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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
IRLR3802PBF | International Rectifier | MOSFET N-CH 12V 84A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 41nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 84A · Input Capacitance (Ciss) @ Vds: 2490pF @ 6V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 88W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFZ48V | International Rectifier | MOSFET N-CH 60V 72A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 72A · Input Capacitance (Ciss) @ Vds: 1985pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
IRLR7833TRLPBF | International Rectifier | MOSFET N-CH 30V 140A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 140A · Input Capacitance (Ciss) @ Vds: 4010pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR3711PBF | International Rectifier | MOSFET N-CH 20V 100A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 2980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFU3711 | International Rectifier | MOSFET N-CH 20V 100A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 2980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
IRF7707 | International Rectifier | MOSFET P-CH 20V 7A 8-TSSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 47nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 2361pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-TSSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF7701TRPBF | International Rectifier | MOSFET P-CH 12V 10A 8-TSSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 100nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 5050pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-TSSOP | от 0,00 | Доп. информация Искать в поставщиках | |
IRLR7843CTRPBF | International Rectifier | MOSFET N-CH 30V 161A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 161A · Input Capacitance (Ciss) @ Vds: 4380pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRF7406PBF | International Rectifier | MOSFET P-CH 30V 5.8A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 59nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.8A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF7607 | International Rectifier | MOSFET N-CH 20V 6.5A MICRO-8 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 22nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 1310pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: Micro8™ | Доп. информация Искать в поставщиках | ||
IRLMS1503TR | International Rectifier | MOSFET N-CH 30V 3.2A 6-TSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 9.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 210pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.7W · Mounting Type: Surface Mount · Package / Case: Micro6™(TSOP-6) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR024NTRL | International Rectifier | MOSFET N-CH 55V 17A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRF7604TR | International Rectifier | MOSFET P-CH 20V 3.6A MICRO8 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 590pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: Micro8™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF1407SPBF | International Rectifier | MOSFET N-CH 75V 100A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 78A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 250nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 5600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRL520NSTRR | International Rectifier | MOSFET N-CH 100V 10A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 20nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 440pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
IRF7465TRPBF | International Rectifier | MOSFET N-CH 150V 1.9A 8SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.14A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.9A · Input Capacitance (Ciss) @ Vds: 330pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRLR2705TR | International Rectifier | MOSFET N-CH 55V 28A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 25nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 880pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFS17N20DTRRP | International Rectifier | MOSFET N-CH 200V 16A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF9Z24NPBF | International Rectifier | MOSFET P-CH 55V 12A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRL3716SPBF | International Rectifier | MOSFET N-CH 20V 180A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 79nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 180A · Input Capacitance (Ciss) @ Vds: 5090pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 210W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF6712STRPBF | International Rectifier | MOSFET N-CH 25V 17A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 18nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 1570pF @ 13V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.2W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric SQ | от 0,00 | Доп. информация Искать в поставщиках | |
IRLR7807ZTR | International Rectifier | MOSFET N-CH 30V 43A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 43A · Input Capacitance (Ciss) @ Vds: 780pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
IRF7456TRPBF | International Rectifier | MOSFET N-CH 20V 16A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 62nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 3640pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFS59N10DTRR | International Rectifier | MOSFET N-CH 100V 59A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 114nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 59A · Input Capacitance (Ciss) @ Vds: 2450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR540ZPBF | International Rectifier | MOSFET N-CH 100V 35A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 28.5 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 59nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1690pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 91W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
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