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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
IRFBG30S | Vishay/Siliconix | MOSFET N-CH 1000V 3.1A D2PAK Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 80nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.1A · Input Capacitance (Ciss) @ Vds: 980pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
IRFP064 | Vishay/Siliconix | MOSFET N-CH 60V 70A TO-247AC Rds On (Max) @ Id, Vgs: 9 mOhm @ 78A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 190nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 7400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках | |
IRFBC30AL | Vishay/Siliconix | MOSFET N-CH 600V 3.6A TO-262 Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 510pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF630STRL | Vishay/Siliconix | MOSFET N-CH 200V 9A D2PAK Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 43nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 800pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF634SPBF | Vishay/Siliconix | MOSFET N-CH 250V 8.1A D2PAK Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.1A · Input Capacitance (Ciss) @ Vds: 770pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
SI7812DN-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 75V 16A 1212-8 Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.2A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 840pF @ 35V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 | Доп. информация Искать в поставщиках | |
IRF730ASTRR | Vishay/Siliconix | MOSFET N-CH 400V 5.5A D2PAK Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 600pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 74W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF9Z20STRR | Vishay/Siliconix | MOSFET P-CH 50V 9.7A D2PAK Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V · Drain to Source Voltage (Vdss): 50V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9.7A · Input Capacitance (Ciss) @ Vds: 480pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
SI3467DV-T1-E3 | Vishay/Siliconix | MOSFET P-CH 20V 3.8A 6-TSOP Серия: TrenchFET® · Rds On (Max) @ Id, Vgs: 54 mOhm @ 5A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.14W · Mounting Type: Surface Mount · Package / Case: 6-TSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFPF50 | Vishay/Siliconix | MOSFET N-CH 900V 6.7A TO-247AC Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V · Drain to Source Voltage (Vdss): 900V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.7A · Input Capacitance (Ciss) @ Vds: 2900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 190W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 | Доп. информация Искать в поставщиках | |
SI7107DN-T1-GE3 | Vishay/Siliconix | MOSFET P-CH 20V 9.8A 1212-8 Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9.8A · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFL214TRPBF | Vishay/Siliconix | MOSFET N-CH 250V 790MA SOT223 Rds On (Max) @ Id, Vgs: 2 Ohm @ 470mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 8.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 790mA · Input Capacitance (Ciss) @ Vds: 140pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRFBC40LPBF | Vishay/Siliconix | MOSFET N-CH 600V 6.2A TO-262 Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 60nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.2A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SI7720DN-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 30V 12A 1212-8 Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 1790pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 52W · Mounting Type: Surface Mount · Package / Case: PowerPAK® 1212-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRLZ24 | Vishay/Siliconix | MOSFET N-CH 60V 17A TO-220AB Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 18nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 870pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 60W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
IRL530STRRPBF | Vishay/Siliconix | MOSFET N-CH 100V 15A D2PAK Rds On (Max) @ Id, Vgs: 160 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 28nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 930pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF644NS | Vishay/Siliconix | MOSFET N-CH 250V 14A D2PAK Rds On (Max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 54nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1060pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
IRF530L | Vishay/Siliconix | MOSFET N-CH 100V 14A TO-262 Rds On (Max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 26nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 670pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.7W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRLZ44 | Vishay/Siliconix | MOSFET N-CH 60V 50A TO-220AB Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 66nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3300pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFBG20STRL | Vishay/Siliconix | MOSFET N-CH 1000V 1.4A D2PAK Rds On (Max) @ Id, Vgs: 11 Ohm @ 840mA, 10V · Drain to Source Voltage (Vdss): 1000V (1kV) · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.4A · Input Capacitance (Ciss) @ Vds: 500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 54W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
SI7748DP-T1-GE3 | Vishay/Siliconix | MOSFET N-CH 30V 50A PPAK 8SOIC Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 92nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 3770pF @ 15V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 56W · Mounting Type: Surface Mount · Package / Case: PowerPAK® SO-8 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
IRF840STRR | Vishay/Siliconix | MOSFET N-CH 500V 8A D2PAK Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRF840S | Vishay/Siliconix | MOSFET N-CH 500V 8A D2PAK Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
IRFR11N25D | Vishay/Siliconix | MOSFET N-CH 250V DPAK Drain to Source Voltage (Vdss): 250V · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
IRFPC60PBF | Vishay/Siliconix | MOSFET N-CH 600V 16A TO-247AC Rds On (Max) @ Id, Vgs: 400 mOhm @ 9.6A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 210nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 3900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 280W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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