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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 

IPI100N04S3-03 — MOSFET N-CH 40V 100A TO262-3

ПроизводительInfineon Technologies
Вредные веществаRoHS   Без свинца
СерияOptiMOS™
Rds On (Max) @ Id, Vgs2.8 mOhm @ 80A, 10V
Drain to Source Voltage (Vdss)40V
Gate Charge (Qg) @ Vgs145nC @ 10V
Current - Continuous Drain (Id) @ 25° C100A
Input Capacitance (Ciss) @ Vds9600pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max214W
Mounting TypeThrough Hole
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
Встречается под наим.SP000261223
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
IPD05N03LB GInfineon TechnologiesMOSFET N-CH 30V 90A DPAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 3200pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 94W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPD10N03LA GInfineon TechnologiesMOSFET N-CH 25V 30A DPAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1358pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 52W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SPD30N03S2L10TSPD30N03S2L10TInfineon TechnologiesMOSFET N-CH 30V 30A DPAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 41.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPP015N04N GInfineon TechnologiesMOSFET N-CH 40V 120A TO220-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 250nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 120A  ·  Input Capacitance (Ciss) @ Vds: 20000pF @ 20V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPB50CN10N GInfineon TechnologiesMOSFET N-CH 100V 20A TO263-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 50 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1090pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 44W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPI086N10N3 GInfineon TechnologiesMOSFET N-CH 100V 80A TO262-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 73A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 55nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3980pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IPI09N03LAInfineon TechnologiesMOSFET N-CH 25V 50A I2PAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 1642pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 63W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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IPDH4N03LAGIPDH4N03LAGInfineon TechnologiesMOSFET N-CH 25V 90A TO252-3-11
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 90A  ·  Input Capacitance (Ciss) @ Vds: 3200pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 94W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPSH6N03LB GInfineon TechnologiesMOSFET N-CH 30V 50A IPAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 2800pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 83W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
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IPF10N03LA GInfineon TechnologiesMOSFET N-CH 25V 30A DPAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1358pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 52W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SPP80N08S2L-07Infineon TechnologiesMOSFET N-CH 75V 80A TO-220
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 67A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 233nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 6820pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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SPB80N03S2L05TInfineon TechnologiesMOSFET N-CH 30V 80A D2PAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 55A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 89.7nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3320pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 167W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSC252N10NSF GInfineon TechnologiesMOSFET N-CH 100V 40A TDSON-8
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 25.2 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 78W  ·  Mounting Type: Surface Mount  ·  Package / Case: TDSON-8
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IPB100N04S3-03Infineon TechnologiesMOSFET N-CH 40V 100A TO263-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 145nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 9600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 214W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IPB160N04S2-03Infineon TechnologiesMOSFET N-CH 40V 160A TO263-7
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 160A  ·  Input Capacitance (Ciss) @ Vds: 5300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (7 leads + tab)
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IPU05N03LAInfineon TechnologiesMOSFET N-CH 25V 50A IPAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 25V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 3110pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 94W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IPD15N06S2L-64Infineon TechnologiesMOSFET N-CH 55V 19A TO252-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 64 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 19A  ·  Input Capacitance (Ciss) @ Vds: 354pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 47W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SPD14N06S2-80Infineon TechnologiesMOSFET N-CH 55V 17A DPAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 80 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IPP100N08S2L-07Infineon TechnologiesMOSFET N-CH 75V 100A TO220-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 75V  ·  Gate Charge (Qg) @ Vgs: 246nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 5400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPP05CN10N GIPP05CN10N GInfineon TechnologiesMOSFET N-CH 100V 100A TO-220
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 100A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 181nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 100A  ·  Input Capacitance (Ciss) @ Vds: 12000pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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IPB80N06S3-07IPB80N06S3-07Infineon TechnologiesMOSFET N-CH 55V 80A D2PAK
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 51A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 170nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 7768pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 135W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSL211SP L6327BSL211SP L6327Infineon TechnologiesMOSFET P-CH 20V 4.7A TSOP-6
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 12.4nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.7A  ·  Input Capacitance (Ciss) @ Vds: 654pF @ 15V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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BSS670S2L L6327Infineon TechnologiesMOSFET N-CH 55V 540MA SOT-23
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 650 mOhm @ 270mA, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 2.26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 540mA  ·  Input Capacitance (Ciss) @ Vds: 75pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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IPD30N06S2L-23Infineon TechnologiesMOSFET N-CH 55V 30A TO252-3
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 22A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1091pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 100W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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SPP80N06S2-H5Infineon TechnologiesMOSFET N-CH 55V 80A TO-220
Серия: OptiMOS™  ·  Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 155nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 5500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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