 |
IRLR8103TR — MOSFET N-CH 30V 89A DPAK
| ||||||||||||||||||||||||
| Войти Регистрация |
|
|||||||||||||||||||||||||||
| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| IRF7832ZTRPBF | International Rectifier | MOSFET N-CH 30V 21A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 3860pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: SO-8 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRFR3103TRR | International Rectifier | MOSFET N-CH 400V 1.7A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 170pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | |
| IRLU7833-701PBF | International Rectifier | MOSFET N-CH 30V 140A IPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 140A · Input Capacitance (Ciss) @ Vds: 4010pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRFR13N15DTR | International Rectifier | MOSFET N-CH 150V 14A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 180 mOhm @ 8.3A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 620pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 86W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
| IRFR5410TR | International Rectifier | MOSFET P-CH 100V 13A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 58nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 760pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 66W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
 | IRF7701GTRPBF | International Rectifier | MOSFET P-CH 12V 10A 8-TSSOP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V · Drain to Source Voltage (Vdss): 12V · Gate Charge (Qg) @ Vgs: 100nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 10A · Input Capacitance (Ciss) @ Vds: 5050pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-TSSOP | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRF6620 | International Rectifier | MOSFET N-CH 20V 27A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 27A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 42nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 4130pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.8W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric MX | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFP054NPBF | International Rectifier | MOSFET N-CH 55V 81A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 81A · Input Capacitance (Ciss) @ Vds: 2900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 170W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFS23N20DTRRP | International Rectifier | MOSFET N-CH 200V 24A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 86nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 1960pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRLR3705ZPBF | International Rectifier | MOSFET N-CH 55V 42A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 66nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 42A · Input Capacitance (Ciss) @ Vds: 2900pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 130W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRLR8715CTRPBF | International Rectifier | MOSFET N-CH 25V 51A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 10nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 51A · Input Capacitance (Ciss) @ Vds: 830pF @ 13V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 44W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRLU7843PBF | International Rectifier | MOSFET N-CH 30V 161A I-PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 161A · Input Capacitance (Ciss) @ Vds: 4380pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFB23N20D | International Rectifier | MOSFET N-CH 200V 24A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 86nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 24A · Input Capacitance (Ciss) @ Vds: 1960pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
| IRL8113 | International Rectifier | MOSFET N-CH 30V 105A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 35nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 105A · Input Capacitance (Ciss) @ Vds: 2840pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 110W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
| IRLL2705TR | International Rectifier | MOSFET N-CH 55V 3.8A SOT223 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 40 mOhm @ 3.8A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 3.8A · Input Capacitance (Ciss) @ Vds: 870pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRFIZ44NPBF | International Rectifier | MOSFET N-CH 55V 31A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 24 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 1300pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 45W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFSL4310PBF | International Rectifier | MOSFET N-CH 100V 130A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 250nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 130A · Input Capacitance (Ciss) @ Vds: 7670pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-262 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRF3415 | International Rectifier | MOSFET N-CH 150V 43A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 43A · Input Capacitance (Ciss) @ Vds: 2400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRF7204 | International Rectifier | MOSFET P-CH 20V 5.3A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 25nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.3A · Input Capacitance (Ciss) @ Vds: 860pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | |
| IRLI530N | International Rectifier | MOSFET N-CH 100V 12A TO220FP Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A. 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 34nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 12A · Input Capacitance (Ciss) @ Vds: 800pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 41W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | Доп. информация Искать в поставщиках | |
| IRLR3714ZPBF | International Rectifier | MOSFET N-CH 20V 37A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 7.1nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 37A · Input Capacitance (Ciss) @ Vds: 560pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 35W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
 | IRF1010ELPBF | International Rectifier | MOSFET N-CH 60V 84A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 130nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 84A · Input Capacitance (Ciss) @ Vds: 3210pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRF7805ATR | International Rectifier | MOSFET N-CH 30V 13A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 31nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 13A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFR3709ZTRPBF | International Rectifier | MOSFET N-CH 30V 86A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 26nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 86A · Input Capacitance (Ciss) @ Vds: 2330pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 79W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRLBD59N04ETRLP | International Rectifier | MOSFET N-CH 40V 59A D2PAK-5 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 50nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 59A · Input Capacitance (Ciss) @ Vds: 2190pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 130W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (5 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| © 2006 — 2024 Капитал Плюс Телефон, e-mail, ICQ для связи |
Каталог с параметрами на 1.401.534 компонентов | Регистрация • Реклама на сайте |
