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Дискретные полупроводники  ·  MOSFET транзисторы (одиночные)

 
IRF7831TRPBF

- Габаритный чертеж

IRF7831TRPBF — MOSFET N-CH 30V 21A 8-SOIC

ПроизводительInternational Rectifier
Вредные веществаRoHS   Без свинца
СерияHEXFET®
Rds On (Max) @ Id, Vgs3.6 mOhm @ 20A, 10V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs60nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C21A
Input Capacitance (Ciss) @ Vds6240pF @ 15V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max2.5W
Mounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)
Встречается под наим.IRF7831PBFDKR
Аналогичные по характеристикам
ФотоНаименованиеПроизводительТех. параметрыЦены (руб.)Купить
IRF3710ZSTRRPBFIRF3710ZSTRRPBFInternational RectifierMOSFET N-CH 100V 59A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 59A  ·  Input Capacitance (Ciss) @ Vds: 2900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF5305SIRF5305SInternational RectifierMOSFET P-CH 55V 31A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 63nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 31A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF7233TRPBFIRF7233TRPBFInternational RectifierMOSFET P-CH 12V 9.5A 8-SOIC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.5A, 4.5V  ·  Drain to Source Voltage (Vdss): 12V  ·  Gate Charge (Qg) @ Vgs: 74nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  Input Capacitance (Ciss) @ Vds: 6000pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOIC (3.9mm Width)
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IRFR12N25DIRFR12N25DInternational RectifierMOSFET N-CH 250V 14A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 35nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 810pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 144W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRL1404ZLPBFInternational RectifierMOSFET N-CH 40V 75A TO-262
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 75A  ·  Input Capacitance (Ciss) @ Vds: 5080pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 200W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262
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IRFS4310IRFS4310International RectifierMOSFET N-CH 100V 140A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 250nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 140A  ·  Input Capacitance (Ciss) @ Vds: 7670pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 330W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRLU3715ZPBFIRLU3715ZPBFInternational RectifierMOSFET N-CH 20V 49A I-PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 810pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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IRFZ24NSPBFIRFZ24NSPBFInternational RectifierMOSFET N-CH 55V 17A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 20nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 17A  ·  Input Capacitance (Ciss) @ Vds: 370pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF3710ZSTRLPBFInternational RectifierMOSFET N-CH 100V 59A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 59A  ·  Input Capacitance (Ciss) @ Vds: 2900pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 160W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRF1010NSIRF1010NSInternational RectifierMOSFET N-CH 55V 85A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 120nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 85A  ·  Input Capacitance (Ciss) @ Vds: 3210pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 180W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFZ44NPBFIRFZ44NPBFInternational RectifierMOSFET N-CH 55V 49A TO-220AB
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 63nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 49A  ·  Input Capacitance (Ciss) @ Vds: 1470pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 94W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3 (Straight Leads)
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IRL2203NSTRRIRL2203NSTRRInternational RectifierMOSFET N-CH 30V 116A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 116A  ·  Input Capacitance (Ciss) @ Vds: 3290pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFR9N20DTRIRFR9N20DTRInternational RectifierMOSFET N-CH 200V 9.4A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.6A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 9.4A  ·  Input Capacitance (Ciss) @ Vds: 560pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 86W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRF1404LIRF1404LInternational RectifierMOSFET N-CH 40V 162A TO-262
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 200nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 162A  ·  Input Capacitance (Ciss) @ Vds: 7360pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.8W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262-3 (Straight Leads)
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IRF3711SIRF3711SInternational RectifierMOSFET N-CH 20V 110A D2PAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 44nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 110A  ·  Input Capacitance (Ciss) @ Vds: 2980pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 3.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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IRFSL3004PBFIRFSL3004PBFInternational RectifierMOSFET N-CH 40V 195A TO262
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 240nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 195A  ·  Input Capacitance (Ciss) @ Vds: 9200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 380W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262
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IRLML6402TRIRLML6402TRInternational RectifierMOSFET P-CH 20V 3.7A SOT-23
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.7A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 3.7A  ·  Input Capacitance (Ciss) @ Vds: 633pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.3W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
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IRLR2905TRPBFIRLR2905TRPBFInternational RectifierMOSFET N-CH 55V 42A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 42A  ·  Input Capacitance (Ciss) @ Vds: 1700pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 110W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRF6722STR1PBFIRF6722STR1PBFInternational RectifierMOSFET N-CH 30V 13A DIRECTFET
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 13A  ·  Input Capacitance (Ciss) @ Vds: 1320pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.2W  ·  Mounting Type: Surface Mount  ·  Package / Case: DirectFET™ Isometric ST
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IRF6727MTR1PBFIRF6727MTR1PBFInternational RectifierMOSFET N-CH 30V 32A DIRECTFET
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 74nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 32A  ·  Input Capacitance (Ciss) @ Vds: 6190pF @ 15V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: DirectFET™ Isometric MX
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IRFR13N15DTRPBFInternational RectifierMOSFET N-CH 150V 14A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 180 mOhm @ 8.3A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 29nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 620pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 86W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFR5505CPBFInternational RectifierMOSFET P-CH 55V 18A DPAK
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 650pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 57W  ·  Mounting Type: Surface Mount  ·  Package / Case: DPak, TO-252 (2 leads+tab), SC-63
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IRFP4229PBFInternational RectifierMOSFET N-CH 250V 44A TO-247AC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 46 mOhm @ 26A, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 110nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 44A  ·  Input Capacitance (Ciss) @ Vds: 4560pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 310W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247AC
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IRFSL3806PBFIRFSL3806PBFInternational RectifierMOSFET N-CH 60V 43A TO-262
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 43A  ·  Input Capacitance (Ciss) @ Vds: 1150pF @ 50V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 71W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-262
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IRFP90N20DPBFIRFP90N20DPBFInternational RectifierMOSFET N-CH 200V 94A TO-247AC
Серия: HEXFET®  ·  Rds On (Max) @ Id, Vgs: 23 mOhm @ 56A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 270nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 94A  ·  Input Capacitance (Ciss) @ Vds: 6040pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 580W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-247-3 (Straight Leads), TO-247AC
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