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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
TPC8045-H(TE12L,QM | Toshiba | MOSFET N-CH 40V 18A 8-SOP Drain to Source Voltage (Vdss): 40V · Current - Continuous Drain (Id) @ 25° C: 18A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK2838(SM,Q) | Toshiba | MOSFET N-CH 400V 5.5A TO-220SM Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 720pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10S1B | от 0,00 | Доп. информация Искать в поставщиках | |
TPCS8008-H(TE12L,Q | Toshiba | MOSFET N-CH 250V 1.7A 8-TSSOP Rds On (Max) @ Id, Vgs: 580 mOhm @ 800mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 600mW · Mounting Type: Surface Mount · Package / Case: 2-3R1F | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2749 | Toshiba | MOSFET N-CH 900V 7A 2-16C1B Rds On (Max) @ Id, Vgs: 2 Ohm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
TPCA8018-H(TE12LQM | Toshiba | MOSFET N-CH 30V 30A SOP-8 ADV Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2846pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2607 | Toshiba | MOSFET N-CH 800V 9A 2-16C1B Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 2160pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
TPCA8006-H(TE12LQM | Toshiba | MOSFET N-CH 100V 18A SOP-8 ADV Rds On (Max) @ Id, Vgs: 67 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 780pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: 2-5Q1A | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2967 | Toshiba | MOSFET N-CH 250V 30A 2-16C1B Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 132nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 5400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | Доп. информация Искать в поставщиках | ||
2SK2949(TE24L,Q) | Toshiba | MOSFET N-CH 400V 10A TO-220 Rds On (Max) @ Id, Vgs: 550 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1340pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Surface Mount · Package / Case: 2-10S2B | от 0,00 | Доп. информация Искать в поставщиках | |
2SJ567(TE16L1,NQ) | Toshiba | MOSFET P-CH 200V 2.5A PW-MOLD Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.5A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.5A · Input Capacitance (Ciss) @ Vds: 410pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: 2-7J1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3757(Q) | Toshiba | MOSFET N-CH 450V 2A SC-67 Rds On (Max) @ Id, Vgs: 2.45 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 450V · Gate Charge (Qg) @ Vgs: 9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 330pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
TPCA8051-H(TE12L,Q | Toshiba | MOSFET N-CH 80V 28A 8-SOP ADV Drain to Source Voltage (Vdss): 80V · Current - Continuous Drain (Id) @ 25° C: 28A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: 8-SOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
TK60A08J1(Q) | Toshiba | MOSFET N-CH 75V 60A SC-67 Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 86nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 5450pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3568(Q,M) | Toshiba | MOSFET N-CH 500V 12A TO-220SIS Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 42nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: 2-10U1B | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK2549(TE12L,F) | Toshiba | MOSFET N-CH 16V 2A PW-MINI Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4V · Drain to Source Voltage (Vdss): 16V · Gate Charge (Qg) @ Vgs: 5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 260pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
2SK3068(TE24L,Q) | Toshiba | MOSFET N-CH 500V 12A TO-220FL Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 2040pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220FL | от 0,00 | Доп. информация Искать в поставщиках | |
TK20D60U(Q) | Toshiba | MOSFET N-CH 600V 20A TO-220W Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1470pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
TPCP8102(TE85L,F) | Toshiba | MOSFET P-CH 20V 7.3A PS-8 Rds On (Max) @ Id, Vgs: 18 mOhm @ 3.6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 33nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 7.2A · Input Capacitance (Ciss) @ Vds: 2560pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 840mW · Mounting Type: Surface Mount · Package / Case: 2-3V1K | от 0,00 | Доп. информация Искать в поставщиках | |
2SK1529-Y(F) | Toshiba | MOSFET N-CH 180V 10A TO-3PN Drain to Source Voltage (Vdss): 180V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 700pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 120W · Mounting Type: Through Hole · Package / Case: 2-16C1B (TO-247 N) | от 0,00 | Доп. информация Искать в поставщиках | |
TK55D10J1(Q) | Toshiba | MOSFET N-CH 100V 55A 2-10V1A Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 27A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 5700pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: 2-10V1A | от 0,00 | Доп. информация Искать в поставщиках | |
2SK3846(Q) | Toshiba | MOSFET N-CH 40V 26A SC-67 Rds On (Max) @ Id, Vgs: 16 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 26A · Input Capacitance (Ciss) @ Vds: 1980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Through Hole · Package / Case: 2-10R1B | от 0,00 | Доп. информация Искать в поставщиках | |
TPC8021-H(TE12LQ,M | Toshiba | MOSFET N-CH 30V 11A SOP8 2-6J1B Rds On (Max) @ Id, Vgs: 17 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 640pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 2-6J1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2615(TE12L,F) | Toshiba | MOSFET N-CH 60V 2A PW-MINI Rds On (Max) @ Id, Vgs: 300 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 150pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2417(F) | Toshiba | MOSFET N-CH 250V 7.5A SC-67 Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.5A · Input Capacitance (Ciss) @ Vds: 700pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: 2-10R1B | от 0,00 | Доп. информация Искать в поставщиках | |
2SK2549(TE12L) | Toshiba | MOSFET N-CH 16V 2A PW-MINI Rds On (Max) @ Id, Vgs: 290 mOhm @ 1A, 4V · Drain to Source Voltage (Vdss): 16V · Gate Charge (Qg) @ Vgs: 5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 260pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: PW-MINI | Доп. информация Искать в поставщиках |
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