Дискретные полупроводники · MOSFET транзисторы (одиночные)

IRFB3507 — MOSFET N-CH 75V 97A TO-220AB

Производитель	International Rectifier

Серия	HEXFET®
Rds On (Max) @ Id, Vgs	8.8 mOhm @ 58A, 10V
Drain to Source Voltage (Vdss)	75V
Gate Charge (Qg) @ Vgs	130nC @ 10V
Current - Continuous Drain (Id) @ 25° C	97A
Input Capacitance (Ciss) @ Vds	3540pF @ 50V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	190W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Встречается под наим.	*IRFB3507

Аналогичные по характеристикам

Фото	Наименование	Производитель	Тех. параметры	Цены (руб.)	Купить
	IRLR7807ZTR	International Rectifier	MOSFET N-CH 30V 43A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 11nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 43A · Input Capacitance (Ciss) @ Vds: 780pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IRLR3802PBF	International Rectifier	MOSFET N-CH 12V 84A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 41nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 84A · Input Capacitance (Ciss) @ Vds: 2490pF @ 6V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 88W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFZ48V	International Rectifier	MOSFET N-CH 60V 72A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 72A · Input Capacitance (Ciss) @ Vds: 1985pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads)	от 0,00	Доп. информация Искать в поставщиках
	IRLR7833TRLPBF	International Rectifier	MOSFET N-CH 30V 140A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 140A · Input Capacitance (Ciss) @ Vds: 4010pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF7456TRPBF	International Rectifier	MOSFET N-CH 20V 16A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 62nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 3640pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFR3711PBF	International Rectifier	MOSFET N-CH 20V 100A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 2980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFS59N10DTRR	International Rectifier	MOSFET N-CH 100V 59A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 114nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 59A · Input Capacitance (Ciss) @ Vds: 2450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRFU3711	International Rectifier	MOSFET N-CH 20V 100A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 2980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)		Доп. информация Искать в поставщиках
	IRF7707	International Rectifier	MOSFET P-CH 20V 7A 8-TSSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 47nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 2361pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-TSSOP	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFR540ZPBF	International Rectifier	MOSFET N-CH 100V 35A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 28.5 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 59nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1690pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 91W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRL2910LPBF	International Rectifier	MOSFET N-CH 100V 55A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 29A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 140nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 3700pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads)	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFR3303	International Rectifier	MOSFET N-CH 30V 33A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 31 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 33A · Input Capacitance (Ciss) @ Vds: 750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 57W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Доп. информация Искать в поставщиках
	IRF7701TRPBF	International Rectifier	MOSFET P-CH 12V 10A 8-TSSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 100nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 5050pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-TSSOP	от 0,00	Доп. информация Искать в поставщиках
	IRFR5305TRPBF	International Rectifier	MOSFET P-CH 55V 31A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRLR7843CTRPBF	International Rectifier	MOSFET N-CH 30V 161A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 161A · Input Capacitance (Ciss) @ Vds: 4380pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF7406PBF	International Rectifier	MOSFET P-CH 30V 5.8A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 59nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.8A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7204PBF	International Rectifier	MOSFET P-CH 20V 5.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 860pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width)	от 0,00	Доп. информация Искать в поставщиках
	IRF7240TRPBF	International Rectifier	MOSFET P-CH 40V 10.5A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 10.5A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.5A · Input Capacitance (Ciss) @ Vds: 9250pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: SO-8	от 0,00	Доп. информация Искать в поставщиках
	IRF7607	International Rectifier	MOSFET N-CH 20V 6.5A MICRO-8 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 22nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 6.5A · Input Capacitance (Ciss) @ Vds: 1310pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: Micro8™		Доп. информация Искать в поставщиках
	IRLMS1503TR	International Rectifier	MOSFET N-CH 30V 3.2A 6-TSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 9.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.2A · Input Capacitance (Ciss) @ Vds: 210pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.7W · Mounting Type: Surface Mount · Package / Case: Micro6™(TSOP-6)	от 0,00	Доп. информация Искать в поставщиках
	IRFR024NTRL	International Rectifier	MOSFET N-CH 55V 17A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRFR5410TRLPBF	International Rectifier	MOSFET P-CH 100V 13A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 760pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 66W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	от 0,00	Доп. информация Искать в поставщиках
	IRF7604TR	International Rectifier	MOSFET P-CH 20V 3.6A MICRO8 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 20nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 590pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: Micro8™	от 0,00 от 0,00	Доп. информация Искать в поставщиках
	IRFU3706-701PBF	International Rectifier	MOSFET N-CH 20V 75A IPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 35nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 2410pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 88W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)	от 0,00	Доп. информация Искать в поставщиках
	IRF1407SPBF	International Rectifier	MOSFET N-CH 75V 100A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 78A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 250nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 5600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	от 0,00 от 0,00	Доп. информация Искать в поставщиках

Каталог с параметрами на 1.401.534 компонентов

Регистрация • Реклама на сайте