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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)
 
IRF730STRLPBF

IRF730STRLPBF — MOSFET N-CH 400V 5.5A D2PAK

ПроизводительVishay/Siliconix
Вредные веществаRoHS   Без свинца
Rds On (Max) @ Id, Vgs1 Ohm @ 3.3A, 10V
Drain to Source Voltage (Vdss)400V
Gate Charge (Qg) @ Vgs38nC @ 10V
Current - Continuous Drain (Id) @ 25° C5.5A
Input Capacitance (Ciss) @ Vds700pF @ 25V
FET PolarityN-Channel
FET FeatureStandard
Power - Max3.1W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
SI2333CDS-T1-E3SI2333CDS-T1-E3Vishay/SiliconixMOSFET P-CH 12V 7.1A SOT23-3
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.1A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 7.1A  ·  Input Capacitance (Ciss) @ Vds: 1225pF @ 6V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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IRFP354PBFIRFP354PBFVishay/SiliconixMOSFET N-CH 450V 14A TO-247AC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 450V  ·  Gate Charge (Qg) @ Vgs: 160nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFR224TRPBFIRFR224TRPBFVishay/SiliconixMOSFET N-CH 250V 3.8A DPAK
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.8A  ·  Input Capacitance (Ciss) @ Vds: 260pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRL530SIRL530SVishay/SiliconixMOSFET N-CH 100V 15A D2PAK
Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 930pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFDC20IRFDC20Vishay/SiliconixMOSFET N-CH 600V 320MA 4-DIP
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 190mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 320mA  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1W  ·  Mounting Type: Through Hole  ·  Package / Case: 4-DIP, HVMDIP
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IRF730LCVishay/SiliconixMOSFET N-CH 400V 5.5A TO-220AB
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 5.5A  ·  Input Capacitance (Ciss) @ Vds: 700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRFP360LCIRFP360LCVishay/SiliconixMOSFET N-CH 400V 23A TO-247AC
Rds On (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 23A  ·  Input Capacitance (Ciss) @ Vds: 3400pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 280W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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SI7110DN-T1-GE3SI7110DN-T1-GE3Vishay/SiliconixMOSFET N-CH 20V 13.5A 1212-8
Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 21.1A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 13.5A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® 1212-8
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IRL630SIRL630SVishay/SiliconixMOSFET N-CH 200V 9A D2PAK
Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFIBC40GLCPBFIRFIBC40GLCPBFVishay/SiliconixMOSFET N-CH 600V 3.5A TO220FP
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.1A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 39nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.5A  ·  Input Capacitance (Ciss) @ Vds: 1100pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFRC20PBFVishay/SiliconixMOSFET N-CH 600V 2A DPAK
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFP450PBFIRFP450PBFVishay/SiliconixMOSFET N-CH 500V 14A TO-247AC
Rds On (Max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 150nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 2600pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 190W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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IRFBC30ASTRLPBFIRFBC30ASTRLPBFVishay/SiliconixMOSFET N-CH 600V 3.6A D2PAK
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  Input Capacitance (Ciss) @ Vds: 510pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 74W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFI840GPBFIRFI840GPBFVishay/SiliconixMOSFET N-CH 500V 4.6A TO220FP
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 850 mOhm @ 2.8A, 10V  ·  Drain to Source Voltage (Vdss): 500V  ·  Gate Charge (Qg) @ Vgs: 67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.6A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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IRFBE30STRRIRFBE30STRRVishay/SiliconixMOSFET N-CH 800V 4.1A D2PAK
Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Gate Charge (Qg) @ Vgs: 78nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 4.1A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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SIA417DJ-T1-GE3SIA417DJ-T1-GE3Vishay/SiliconixMOSFET P-CH 8V 12A SC70-6
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V  ·  Drain to Source Voltage (Vdss): 8V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 4V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 19W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SC-70-6
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BS250KL-TR1-E3BS250KL-TR1-E3Vishay/SiliconixMOSFET P-CH 60V 270MA TO92-18RM
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 3nC @ 15V  ·  Current - Continuous Drain (Id) @ 25° C: 270mA  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 800mW  ·  Mounting Type: Through Hole  ·  Package / Case: TO-18-3, TO-92-18RM
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SI7898DP-T1-E3SI7898DP-T1-E3Vishay/SiliconixMOSFET N-CH 150V 3A PPAK 8SOIC
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3A  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.9W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK® SO-8
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SI7308DN-T1-E3SI7308DN-T1-E3Vishay/SiliconixMOSFET N-CH 60V 6A 1212-8
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.4A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 665pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 19.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: PowerPAK 1212-8
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IRC634IRC634Vishay/SiliconixMOSFET N-CH 250V 8.1A TO-220-5
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.9A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 41nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.1A  ·  Input Capacitance (Ciss) @ Vds: 770pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Current Sensing  ·  Power - Max: 74W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-5 (Straight Leads)
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SI3495DV-T1-E3SI3495DV-T1-E3Vishay/SiliconixMOSFET P-CH 20V 5.3A 6-TSOP
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 5.3A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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SI4686DY-T1-E3SI4686DY-T1-E3Vishay/SiliconixMOSFET N-CH 30V 18.2A 8-SOIC
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18.2A  ·  Input Capacitance (Ciss) @ Vds: 1220pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 5.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRFI9Z24GPBFIRFI9Z24GPBFVishay/SiliconixMOSFET P-CH 60V 8.5A TO220FP
Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.1A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 19nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.5A  ·  Input Capacitance (Ciss) @ Vds: 570pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 37W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
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SUM50N06-16L-E3SUM50N06-16L-E3Vishay/SiliconixMOSFET N-CH 60V 50A D2PAK
Серия: TrenchFET®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 40nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 1325pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.7W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFBF20IRFBF20Vishay/SiliconixMOSFET N-CH 900V 1.7A TO-220AB
Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 900V  ·  Gate Charge (Qg) @ Vgs: 38nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 490pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 54W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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