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IRFP460A — MOSFET N-CH 500V 20A TO-247AC
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
 | SIB417DK-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 8V 9A SC75-6 Rds On (Max) @ Id, Vgs: 52 mOhm @ 5.6A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 12.75nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 675pF @ 4V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 13W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-75-6L | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFI624G | Vishay/Siliconix | MOSFET N-CH 250V 3.4A TO220FP Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.4A · Input Capacitance (Ciss) @ Vds: 260pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | Доп. информация Искать в поставщиках | |
 | SI3455ADV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 2.7A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFP460 | Vishay/Siliconix | MOSFET N-CH 500V 20A TO-247AC Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 4200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках |
| SI7454DP-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 100V 5A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 34 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5A · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.9W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRFU420 | Vishay/Siliconix | MOSFET N-CH 500V 2.4A I-PAK Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 19nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 360pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRF740ALPBF | Vishay/Siliconix | MOSFET N-CH 400V 10A TO-262 Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 36nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1030pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7411DN-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 20V 7.5A 1212-8 Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 41nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 7.5A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRLZ14S | Vishay/Siliconix | MOSFET N-CH 60V 10A D2PAK Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 8.4nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SIA411DJ-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 12A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 38nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1200pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 19W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SC-70-6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFPS30N60KPBF | Vishay/Siliconix | MOSFET N-CH 600V 30A SUPER247 Rds On (Max) @ Id, Vgs: 190 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 220nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 5870pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 450W · Mounting Type: Through Hole · Package / Case: Super-247 | Доп. информация Искать в поставщиках | |
 | IRFL9014PBF | Vishay/Siliconix | MOSFET P-CH 60V 1.8A SOT223 Rds On (Max) @ Id, Vgs: 500 mOhm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 270pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 | Доп. информация Искать в поставщиках |
 | IRF630 | Vishay/Siliconix | MOSFET N-CH 200V 9A TO-220AB Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
| IRF644 | Vishay/Siliconix | MOSFET N-CH 250V 14A TO-220AB Rds On (Max) @ Id, Vgs: 280 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 68nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF540PBF | Vishay/Siliconix | MOSFET N-CH 100V 28A TO-220AB Rds On (Max) @ Id, Vgs: 77 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 72nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 1700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7423DN-T1-E3 | Vishay/Siliconix | MOSFET P-CH 30V 7.4A 1212-8 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 18 mOhm @ 11.7A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 56nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.4A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI1499DH-T1-E3 | Vishay/Siliconix | MOSFET P-CH 8V 1.6A SC70-6 Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V · Drain to Source Voltage (Vdss): 8V · Gate Charge (Qg) @ Vgs: 16nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 650pF @ 4V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.78W · Mounting Type: Surface Mount · Package / Case: SC-70-6, SC-88, SOT-323-6, SOT-363 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | SI7726DN-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 30V 35A 1212-8 Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1765pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFR9214PBF | Vishay/Siliconix | MOSFET P-CH 250V 2.7A DPAK Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.7A · Input Capacitance (Ciss) @ Vds: 220pf @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRLL110 | Vishay/Siliconix | MOSFET N-CH 100V 1.5A SOT223 Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 6.1nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFIZ48G | Vishay/Siliconix | MOSFET N-CH 60V 37A TO220FP Rds On (Max) @ Id, Vgs: 18 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 37A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRLIZ14GPBF | Vishay/Siliconix | MOSFET N-CH 60V 8A TO220FP Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.8A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 8.4nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 27W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFZ34ESTRR | Vishay/Siliconix | MOSFET N-CH 60V 28A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IRFI720G | Vishay/Siliconix | MOSFET N-CH 400V 2.6A TO220FP Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.6A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.6A · Input Capacitance (Ciss) @ Vds: 410pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB | от 0,00 | Доп. информация Искать в поставщиках |
 | SI7322DN-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 100V 18A 1212-8 Rds On (Max) @ Id, Vgs: 58 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 750pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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