IPD30N03S2L-07 — MOSFET N-CH 30V 30A TO252-3
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| BSO064N03S | Infineon Technologies | MOSFET N-CH 30V 12A DSO-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 28nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 3620pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.56W · Mounting Type: Surface Mount · Package / Case: DSO-8 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPD26N06S2L-35 | Infineon Technologies | MOSFET N-CH 55V 30A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 35 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 621pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSC035N04LS G | Infineon Technologies | MOSFET N-CH 40V 100A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 64nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 5100pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 69W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
 | SPB80N06S2L-H5 | Infineon Technologies | MOSFET N-CH 55V 80A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 190nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 6640pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IPD048N06L3 G | Infineon Technologies | MOSFET N-CH 60V 90A TO252-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 90A · Input Capacitance (Ciss) @ Vds: 8400pF @ 30V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 115W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPU04N03LA | Infineon Technologies | MOSFET N-CH 25V 50A IPAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 41nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 5199pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 115W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
| SPI80N08S2-07R | Infineon Technologies | MOSFET N-CH 75V 80A I2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 185nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5830pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
| IPB090N06N3 G | Infineon Technologies | MOSFET N-CH 60V 50A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 36nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2900pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 71W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| BSZ160N10NS3 G | Infineon Technologies | MOSFET N-CH 100V 40A TSDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 1700pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 63W · Mounting Type: Surface Mount · Package / Case: 8-TSDSON | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSO052N03S | Infineon Technologies | MOSFET N-CH 30V 14A DSO-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 43nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 5530pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.56W · Mounting Type: Surface Mount · Package / Case: DSO-8 | от 0,00 | Доп. информация Искать в поставщиках |
| IPBH6N03LA | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 19nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2390pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 71W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| BSC883N03MS G | Infineon Technologies | MOSFET N-CH 30V 98A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 98A · Input Capacitance (Ciss) @ Vds: 4300pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 57W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP80N06S2-H5 | Infineon Technologies | MOSFET N-CH 55V 80A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 155nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP100N04S3-03 | Infineon Technologies | MOSFET N-CH 40V 100A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 145nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 9600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 214W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках | |
| BSR302N L6327 | Infineon Technologies | MOSFET N-CH 30V 3.7A SC-59 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 23 mOhm @ 3.7A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.6nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 3.7A · Input Capacitance (Ciss) @ Vds: 750pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SC-59 | от 0,00 | Доп. информация Искать в поставщиках | |
| IPP100N06S2-05 | Infineon Technologies | MOSFET N-CH 55V 100A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 5110pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 | Доп. информация Искать в поставщиках | |
 | BSC120N03MSG | Infineon Technologies | MOSFET N-CH 30V 39A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 39A · Input Capacitance (Ciss) @ Vds: 1500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 28W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IPP093N06N3 G | Infineon Technologies | MOSFET N-CH 60V 50A TO220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 36nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2900pF @ 30V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 71W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 | Доп. информация Искать в поставщиках | |
| SPP80N06S2L-06 | Infineon Technologies | MOSFET N-CH 55V 80A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 69A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 150nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5050pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-220 | Доп. информация Искать в поставщиках | ||
| IPB80N04S2L-03 | Infineon Technologies | MOSFET N-CH 40V 80A TO263-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 213nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 6000pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| BSC019N04NS G | Infineon Technologies | MOSFET N-CH 40V 100A TDSON-8 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 1.9 mohm @ 50A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 108nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 8800pF @ 20V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: TDSON-8 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IPI45N06S3L-13 | Infineon Technologies | MOSFET N-CH 55V 45A TO-262 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 26A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 75nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 3600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IPP16CN10N G | Infineon Technologies | MOSFET N-CH 100V 53A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 53A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 53A · Input Capacitance (Ciss) @ Vds: 3220pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IPP03N03LB G | Infineon Technologies | MOSFET N-CH 30V 80A TO-220 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 55A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 59nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 7624pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220 | Доп. информация Искать в поставщиках | |
 | IPP114N03L G | Infineon Technologies | MOSFET N-CH 30V 30A TO-220-3 Серия: OptiMOS™ · Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 38W · Mounting Type: Through Hole · Package / Case: TO-220-3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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