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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 

APT30M61SLLG — MOSFET N-CH 300V 54A D3PAK

ПроизводительMicrosemi-PPG
Вредные веществаRoHS   Без свинца
СерияPOWER MOS 7®
Rds On (Max) @ Id, Vgs61 mOhm @ 27A, 10V
Drain to Source Voltage (Vdss)300V
Gate Charge (Qg) @ Vgs64nC @ 10V
Current - Continuous Drain (Id) @ 25° C54A
Input Capacitance (Ciss) @ Vds3720pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max403W
Mounting TypeSurface Mount
Package / CaseD³Pak (2 leads + tab)
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
APT50M38JLLMicrosemi-PPGMOSFET N-CH 500V 88A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 38 mOhm @ 44A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 270nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 88A  ·  Input Capacitance (Ciss) @ Vds: 12000pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8024B2LLGMicrosemi-PPGMOSFET N-CH 800V 31A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 15.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 4670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT5010B2LLGMicrosemi-PPGMOSFET N-CH 500V 46A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 46A  ·  Input Capacitance (Ciss) @ Vds: 4360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT10045LLLGMicrosemi-PPGMOSFET N-CH 1000V 23A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 154nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10090BLLGMicrosemi-PPGMOSFET N-CH 1000V 12A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 71nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1969pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 298W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT60M75JFLLMicrosemi-PPGMOSFET N-CH 600V 58A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 29A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 58A  ·  Input Capacitance (Ciss) @ Vds: 8930pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT5010JLLMicrosemi-PPGMOSFET N-CH 500V 41A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 20.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 41A  ·  Input Capacitance (Ciss) @ Vds: 4360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 378W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT50M75JFLLMicrosemi-PPGMOSFET N-CH 500V 51A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 25.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 125nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 51A  ·  Input Capacitance (Ciss) @ Vds: 5590pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 460W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT5010JFLLMicrosemi-PPGMOSFET N-CH 500V 41A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 20.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 41A  ·  Input Capacitance (Ciss) @ Vds: 4360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 378W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT6021BLLGMicrosemi-PPGMOSFET N-CH 600V 29A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 14.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 29A  ·  Input Capacitance (Ciss) @ Vds: 3470pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 400W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT6025SLLGMicrosemi-PPGMOSFET N-CH 600V 24A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 250 mOhm @ 12A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 24A  ·  Input Capacitance (Ciss) @ Vds: 2910pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 325W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT5518BFLLGMicrosemi-PPGMOSFET N-CH 550V 31A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 15.5A, 10V  ·  Drain to Source Voltage (Vdss): 550V  ·  Gate Charge (Qg) @ Vgs: 67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 3286pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT60M75L2FLLGMicrosemi-PPGMOSFET N-CH 600V 73A TO-264MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 195nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 73A  ·  Input Capacitance (Ciss) @ Vds: 8930pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 893W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT10090SFLLGMicrosemi-PPGMOSFET N-CH 1000V 12A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 71nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1969pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 298W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT6021SFLLGMicrosemi-PPGMOSFET N-CH 600V 29A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 14.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 80nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 29A  ·  Input Capacitance (Ciss) @ Vds: 3470pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 400W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT6010JFLLMicrosemi-PPGMOSFET N-CH 600V 47A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 100 mOhm @ 23.5A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 6710pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8024B2FLLGMicrosemi-PPGMOSFET N-CH 800V 31A T-MAX
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 15.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 4670pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 565W  ·  Mounting Type: Through Hole  ·  Package / Case: T-MAX
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APT12031JFLLMicrosemi-PPGMOSFET N-CH 1200V 30A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 310 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 365nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 9480pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8043SFLLGMicrosemi-PPGMOSFET N-CH 800V 20A D3PAK
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 430 mOhm @ 10mA, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 85nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 403W  ·  Mounting Type: Surface Mount  ·  Package / Case: D³Pak (2 leads + tab)
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APT50M50JLLMicrosemi-PPGMOSFET N-CH 500V 71A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 35.5A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 71A  ·  Input Capacitance (Ciss) @ Vds: 10550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 595W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT10021JLLMicrosemi-PPGMOSFET N-CH 1000V 37A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 210 mOhm @ 18.5A, 10V  ·  Drain to Source Voltage (Vdss): 1000V (1kV)  ·  Gate Charge (Qg) @ Vgs: 395nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 37A  ·  Input Capacitance (Ciss) @ Vds: 9750pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT8052BFLLGMicrosemi-PPGMOSFET N-CH 800V 15A TO-247
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 520 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 2035pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 298W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247
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APT12057LFLLGMicrosemi-PPGMOSFET N-CH 1200V 22A TO-264
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 185nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 5155pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 690W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-264
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APT8011JLLMicrosemi-PPGMOSFET N-CH 800V 51A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 110 mOhm @ 25.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 650nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 51A  ·  Input Capacitance (Ciss) @ Vds: 9480pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 694W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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APT12057JFLLMicrosemi-PPGMOSFET N-CH 1200V 19A SOT-227
Серия: POWER MOS 7®  ·  Rds On (Max) @ Id, Vgs: 570 mOhm @ 9.5A, 10V  ·  Drain to Source Voltage (Vdss): 1200V (1.2kV)  ·  Gate Charge (Qg) @ Vgs: 185nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 5155pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 520W  ·  Mounting Type: Chassis Mount  ·  Package / Case: SOT-227
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