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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APL602B2G — MOSFET N-CH 600V 49A T-MAX

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs125 mOhm @ 24.5A, 12V
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C49A
Input Capacitance (Ciss) @ Vds9000pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max730W
Mounting TypeThrough Hole
Package / CaseT-MAX
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT1003RBFLLGMicrosemi-PPGMOSFET N-CH 1000V 4A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 694pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 139W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APTM50SKM19GMicrosemi-PPGMOSFET N-CH 500V 163A SP6
Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 492nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 163A  ·  Input Capacitance (Ciss) @ Vds: 22400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1136W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP6
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APT6040BVFRGMicrosemi-PPGMOSFET N-CH 600V 16A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 3120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT20M38BVFRGMicrosemi-PPGMOSFET N-CH 200V 67A TO-247
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 38 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 225nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 67A  ·  Input Capacitance (Ciss) @ Vds: 6120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT12040JFLLMicrosemi-PPGMOSFET N-CH 1200V 24A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 7247pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT30M19JVRMicrosemi-PPGMOSFET N-CH 300V 130A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 975nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 130A  ·  Input Capacitance (Ciss) @ Vds: 21600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8056SVRGMicrosemi-PPGMOSFET N-CH 800V 16A D3PAK
Rds On (Max) @ Id, Vgs: 560 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 4440pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 370W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT20N60BCFMicrosemi-PPGMOSFET N-CH 600V 20A TO-247
Серия: CoolMOS™  ·  Rds On (Max) @ Id, Vgs: 220 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2520pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 208W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT30M36JFLLMicrosemi-PPGMOSFET N-CH 300V 76A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 36 mOhm @ 38A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 76A  ·  Input Capacitance (Ciss) @ Vds: 6480pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 463W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20F50BAPT20F50BMicrosemi-PPGMOSFET N-CH 500V 20A TO-247
Rds On (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2950pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 290W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT50M50JVRMicrosemi-PPGMOSFET N-CH 500V 77A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 1000nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 77A  ·  Input Capacitance (Ciss) @ Vds: 19600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 700W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT37M100LAPT37M100LMicrosemi-PPGMOSFET N-CH 1000V 37A TO-264
Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1135W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT40N60JCU2Microsemi-PPGMOSFET N-CH 600V 40A SOT-227
Rds On (Max) @ Id, Vgs: 70 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 259nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 7015pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 290W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APTM20SKM10TGMicrosemi-PPGMOSFET N-CH 200V 175A SP4
Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 224nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 175A  ·  Input Capacitance (Ciss) @ Vds: 13700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP4 Module
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APT20M20JLLMicrosemi-PPGMOSFET N-CH 200V 104A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 52A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 104A  ·  Input Capacitance (Ciss) @ Vds: 6850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 463W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M20LFLLGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 6850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 568W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6017B2LLGMicrosemi-PPGMOSFET N-CH 600V 35A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT5010LLLGMicrosemi-PPGMOSFET N-CH 500V 46A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 46A  ·  Input Capacitance (Ciss) @ Vds: 4360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT25M100JMicrosemi-PPGMOSFET N-CH 1000V 25A SOT-227
Серия: POWER MOS 8™  ·  Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 305nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 9835pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 545W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6015JVRMicrosemi-PPGMOSFET N-CH 600V 35A SOT-227
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 475nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 9000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 450W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APTM20SKM08TGMicrosemi-PPGMOSFET N-CH 200V 208A SP4
Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 280nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 208A  ·  Input Capacitance (Ciss) @ Vds: 14400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 781W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SP4 Module
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APT10040B2VFRGMicrosemi-PPGMOSFET N-CH 1000V 25A T-MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 630nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 9400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 625W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10035B2LLGMicrosemi-PPGMOSFET N-CH 1000V 28A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 5185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10035LFLLGMicrosemi-PPGMOSFET N-CH 1000V 28A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 5185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT60M80L2VFRGMicrosemi-PPGMOSFET N-CH 600V 65A TO-264MAX
Серия: POWER MOS V®  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 590nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 13300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 833W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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