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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
IRF540 | Vishay/Siliconix | MOSFET N-CH 100V 28A TO-220AB Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 72nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 1700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFBG30S | Vishay/Siliconix | MOSFET N-CH 1000V 3.1A D2PAK Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.1A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
IRFR310TRL | Vishay/Siliconix | MOSFET N-CH 400V 1.7A DPAK Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 170pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFP064 | Vishay/Siliconix | MOSFET N-CH 60V 70A TO-247AC Rds On (Max) @ Id, Vgs: 9 mOhm @ 78A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 190nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 7400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках | |
IRFBC30AL | Vishay/Siliconix | MOSFET N-CH 600V 3.6A TO-262 Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 510pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF620STRL | Vishay/Siliconix | MOSFET N-CH 200V 5.2A D2PAK Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.1A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.2A · Input Capacitance (Ciss) @ Vds: 260pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR220TRPBF | Vishay/Siliconix | MOSFET N-CH 200V 4.8A DPAK Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.8A · Input Capacitance (Ciss) @ Vds: 260pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF630STRL | Vishay/Siliconix | MOSFET N-CH 200V 9A D2PAK Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF634SPBF | Vishay/Siliconix | MOSFET N-CH 250V 8.1A D2PAK Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.1A · Input Capacitance (Ciss) @ Vds: 770pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
SI7136DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 20V 30A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 78nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 3380pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 39W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFP9240 | Vishay/Siliconix | MOSFET P-CH 200V 12A TO-247AC Rds On (Max) @ Id, Vgs: 500 mOhm @ 7.2A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 44nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках | |
IRLR110TRL | Vishay/Siliconix | MOSFET N-CH 100V 4.3A DPAK Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 6.1nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 4.3A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
SI7812DN-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 75V 16A 1212-8 Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.2A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 840pF @ 35V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 | Доп. информация Искать в поставщиках | |
IRF730ASTRR | Vishay/Siliconix | MOSFET N-CH 400V 5.5A D2PAK Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
SI7374DP-T1-E3 | Vishay/Siliconix | MOSFET N-CH 30V 24A PPAK 8SOIC Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 23.8A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 122nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 5500pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 56W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF9Z20STRR | Vishay/Siliconix | MOSFET P-CH 50V 9.7A D2PAK Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.7A · Input Capacitance (Ciss) @ Vds: 480pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
IRFD014 | Vishay/Siliconix | MOSFET N-CH 60V 1.7A 4-DIP Rds On (Max) @ Id, Vgs: 200 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 11nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 310pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1.3W · Mounting Type: Through Hole · Package / Case: 4-DIP, HVMDIP | от 0,00 | Доп. информация Искать в поставщиках | |
SI3467DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 3.8A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF830ASTRL | Vishay/Siliconix | MOSFET N-CH 500V 5A D2PAK Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 620pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
SUD50N04-8M8P-4GE3 | Vishay/Siliconix | MOSFET N-CH 40V 50A TO-252 Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 56nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 2400pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 48.1W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFPF50 | Vishay/Siliconix | MOSFET N-CH 900V 6.7A TO-247AC Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 2900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках | |
SI7107DN-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 20V 9.8A 1212-8 Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFL214TRPBF | Vishay/Siliconix | MOSFET N-CH 250V 790MA SOT223 Rds On (Max) @ Id, Vgs: 2 Ohm @ 470mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 8.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 790mA · Input Capacitance (Ciss) @ Vds: 140pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFBC40LPBF | Vishay/Siliconix | MOSFET N-CH 600V 6.2A TO-262 Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.2A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SI7720DN-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 30V 12A 1212-8 Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1790pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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