Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRF7807VD1 — MOSFET N-CH 30V 8.3A 8-SOIC

Производитель	International Rectifier

Серия	FETKY™
Rds On (Max) @ Id, Vgs	25 mOhm @ 7A, 4.5V
Drain to Source Voltage (Vdss)	30V
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C	8.3A
FET Polarity	N-Channel
FET Feature	Diode (Isolated)
Power - Max	2.5W
Mounting Type	Surface Mount
Package / Case	8-SOIC (3.9mm Width)
Встречается под наим.	*IRF7807VD1

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRF7353D1TRPBF	International Rectifier	MOSFET N-CH 30V 6.5A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 650pF @ 25V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7523D1PBF	International Rectifier	MOSFET N-CH 30V 2.7A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.7A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 210pF @ 25V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: Micro8™	от 0,00	Доп. информация Искать в поставщиках
	IRF7422D2TR	International Rectifier	MOSFET P-CH 20V 4.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 22nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 610pF @ 15V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRF7422D2	International Rectifier	MOSFET P-CH 20V 4.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 22nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 610pF @ 15V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7521D1PBF	International Rectifier	MOSFET N-CH 20V 2.4A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 260pF @ 15V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: Micro8™	от 0,00	Доп. информация Искать в поставщиках
	IRF7353D2PBF	International Rectifier	MOSFET N-CH 30V 6.5A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 650pF @ 25V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7321D2PBF	International Rectifier	MOSFET P-CH 30V 4.7A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.7A · Input Capacitance (Ciss) @ Vds: 710pF @ 25V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7524D1PBF	International Rectifier	MOSFET P-CH 20V 1.7A MICRO-8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8.2nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 240pF @ 15V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: Micro8™	от 0,00	Доп. информация Искать в поставщиках
	IRF7342D2PBF	International Rectifier	MOSFET P-CH 55V 3.4A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.4A · Input Capacitance (Ciss) @ Vds: 690pF @ 25V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7324D1	International Rectifier	MOSFET P-CH 20V 2.2A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.2A · Input Capacitance (Ciss) @ Vds: 260pF @ 15V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRF7322D1	International Rectifier	MOSFET P-CH 20V 5.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 29nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 780pF @ 15V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRF7326D2	International Rectifier	MOSFET P-CH 30V 3.6A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 440pF @ 25V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRF7521D1	International Rectifier	MOSFET N-CH 20V 2.4A MICRO-8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 260pF @ 15V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: Micro8™		Доп. информация Искать в поставщиках
	IRF7322D1PBF	International Rectifier	MOSFET P-CH 20V 5.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 29nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 780pF @ 15V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7353D2TRPBF	International Rectifier	MOSFET N-CH 30V 6.5A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 650pF @ 25V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7807VD1TR	International Rectifier	MOSFET N-CH 30V 8.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках
	IRF7353D2TR	International Rectifier	MOSFET N-CH 30V 6.5A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 650pF @ 25V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7807VD1PBF	International Rectifier	MOSFET N-CH 30V 8.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7322D1TR	International Rectifier	MOSFET P-CH 20V 5.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 29nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 780pF @ 15V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7521D1TR	International Rectifier	MOSFET N-CH 20V 2.4A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 260pF @ 15V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: Micro8™		Доп. информация Искать в поставщиках
	IRF7521D1TRPBF	International Rectifier	MOSFET N-CH 20V 2.4A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 260pF @ 15V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: Micro8™	от 0,00	Доп. информация Искать в поставщиках
	IRF7421D1TRPBF	International Rectifier	MOSFET N-CH 30V 5.8A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.8A · Input Capacitance (Ciss) @ Vds: 510pF @ 25V · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7807VD1TRPBF	International Rectifier	MOSFET N-CH 30V 8.3A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 8.3A · FET Polarity: N-Channel · FET Feature: Diode (Isolated) · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRF7534D1TRPBF	International Rectifier	MOSFET P-CH 20V 4.3A MICRO8 Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 1066pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 1.25W · Mounting Type: Surface Mount · Package / Case: Micro8™	от 0,00	Доп. информация Искать в поставщиках
	IRF5803D2TR	International Rectifier	MOSFET P-CH 40V 3.4A 8-SOIC Серия: FETKY™ · Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.4A · Input Capacitance (Ciss) @ Vds: 1110pF @ 25V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)		Доп. информация Искать в поставщиках

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