Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRF5803D2PBF — MOSFET P-CH 40V 3.4A 8-SOIC

Производитель	International Rectifier
Вредные вещества	RoHS Без свинца

Серия	FETKY™
Rds On (Max) @ Id, Vgs	112 mOhm @ 3.4A, 10V
Drain to Source Voltage (Vdss)	40V
Gate Charge (Qg) @ Vgs	37nC @ 10V
Current - Continuous Drain (Id) @ 25° C	3.4A
Input Capacitance (Ciss) @ Vds	1110pF @ 25V
FET Polarity	P-Channel
FET Feature	Diode (Isolated)
Power - Max	2W
Mounting Type	Surface Mount
Package / Case	8-SOIC (3.9mm Width)

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRF7521D1TRPBF	International Rectifier	MOSFET N-CH 20V 2.4A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 260pF @ 15V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: Micro8™	от 0,00	Доп. информация Искать в поставщиках
	IRF7421D1TRPBF	International Rectifier	MOSFET N-CH 30V 5.8A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.8A · Input Capacitance (Ciss) @ Vds: 510pF @ 25V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7807VD1TRPBF	International Rectifier	MOSFET N-CH 30V 8.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7534D1TRPBF	International Rectifier	MOSFET P-CH 20V 4.3A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 1066pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: Micro8™	от 0,00	Доп. информация Искать в поставщиках
	IRF5803D2TR	International Rectifier	MOSFET P-CH 40V 3.4A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.4A · Input Capacitance (Ciss) @ Vds: 1110pF @ 25V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRF7526D1TR	International Rectifier	MOSFET P-CH 30V 2A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 180pF @ 25V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: Micro8™		Доп. информация Искать в поставщиках
	IRF7807VD2PBF	International Rectifier	MOSFET N-CH 30V 8.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7534D1TR	International Rectifier	MOSFET P-CH 20V 4.3A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 1066pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: Micro8™	от 0,00	Доп. информация Искать в поставщиках
	IRL3103D2PBF	International Rectifier	MOSFET N-CH 30V 54A TO-220AB Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 54A · Input Capacitance (Ciss) @ Vds: 2300pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRL3103D1SPBF	International Rectifier	MOSFET N-CH 30V 64A D2PAK-5 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 43nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 64A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (5 leads + tab)		Доп. информация Искать в поставщиках
	IRF7353D1TR	International Rectifier	MOSFET N-CH 30V 6.5A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 650pF @ 25V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7353D1PBF	International Rectifier	MOSFET N-CH 30V 6.5A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 650pF @ 25V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7324D1TR	International Rectifier	MOSFET P-CH 20V 2.2A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.2A · Input Capacitance (Ciss) @ Vds: 260pF @ 15V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7526D1PBF	International Rectifier	MOSFET P-CH 30V 2A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 180pF @ 25V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: Micro8™	от 0,00	Доп. информация Искать в поставщиках
	IRL3103D2	International Rectifier	MOSFET N-CH 30V 54A TO-220AB Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 14 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 54A · Input Capacitance (Ciss) @ Vds: 2300pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)		Доп. информация Искать в поставщиках
	IRF7326D2TRPBF	International Rectifier	MOSFET P-CH 30V 3.6A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 440pF @ 25V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7807D2	International Rectifier	MOSFET N-CH 30V 8.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7807VD2	International Rectifier	MOSFET N-CH 30V 8.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRF5803D2	International Rectifier	MOSFET P-CH 40V 3.4A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.4A · Input Capacitance (Ciss) @ Vds: 1110pF @ 25V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRL3103D1S	International Rectifier	MOSFET N-CH 30V 64A D2PAK Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 14 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 43nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 64A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Доп. информация Искать в поставщиках
	IRF5803D2TRPBF	International Rectifier	MOSFET P-CH 40V 3.4A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.4A · Input Capacitance (Ciss) @ Vds: 1110pF @ 25V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: SO-8	от 0,00	Доп. информация Искать в поставщиках
	IRF7321D2TR	International Rectifier	MOSFET P-CH 30V 4.7A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.7A · Input Capacitance (Ciss) @ Vds: 710pF @ 25V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRF7524D1TR	International Rectifier	MOSFET P-CH 20V 1.7A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8.2nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 240pF @ 15V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: Micro8™		Доп. информация Искать в поставщиках
	IRF7807D2TRPBF	International Rectifier	MOSFET N-CH 30V 8.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7534D1PBF	International Rectifier	MOSFET P-CH 20V 4.3A MICRO-8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 1066pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: Micro8™	от 0,00	Доп. информация Искать в поставщиках

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