Дискретные полупроводники · MOSFET транзисторы (одиночные)

IPB16CN10N G — MOSFET N-CH 100V 53A TO263-3

Производитель	Infineon Technologies
Вредные вещества	RoHS Без свинца

Серия	OptiMOS™
Rds On (Max) @ Id, Vgs	16.5 mOhm @ 53A, 10V
Drain to Source Voltage (Vdss)	100V
Gate Charge (Qg) @ Vgs	48nC @ 10V
Current - Continuous Drain (Id) @ 25° C	53A
Input Capacitance (Ciss) @ Vds	3220pF @ 50V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	100W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)
Встречается под наим.	SP000096452

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IPI06CN10N G	Infineon Technologies	MOSFET N-CH 100V 100A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 139nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 9200pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	BSC090N03LSG	Infineon Technologies	MOSFET N-CH 30V 48A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 48A · Input Capacitance (Ciss) @ Vds: 1500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 32W · Mounting Type: Surface Mount · Package / Case: TDSON-8	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	SPD50N06S2L-13	Infineon Technologies	MOSFET N-CH 55V 50A DPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 69nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2300pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 136W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	BSO201SPT	Infineon Technologies	MOSFET P-CH 20V 14.9A 8-SOIC Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 128nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 14.9A · Input Capacitance (Ciss) @ Vds: 5962pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC		Доп. информация Искать в поставщиках
	IPD250N06N3 G	Infineon Technologies	MOSFET N-CH 60V 28A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 28A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 1200pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 36W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IPP100N10S3-05	Infineon Technologies	MOSFET N-CH 100V 100A T0220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 176nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 11570pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220-3	от 0,00	Доп. информация Искать в поставщиках
	IPP034N03L G	Infineon Technologies	MOSFET N-CH 30V 80A TO-220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 51nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5300pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Through Hole · Package / Case: TO-220-3	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPU78CN10N G	Infineon Technologies	MOSFET N-CH 100V 13A TO251-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 78 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 716pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 31W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IPP057N06N3 G	Infineon Technologies	MOSFET N-CH 60V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 82nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 6600pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 115W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	IPP80N06S2-05	Infineon Technologies	MOSFET N-CH 55V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5110pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	IPD088N04L G	Infineon Technologies	MOSFET N-CH 40V 50A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2100pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 47W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IPB80N04S2-H4	Infineon Technologies	MOSFET N-CH 40V 80A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 148nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IPI120N04S3-02	Infineon Technologies	MOSFET N-CH 40V 120A TO262-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 14300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IPP100N06S2L-05	Infineon Technologies	MOSFET N-CH 55V 100A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 230nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 5660pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	SPB80N06S2-08	Infineon Technologies	MOSFET N-CH 55V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 96nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 215W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	SPB80N06S2L-06	Infineon Technologies	MOSFET N-CH 55V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 69A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 150nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5050pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IPP023N04N G	Infineon Technologies	MOSFET N-CH 40V 90A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 10000pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 167W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00	Доп. информация Искать в поставщиках
	IPBH6N03LA G	Infineon Technologies	MOSFET N-CH 25V 50A TO-263 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 19nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2390pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 71W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IPP03N03LA	Infineon Technologies	MOSFET N-CH 25V 80A TO-220AB Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 57nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7027pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220AB		Доп. информация Искать в поставщиках
	IPD09N03LA G	Infineon Technologies	MOSFET N-CH 25V 50A DPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 13nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 1642pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 63W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IPP45N06S3-16	Infineon Technologies	MOSFET N-CH 55V 45A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 15.7 mOhm @ 23A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 57nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 2980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: TO-220	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	BSS214NW L6327	Infineon Technologies	MOSFET N-CH 20V 1.5A SOT-323 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 0.8nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 143pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-323	от 0,00	Доп. информация Искать в поставщиках
	IPB049N06L3 G	Infineon Technologies	MOSFET N-CH 60V 80A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 8400pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 115W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	BSL207SP L6327	Infineon Technologies	MOSFET P-CH 20V 6A 6-TSOP Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 41 mOhm @ 6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 1007pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 6-TSOP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IPD10N03LA	Infineon Technologies	MOSFET N-CH 25V 30A DPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 11nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1358pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках

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