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IRFPS3810 — MOSFET N-CH 100V 170A SUPER247
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| IRF8010STRLPBF | International Rectifier | MOSFET N-CH 100V 80A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 45A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3830pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 260W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
 | SI4410DYPBF | International Rectifier | MOSFET N-CH 30V 10A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1585pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRL3103LPBF | International Rectifier | MOSFET N-CH 30V 64A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 64A · Input Capacitance (Ciss) @ Vds: 1650pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 94W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFR4104TRPBF | International Rectifier | MOSFET N-CH 40V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 89nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2950pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
 | IRF9530NSTRR | International Rectifier | MOSFET P-CH 100V 14A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 760pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFR13N15DTRPBF | International Rectifier | MOSFET N-CH 150V 14A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 180 mOhm @ 8.3A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 620pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 86W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRL1404ZLPBF | International Rectifier | MOSFET N-CH 40V 75A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 110nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 5080pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-262 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRF7404 | International Rectifier | MOSFET P-CH 20V 6.7A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 1500pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFS59N10DTRL | International Rectifier | MOSFET N-CH 100V 59A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 114nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 59A · Input Capacitance (Ciss) @ Vds: 2450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRFSL3806PBF | International Rectifier | MOSFET N-CH 60V 43A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 43A · Input Capacitance (Ciss) @ Vds: 1150pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 71W · Mounting Type: Through Hole · Package / Case: TO-262 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRLU3717PBF | International Rectifier | MOSFET N-CH 20V 120A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 31nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 2830pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 89W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF7811ATR | International Rectifier | MOSFET N-CH 28V 11.4A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V · Drain to Source Voltage (Vdss): 28V · Gate Charge (Qg) @ Vgs: 23nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 11.4A · Input Capacitance (Ciss) @ Vds: 1800pF @ 16V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | |
| IRFZ44VLPBF | International Rectifier | MOSFET N-CH 60V 55A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 31A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 1812pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 115W · Mounting Type: Through Hole · Package / Case: TO-262 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRF7854TRPBF | International Rectifier | MOSFET N-CH 80V 10A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 80V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 1620pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: SO-8 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRF6609 | International Rectifier | MOSFET N-CH 20V 31A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2 mOhm @ 31A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 69nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 6290pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric MT | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFB3006PBF | International Rectifier | MOSFET N-CH 60V 195A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 300nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 195A · Input Capacitance (Ciss) @ Vds: 8970pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 375W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFP90N20DPBF | International Rectifier | MOSFET N-CH 200V 94A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 56A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 270nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 94A · Input Capacitance (Ciss) @ Vds: 6040pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 580W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF3711S | International Rectifier | MOSFET N-CH 20V 110A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 2980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
| IRLR7833PBF | International Rectifier | MOSFET N-CH 30V 140A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 140A · Input Capacitance (Ciss) @ Vds: 4010pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
| IRFR5505CPBF | International Rectifier | MOSFET P-CH 55V 18A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 650pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 57W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRFR4105PBF | International Rectifier | MOSFET N-CH 55V 27A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 45 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 34nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 700pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 68W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
| IRFR3711ZCPBF | International Rectifier | MOSFET N-CH 20V 93A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 27nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 93A · Input Capacitance (Ciss) @ Vds: 2160pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 79W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRF7834PBF | International Rectifier | MOSFET N-CH 30V 19A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 3710pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках |
| IRL1104L | International Rectifier | MOSFET N-CH 40V 104A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 68nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 104A · Input Capacitance (Ciss) @ Vds: 3445pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.4W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
 | IRF6722STR1PBF | International Rectifier | MOSFET N-CH 30V 13A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 1320pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.2W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric ST | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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