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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
IRFP054PBF | Vishay/Siliconix | MOSFET N-CH 60V 70A TO-247AC Rds On (Max) @ Id, Vgs: 14 mOhm @ 54A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 160nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 230W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFU014 | Vishay/Siliconix | MOSFET N-CH 60V 7.7A I-PAK Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.7A · Input Capacitance (Ciss) @ Vds: 300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFI710G | Vishay/Siliconix | MOSFET N-CH 400V 1.6A TO220FP Серия: HEXFET® · Drain to Source Voltage (Vdss): 400V · Current - Continuous Drain (Id) @ 25° C: 1.6A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках | |
IRC830 | Vishay/Siliconix | MOSFET N-CH 500V 4.5A TO-220-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.5A · Input Capacitance (Ciss) @ Vds: 610pF @ 25V · FET Polarity: N-Channel · FET Feature: Current Sensing · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-5 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF9Z34STRLPBF | Vishay/Siliconix | MOSFET P-CH 60V 18A D2PAK Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR110 | Vishay/Siliconix | MOSFET N-CH 100V 4.3A DPAK Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 8.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 180pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFPC30 | Vishay/Siliconix | MOSFET N-CH 600V 4.3A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 31nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 630pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | Доп. информация Искать в поставщиках | ||
IRFRC20TRLPBF | Vishay/Siliconix | MOSFET N-CH 600V 2A DPAK Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFI634G | Vishay/Siliconix | MOSFET N-CH 250V 5.6A TO220FP Rds On (Max) @ Id, Vgs: 450 mOhm @ 3.4A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.6A · Input Capacitance (Ciss) @ Vds: 770pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 35W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках | |
IRFU1N60APBF | Vishay/Siliconix | MOSFET N-CH 600V 1.4A I-PAK Rds On (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.4A · Input Capacitance (Ciss) @ Vds: 229pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 36W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRL620SPBF | Vishay/Siliconix | MOSFET N-CH 200V 5.2A D2PAK Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 16nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 5.2A · Input Capacitance (Ciss) @ Vds: 360pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF9Z34PBF | Vishay/Siliconix | MOSFET P-CH 60V 18A TO-220AB Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SI1067X-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 20V 1.06A SC89-6 Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.06A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 9.3nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.06A · Input Capacitance (Ciss) @ Vds: 375pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFD9110 | Vishay/Siliconix | MOSFET P-CH 100V 700MA 4-DIP Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 420mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 8.7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 700mA · Input Capacitance (Ciss) @ Vds: 200pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 1.3W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP | от 0,00 | Доп. информация Искать в поставщиках | |
IRFIBC20GPBF | Vishay/Siliconix | MOSFET N-CH 600V 1.7A TO220FP Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 18nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SI3469DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 5A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.7A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SI4874BDY-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 12A 8-SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 3230pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.6W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFBC40STRL | Vishay/Siliconix | MOSFET N-CH 600V 6.2A D2PAK Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.2A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR420TRPBF | Vishay/Siliconix | MOSFET N-CH 500V 2.4A DPAK Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 360pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF740 | Vishay/Siliconix | MOSFET N-CH 400V 10A TO-220AB Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
SI1058X-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 1.3A SOT563F Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 91 mOhm @ 1.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 5.9nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.3A · Input Capacitance (Ciss) @ Vds: 380pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 236mW · Mounting Type: Surface Mount · Package / Case: SC-89-6, SOT-563F, SOT-666 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF9510S | Vishay/Siliconix | MOSFET P-CH 100V 4A D2PAK Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 8.7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4A · Input Capacitance (Ciss) @ Vds: 200pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
SI7459DP-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 13A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 170nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFR110TRRPBF | Vishay/Siliconix | MOSFET N-CH 100V 4.3A DPAK Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 8.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 180pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFIB6N60APBF | Vishay/Siliconix | MOSFET N-CH 600V 5.5A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 49nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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