE16L1,NQ) | Toshiba | MOSFET N-CH 900V 1A SC-64 Rds On (Max) @ Id, Vgs: 20 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1A · Input Capacitance (Ciss) @ Vds: 165pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2314 | Toshiba | MOSFET N-CH 100V 27A TO-220AB Rds On (Max) @ Id, Vgs: 85 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 1100pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 75W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
TPCA8048-H(TE12L,Q | Toshiba | MOSFET N-CH 60V 35A 8-SOP ADV Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 35A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
TK12A60U(Q) | Toshiba | MOSFET N-CH 600V 12A SC-67 Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
TPC8018-H(TE12L,Q) | Toshiba | MOSFET N-CH 30V 18A 8-SOP Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 2265pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 | Доп. информация Искать в поставщиках | |
2SJ610(TE16L1,NQ) | Toshiba | MOSFET P-CH 250V 2A PW-MOLD Rds On (Max) @ Id, Vgs: 2.55 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 381pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | от 0,00 | Доп. информация Искать в поставщиках | |
TPCF8001(TE85L) | Toshiba | MOSFET N-CH 30V 7A VS-8 Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1270pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: VS-8 (2-3U1A) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK3869(Q) | Toshiba | MOSFET N-CH 450V 10A SC-67 Rds On (Max) @ Id, Vgs: 680 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 450V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1050pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3388(TE24L,Q) | Toshiba | MOSFET N-CH 250V 20A SC-97 Rds On (Max) @ Id, Vgs: 105 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 100nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Surface Mount | от 0,00 | Доп. информация Искать в поставщиках | |
TPCA8030-H(TE12LQM | Toshiba | MOSFET N-CH 30V 24A SOP-8 ADV Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 2150pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3762(M) | Toshiba | MOSFET N-CH 900V 2.5A TO-220AB Rds On (Max) @ Id, Vgs: 6.4 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.5A · Input Capacitance (Ciss) @ Vds: 470pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 62W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
TPCA8018-H(TE12L,Q | Toshiba | MOSFET N-CH 30V 30A SOP-8 ADV Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2846pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | от 0,00 | Доп. информация Искать в поставщиках | |
TPCS8102(TE12L,Q) | Toshiba | MOSFET P-CH SGL -20V -6A TSSOP-8 Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 37nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 2740pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 600mW · Mounting Type: Surface Mount · Package / Case: 8-TSSOP | Доп. информация Искать в поставщиках | ||
2SK2507(F) | Toshiba | MOSFET N-CH 50V 25A SC-67 Rds On (Max) @ Id, Vgs: 46 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 900pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: 2-10R1B | от 0,00 | Доп. информация Искать в поставщиках |
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