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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
SI4896DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 80V 6.7A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.56W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SIR476DP-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 25V 60A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 6150pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SI1065X-T1-E3 | Vishay/Siliconix | MOSFET P-CH 12V 1.18A SOT563F Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 1.18A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 10.8nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.18A · Input Capacitance (Ciss) @ Vds: 480pF @ 6V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SIE830DF-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 50A 10-POLARPAK Серия: WFET® · Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 115nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 5500pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 104W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (S) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SIB411DK-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 9A SC75-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 15nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 470pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 13W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-75-6L | Доп. информация Искать в поставщиках | ||
SIA456DJ-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 200V 2.6A SC70-6 Rds On (Max) @ Id, Vgs: 1.38 Ohm @ 750mA, 4.5V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 14.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.6A · Input Capacitance (Ciss) @ Vds: 350pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 19W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFBC30AL | Vishay/Siliconix | MOSFET N-CH 600V 3.6A TO-262 Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 510pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF740S | Vishay/Siliconix | MOSFET N-CH 400V 10A D2PAK Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
SI1303EDL-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 670MA SOT323-3 Rds On (Max) @ Id, Vgs: 430 mOhm @ 1A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 670mA · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 290mW · Mounting Type: Surface Mount · Package / Case: SC-70-3, SOT-323-3 | Доп. информация Искать в поставщиках | ||
IRFR9120 | Vishay/Siliconix | MOSFET P-CH 100V 5.6A DPAK Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.6A · Input Capacitance (Ciss) @ Vds: 390pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SIA432DJ-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 30V 12A SC70-6 Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 800pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 19.2W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SIE808DF-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 60A 10-POLARPAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 25A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 155nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 8800pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: 10-PolarPAK® (L) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SIB417DK-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 8V 9A SC75-6 Rds On (Max) @ Id, Vgs: 52 mOhm @ 5.6A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 12.75nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 675pF @ 4V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 13W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-75-6L | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFR9024TR | Vishay/Siliconix | MOSFET P-CH 60V 8.8A DPAK Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.8A · Input Capacitance (Ciss) @ Vds: 570pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
SI4632DY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 25V 40A 8-SOIC Серия: WFET® · Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 161nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 11175pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 7.8W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SI7411DN-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 20V 7.5A 1212-8 Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 41nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7.5A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SI1012X-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 500MA SC89-3 Rds On (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 0.75nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 500mA · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250mW · Mounting Type: Surface Mount · Package / Case: SC-89-3 | от 0,00 | Доп. информация Искать в поставщиках | |
IRLR120TRLPBF | Vishay/Siliconix | MOSFET N-CH 100V 7.7A DPAK Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 12nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 7.7A · Input Capacitance (Ciss) @ Vds: 490pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRF840LCS | Vishay/Siliconix | MOSFET N-CH 500V 8A D2PAK Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
SI7113DN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 100V 13.2A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 134 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 55nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13.2A · Input Capacitance (Ciss) @ Vds: 1480pF @ 50V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SUM55P06-19L-E3 | Vishay/Siliconix | MOSFET P-CH 60V 55A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 19 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 115nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 3500pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SI7489DP-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 100V 28A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 41 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 160nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 4600pF @ 50V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 83W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SI4800BDY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 6.5A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6.5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.3W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFD9210 | Vishay/Siliconix | MOSFET P-CH 200V 400MA 4-DIP Rds On (Max) @ Id, Vgs: 3 Ohm @ 240mA, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 8.9nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 400mA · Input Capacitance (Ciss) @ Vds: 170pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP | от 0,00 | Доп. информация Искать в поставщиках | |
SUM110N06-3M4L-E3 | Vishay/Siliconix | MOSFET N-CH 60V 110A D2PAK Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 300nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 12900pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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