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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
IPI06CN10N G | Infineon Technologies | MOSFET N-CH 100V 100A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 139nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 9200pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
BSC090N03LSG | Infineon Technologies | MOSFET N-CH 30V 48A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 48A · Input Capacitance (Ciss) @ Vds: 1500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 32W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SPD50N06S2L-13 | Infineon Technologies | MOSFET N-CH 55V 50A DPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 69nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2300pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 136W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
BSO201SPT | Infineon Technologies | MOSFET P-CH 20V 14.9A 8-SOIC Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 128nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 14.9A · Input Capacitance (Ciss) @ Vds: 5962pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC | Доп. информация Искать в поставщиках | ||
IPD250N06N3 G | Infineon Technologies | MOSFET N-CH 60V 28A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 28A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 1200pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 36W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IPP100N10S3-05 | Infineon Technologies | MOSFET N-CH 100V 100A T0220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 176nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 11570pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках | |
IPP034N03L G | Infineon Technologies | MOSFET N-CH 30V 80A TO-220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 51nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5300pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IPU78CN10N G | Infineon Technologies | MOSFET N-CH 100V 13A TO251-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 716pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 31W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IPP057N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 82nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 6600pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 115W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
IPP80N06S2-05 | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5110pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
IPD088N04L G | Infineon Technologies | MOSFET N-CH 40V 50A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2100pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IPB80N04S2-H4 | Infineon Technologies | MOSFET N-CH 40V 80A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 148nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IPI120N04S3-02 | Infineon Technologies | MOSFET N-CH 40V 120A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 14300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IPP100N06S2L-05 | Infineon Technologies | MOSFET N-CH 55V 100A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 230nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 5660pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
SPB80N06S2-08 | Infineon Technologies | MOSFET N-CH 55V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 96nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 215W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
SPB80N06S2L-06 | Infineon Technologies | MOSFET N-CH 55V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 69A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 150nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5050pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
IPP023N04N G | Infineon Technologies | MOSFET N-CH 40V 90A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 10000pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 167W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
IPBH6N03LA G | Infineon Technologies | MOSFET N-CH 25V 50A TO-263 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 19nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2390pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 71W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
IPP03N03LA | Infineon Technologies | MOSFET N-CH 25V 80A TO-220AB Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 57nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7027pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220AB | Доп. информация Искать в поставщиках | ||
IPD09N03LA G | Infineon Technologies | MOSFET N-CH 25V 50A DPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 13nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1642pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 63W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
IPP45N06S3-16 | Infineon Technologies | MOSFET N-CH 55V 45A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 23A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 57nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 2980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
BSS214NW L6327 | Infineon Technologies | MOSFET N-CH 20V 1.5A SOT-323 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 0.8nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 143pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-323 | от 0,00 | Доп. информация Искать в поставщиках | |
IPB049N06L3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 8400pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 115W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
BSL207SP L6327 | Infineon Technologies | MOSFET P-CH 20V 6A 6-TSOP Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 41 mOhm @ 6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1007pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IPD10N03LA | Infineon Technologies | MOSFET N-CH 25V 30A DPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 11nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1358pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках |
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