CPH3340-TL-E — MOSFET P-CH 20V 5A CPH3
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| CPH3430-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 2A CPH3 Rds On (Max) @ Id, Vgs: 220 mOhm @ 1A, 4V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 4.2nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 325pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| MCH3475-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 30V 1.8A MCPH3 Rds On (Max) @ Id, Vgs: 180 mOhm @ 900mA, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 88pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 800mW · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK3709 | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 100V 37A TO-220ML Rds On (Max) @ Id, Vgs: 25 mOhm @ 19A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 117nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 37A · Input Capacitance (Ciss) @ Vds: 6250pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| 6LN04SS-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 0.2A SSFP Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 100mA, 4V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 26pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150mW · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ATP212-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 35A ATPAK Rds On (Max) @ Id, Vgs: 23 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 34.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1820pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ATP404-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 95A ATPAK Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 48A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 95A · Input Capacitance (Ciss) @ Vds: 6400pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 70W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| CPH3324-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 60V 1.2A CPH3 Rds On (Max) @ Id, Vgs: 530 mOhm @ 600mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 6.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.2A · Input Capacitance (Ciss) @ Vds: 265pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| CPH3348-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 12V 3A CPH3 Rds On (Max) @ Id, Vgs: 70 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 5.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 405pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| EC4407KF-TR | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 20V 1.3A ESCP1208-4F Rds On (Max) @ Id, Vgs: 224 mOhm @ 600mA, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 4.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.3A · Input Capacitance (Ciss) @ Vds: 100pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 400mW · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| MCH6412-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 30V 5A MCPH6 Rds On (Max) @ Id, Vgs: 41 mOhm @ 3A, 4V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 790pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| FSS804-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH DUAL 30V 14A 8-SOP Rds On (Max) @ Id, Vgs: 10 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 3000pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.3W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| 2SJ683-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 60V 65A ZP Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 290nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 15500pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| MCH6337-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 20V 4.5A MCPH6 Rds On (Max) @ Id, Vgs: 49 mOhm @ 3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.3nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 670pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| MCH5837-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH/DIODE SCHOTTKY MCPH5 Rds On (Max) @ Id, Vgs: 145 mOhm @ 1A, 4V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 1.8nC @ 4V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 115pF @ 10V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 800mW · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| MCH3377-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 20V 3A MCPH3 Rds On (Max) @ Id, Vgs: 83 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 4.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3A · Input Capacitance (Ciss) @ Vds: 375pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ATP602-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 600V 5A ATPAK Drain to Source Voltage (Vdss): 600V · Current - Continuous Drain (Id) @ 25° C: 5A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ECH8306-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 100V 2A ECH8 Rds On (Max) @ Id, Vgs: 225 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 1600pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ATP113-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 60V 35A ATPAK Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 35A · FET Polarity: P-Channel · FET Feature: Standard · Mounting Type: Surface Mount | от 0,00 | Доп. информация Искать в поставщиках | |
| MCH3421-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 100V 0.8A MCPH3 Rds On (Max) @ Id, Vgs: 890 mOhm @ 400mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 4.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 800mA · Input Capacitance (Ciss) @ Vds: 165pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 900mW · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK4096LS | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 500V 8A TO-220FI Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 600pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Through Hole | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ECH8402-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 30V 10A ECH8 Rds On (Max) @ Id, Vgs: 15 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ECH8305-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 60V 4A ECH8 Rds On (Max) @ Id, Vgs: 85 mOhm @ 2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4A · Input Capacitance (Ciss) @ Vds: 1680pF @ 20V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| 2SK4094 | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 60V 100A TO-220 Rds On (Max) @ Id, Vgs: 5 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 220nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 12500pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.75W · Mounting Type: Through Hole | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| ATP208-TL-H | SANYO Semiconductor (U.S.A) Co | MOSFET N-CH 40V 90A ATPAK Rds On (Max) @ Id, Vgs: 6 mOhm @ 45A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 83nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 4510pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| CPH6341-TL-E | SANYO Semiconductor (U.S.A) Co | MOSFET P-CH 30V 5A CPH6 Rds On (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 10nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 430pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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