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IRF9530 — MOSFET P-CH 100V 12A TO-220AB
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SI2333CDS-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 7.1A SOT23-3 Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.1A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7.1A · Input Capacitance (Ciss) @ Vds: 1225pF @ 6V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFP354PBF | Vishay/Siliconix | MOSFET N-CH 450V 14A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 450V · Gate Charge (Qg) @ Vgs: 160nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 2700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | Доп. информация Искать в поставщиках | |
 | IRL530S | Vishay/Siliconix | MOSFET N-CH 100V 15A D2PAK Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 28nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 930pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFDC20 | Vishay/Siliconix | MOSFET N-CH 600V 320MA 4-DIP Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 190mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 320mA · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP | от 0,00 | Доп. информация Искать в поставщиках |
 | SI7110DN-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 20V 13.5A 1212-8 Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 21.1A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 21nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRL630S | Vishay/Siliconix | MOSFET N-CH 200V 9A D2PAK Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFBE30STRR | Vishay/Siliconix | MOSFET N-CH 800V 4.1A D2PAK Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V · Drain to Source Voltage (Vdss): 800V · Gate Charge (Qg) @ Vgs: 78nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.1A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SIA417DJ-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 8V 12A SC70-6 Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 32nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1600pF @ 4V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 19W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | BS250KL-TR1-E3 | Vishay/Siliconix | MOSFET P-CH 60V 270MA TO92-18RM Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 3nC @ 15V · Current - Continuous Drain (Id) @ 25° C: 270mA · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 800mW · Mounting Type: Through Hole · Package / Case: TO-18-3, TO-92-18RM | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7898DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 150V 3A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 21nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFI9Z24GPBF | Vishay/Siliconix | MOSFET P-CH 60V 8.5A TO220FP Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.5A · Input Capacitance (Ciss) @ Vds: 570pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 37W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI3433BDV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 4.3A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.1W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFR9214TRR | Vishay/Siliconix | MOSFET P-CH 250V 2.7A DPAK Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 220pf @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
 | SI7434DP-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 250V 2.3A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 155 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.3A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF730S | Vishay/Siliconix | MOSFET N-CH 400V 5.5A D2PAK Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF9Z34STRR | Vishay/Siliconix | MOSFET P-CH 60V 18A D2PAK Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | SI3460BDV-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 8A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 24nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 860pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.5W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFPF30 | Vishay/Siliconix | MOSFET N-CH 900V 3.6A TO-247AC Rds On (Max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 78nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках |
 | SI1411DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 150V 420MA SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 6.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 420mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF630L | Vishay/Siliconix | MOSFET N-CH 200V 9A TO-262 Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | SI5406DC-T1-E3 | Vishay/Siliconix | MOSFET N-CH 12V 6.9A 1206-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.9A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.9A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 1206-8 ChipFET™ | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFBA22N50A | Vishay/Siliconix | MOSFET N-CH 500V 24A SUPER-220 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 230 mOhm @ 13.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 115nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 3400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 340W · Mounting Type: Through Hole · Package / Case: Super-220™ | Доп. информация Искать в поставщиках | |
| IRFL23N20D | Vishay/Siliconix | MOSFET N-CH 200V 23A D2PAK Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 23A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
 | IRC540PBF | Vishay/Siliconix | MOSFET N-CH 100V 28A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 69nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | Доп. информация Искать в поставщиках | |
| IRFZ24STRR | Vishay/Siliconix | MOSFET N-CH 60V 17A D2PAK Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 640pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
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