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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APT10026JLL — MOSFET N-CH 1000V 30A SOT-227

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
СерияPOWER MOS 7®
Rds On (Max) @ Id, Vgs260 mOhm @ 15A, 10V
Drain to Source Voltage (Vdss)1000V (1kV)
Gate Charge (Qg) @ Vgs267nC @ 10V
Current - Continuous Drain (Id) @ 25° C30A
Input Capacitance (Ciss) @ Vds7114pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max595W
Mounting TypeChassis Mount
Package / CaseSOT-227
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT1003RBFLLGMicrosemi-PPGMOSFET N-CH 1000V 4A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 34nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4A  ·  Input Capacitance (Ciss) @ Vds: 694pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 139W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT12040JFLLMicrosemi-PPGMOSFET N-CH 1200V 24A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 7247pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT30M36JFLLMicrosemi-PPGMOSFET N-CH 300V 76A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 36 mOhm @ 38A, 10V  ·  Drain to Source Voltage (Vdss): 300V  ·  Gate Charge (Qg) @ Vgs: 115nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 76A  ·  Input Capacitance (Ciss) @ Vds: 6480pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 463W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M20JLLMicrosemi-PPGMOSFET N-CH 200V 104A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 52A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 104A  ·  Input Capacitance (Ciss) @ Vds: 6850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 463W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT20M20LFLLGMicrosemi-PPGMOSFET N-CH 200V 100A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 6850pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 568W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6017B2LLGMicrosemi-PPGMOSFET N-CH 600V 35A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT5010LLLGMicrosemi-PPGMOSFET N-CH 500V 46A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 46A  ·  Input Capacitance (Ciss) @ Vds: 4360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10035B2LLGMicrosemi-PPGMOSFET N-CH 1000V 28A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 5185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10035LFLLGMicrosemi-PPGMOSFET N-CH 1000V 28A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 186nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 28A  ·  Input Capacitance (Ciss) @ Vds: 5185pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6010B2LLGMicrosemi-PPGMOSFET N-CH 600V 54A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 27A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 54A  ·  Input Capacitance (Ciss) @ Vds: 6710pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10021JFLLMicrosemi-PPGMOSFET N-CH 1000V 37A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 18.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 395nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 9750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10078BLLGMicrosemi-PPGMOSFET N-CH 1000V 14A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 780 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2525pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT12040L2FLLGMicrosemi-PPGMOSFET N-CH 1200V 30A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 275nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 7247pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT8020B2LLGMicrosemi-PPGMOSFET N-CH 800V 38A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 19A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 38A  ·  Input Capacitance (Ciss) @ Vds: 5200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT6010LFLLGMicrosemi-PPGMOSFET N-CH 600V 54A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 27A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 54A  ·  Input Capacitance (Ciss) @ Vds: 6710pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT8024JLLMicrosemi-PPGMOSFET N-CH 800V 29A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 14.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 29A  ·  Input Capacitance (Ciss) @ Vds: 4670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT50M65JLLMicrosemi-PPGMOSFET N-CH 500V 58A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 65 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 141nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 7010pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT1201R2BFLLGMicrosemi-PPGMOSFET N-CH 1200V 12A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 2540pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT6025BFLLGMicrosemi-PPGMOSFET N-CH 600V 24A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 2910pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 325W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT8052SLLGMicrosemi-PPGMOSFET N-CH 800V 15A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 520 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 2035pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 298W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT1201R2SFLLGMicrosemi-PPGMOSFET N-CH 1200V 12A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 2540pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT1204R7SFLLGMicrosemi-PPGMOSFET N-CH 1200V 3.5A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1.75A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 31nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 715pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 135W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT50M65B2LLGMicrosemi-PPGMOSFET N-CH 500V 67A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 65 mOhm @ 33.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 141nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 67A  ·  Input Capacitance (Ciss) @ Vds: 7010pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT6017LFLLGMicrosemi-PPGMOSFET N-CH 600V 35A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 500W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT6017JFLLMicrosemi-PPGMOSFET N-CH 600V 31A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 15.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 100nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 375W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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