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APT66M60B2 — MOSFET N-CH 600V 66A T-MAX
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| APT50M38JLL | Microsemi-PPG | MOSFET N-CH 500V 88A SOT-227 Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 38 mOhm @ 44A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 270nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 88A · Input Capacitance (Ciss) @ Vds: 12000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 694W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT8024B2LLG | Microsemi-PPG | MOSFET N-CH 800V 31A T-MAX Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 240 mOhm @ 15.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 160nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 4670pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 565W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
| APT5010B2LLG | Microsemi-PPG | MOSFET N-CH 500V 46A T-MAX Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 95nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 46A · Input Capacitance (Ciss) @ Vds: 4360pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 520W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
| APT10025JVR | Microsemi-PPG | MOSFET N-CH 1000V 34A SOT-227 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 250 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 990nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 18000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 700W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT10045LLLG | Microsemi-PPG | MOSFET N-CH 1000V 23A TO-264 Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 450 mOhm @ 11.5A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 154nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 4350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 565W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT6011LVRG | Microsemi-PPG | MOSFET N-CH 600V 49A TO-264 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 110 mOhm @ 24.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 450nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 49A · Input Capacitance (Ciss) @ Vds: 8900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 625W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT10090BLLG | Microsemi-PPG | MOSFET N-CH 1000V 12A TO-247 Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 71nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1969pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 298W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT5014LVFRG | Microsemi-PPG | MOSFET N-CH 500V 37A TO-264 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 18.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 350nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 37A · Input Capacitance (Ciss) @ Vds: 6720pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 450W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT6030BVFRG | Microsemi-PPG | MOSFET N-CH 600V 21A TO-247 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 10.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 150nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 3750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 298W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| APTC60DAM18CTG | Microsemi-PPG | MOSFET N-CH 600V 143A SP4 Rds On (Max) @ Id, Vgs: 18 mOhm @ 71.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 1036nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 143A · Input Capacitance (Ciss) @ Vds: 28000pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 833W · Mounting Type: Chassis Mount · Package / Case: SP4 Module | от 0,00 | Доп. информация Искать в поставщиках | |
| APT20M40BVRG | Microsemi-PPG | MOSFET N-CH 200V 59A TO-247 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 195nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 59A · Input Capacitance (Ciss) @ Vds: 4860pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT6015B2VRG | Microsemi-PPG | MOSFET N-CH 600V 38A T-MAX Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 475nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 38A · Input Capacitance (Ciss) @ Vds: 9000pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 520W · Mounting Type: Through Hole · Package / Case: T-MAX | от 0,00 | Доп. информация Искать в поставщиках | |
 | APT14M120B | Microsemi-PPG | MOSFET N-CH 1200V 14A TO-247 Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 7A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 145nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 4765pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 625W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| APT6035BVRG | Microsemi-PPG | MOSFET N-CH 600V 18A TO-247 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 4140pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT5014LVRG | Microsemi-PPG | MOSFET N-CH 500V 37A TO-264 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 140 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 350nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 37A · Input Capacitance (Ciss) @ Vds: 6720pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 450W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT30M40LVFRG | Microsemi-PPG | MOSFET N-CH 300V 76A TO-264 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 425nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 76A · Input Capacitance (Ciss) @ Vds: 10200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 520W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
| APTM120SK68T1G | Microsemi-PPG | MOSFET N-CH 1200V 15A SP1 Rds On (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 1200V (1.2kV) · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 6696pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 357W · Mounting Type: Chassis Mount · Package / Case: SP1 Module | от 0,00 | Доп. информация Искать в поставщиках | |
| APT30M40JVFR | Microsemi-PPG | MOSFET N-CH 300V 70A SOT-227 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 425nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 10200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 450W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT60M75JFLL | Microsemi-PPG | MOSFET N-CH 600V 58A SOT-227 Серия: POWER MOS 7® · Rds On (Max) @ Id, Vgs: 75 mOhm @ 29A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 195nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 58A · Input Capacitance (Ciss) @ Vds: 8930pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 595W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT34M60B | Microsemi-PPG | MOSFET N-CH 600V 34A TO-247 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 210 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 165nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 34A · Input Capacitance (Ciss) @ Vds: 6640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 624W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT10M19BVFRG | Microsemi-PPG | MOSFET N-CH 100V 75A TO-247 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 19 mOhm @ 37.5A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 300nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 6120pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 370W · Mounting Type: Through Hole · Package / Case: TO-247 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT10050JVR | Microsemi-PPG | MOSFET N-CH 1000V 19A SOT-227 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 500nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 7900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 450W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT38F80L | Microsemi-PPG | MOSFET N-CH 800V 41A TO-264 Серия: POWER MOS 8™ · Rds On (Max) @ Id, Vgs: 280 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 41A · Input Capacitance (Ciss) @ Vds: 8070pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1040W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT10M11LVFRG | Microsemi-PPG | MOSFET N-CH 100V 100A TO-264 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 450nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 10300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 520W · Mounting Type: Through Hole · Package / Case: TO-264 | от 0,00 | Доп. информация Искать в поставщиках | |
| APT50M60JVFR | Microsemi-PPG | MOSFET N-CH 500V 63A SOT-227 Серия: POWER MOS V® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 31.5A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 560nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 63A · Input Capacitance (Ciss) @ Vds: 10600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 568W · Mounting Type: Chassis Mount · Package / Case: SOT-227 | от 0,00 | Доп. информация Искать в поставщиках |
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