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IRLU024N — MOSFET N-CH 55V 17A I-PAK
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| IRFR13N15DTRPBF | International Rectifier | MOSFET N-CH 150V 14A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 180 mOhm @ 8.3A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 620pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 86W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| IRL1404ZLPBF | International Rectifier | MOSFET N-CH 40V 75A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 110nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 5080pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200W · Mounting Type: Through Hole · Package / Case: TO-262 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRFSL3806PBF | International Rectifier | MOSFET N-CH 60V 43A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 30nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 43A · Input Capacitance (Ciss) @ Vds: 1150pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 71W · Mounting Type: Through Hole · Package / Case: TO-262 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRF6609 | International Rectifier | MOSFET N-CH 20V 31A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2 mOhm @ 31A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 69nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 31A · Input Capacitance (Ciss) @ Vds: 6290pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric MT | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFB3006PBF | International Rectifier | MOSFET N-CH 60V 195A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 300nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 195A · Input Capacitance (Ciss) @ Vds: 8970pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 375W · Mounting Type: Through Hole · Package / Case: TO-220AB | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFP90N20DPBF | International Rectifier | MOSFET N-CH 200V 94A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 56A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 270nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 94A · Input Capacitance (Ciss) @ Vds: 6040pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 580W · Mounting Type: Through Hole · Package / Case: TO-247-3 (Straight Leads), TO-247AC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRF3711S | International Rectifier | MOSFET N-CH 20V 110A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 110A · Input Capacitance (Ciss) @ Vds: 2980pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
 | IRLR7833PBF | International Rectifier | MOSFET N-CH 30V 140A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 140A · Input Capacitance (Ciss) @ Vds: 4010pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 140W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
| IRFR5505CPBF | International Rectifier | MOSFET P-CH 55V 18A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 650pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 57W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRF7834PBF | International Rectifier | MOSFET N-CH 30V 19A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 44nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 3710pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках |
 | IRL1104L | International Rectifier | MOSFET N-CH 40V 104A TO-262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 68nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 104A · Input Capacitance (Ciss) @ Vds: 3445pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.4W · Mounting Type: Through Hole · Package / Case: TO-262-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
 | IRF6722STR1PBF | International Rectifier | MOSFET N-CH 30V 13A DIRECTFET Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 1320pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.2W · Mounting Type: Surface Mount · Package / Case: DirectFET™ Isometric ST | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRFS4310 | International Rectifier | MOSFET N-CH 100V 140A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 250nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 140A · Input Capacitance (Ciss) @ Vds: 7670pF @ 50V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 330W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFP4229PBF | International Rectifier | MOSFET N-CH 250V 44A TO-247AC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 46 mOhm @ 26A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 110nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 44A · Input Capacitance (Ciss) @ Vds: 4560pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 310W · Mounting Type: Through Hole · Package / Case: TO-247AC | от 0,00 | Доп. информация Искать в поставщиках | |
 | IRF1405ZS-7P | International Rectifier | MOSFET N-CH 55V 120A D2PAK7 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 88A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 230nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 5360pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 230W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (7 leads + tab) | Доп. информация Искать в поставщиках | |
 | IRF1405 | International Rectifier | MOSFET N-CH 55V 169A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 260nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 169A · Input Capacitance (Ciss) @ Vds: 5480pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 330W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFS38N20DTRLP | International Rectifier | MOSFET N-CH 200V 43A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 54 mOhm @ 26A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 91nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 43A · Input Capacitance (Ciss) @ Vds: 2900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| IRFZ24NSTRL | International Rectifier | MOSFET N-CH 55V 17A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 17A · Input Capacitance (Ciss) @ Vds: 370pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRF1010NS | International Rectifier | MOSFET N-CH 55V 85A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 120nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 85A · Input Capacitance (Ciss) @ Vds: 3210pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 180W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | |
 | IRFZ44NPBF | International Rectifier | MOSFET N-CH 55V 49A TO-220AB Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 63nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 49A · Input Capacitance (Ciss) @ Vds: 1470pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 94W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | IRFSL3004PBF | International Rectifier | MOSFET N-CH 40V 195A TO262 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 195A · Input Capacitance (Ciss) @ Vds: 9200pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 380W · Mounting Type: Through Hole · Package / Case: TO-262 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| IRL2203NSTRR | International Rectifier | MOSFET N-CH 30V 116A D2PAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 60nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 116A · Input Capacitance (Ciss) @ Vds: 3290pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.8W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках |
| IRFR12N25D | International Rectifier | MOSFET N-CH 250V 14A DPAK Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 810pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 144W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках |
 | IRLML2402TR | International Rectifier | MOSFET N-CH 20V 1.2A SOT-23 Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 250 mOhm @ 930mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 3.9nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 1.2A · Input Capacitance (Ciss) @ Vds: 110pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 540mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 | Доп. информация Искать в поставщиках |
| IRF7494TRPBF | International Rectifier | MOSFET N-CH 150V 5.2A 8-SOIC Серия: HEXFET® · Rds On (Max) @ Id, Vgs: 44 mOhm @ 3.1A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 54nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.2A · Input Capacitance (Ciss) @ Vds: 1750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3W · Mounting Type: Surface Mount · Package / Case: SO-8 | от 0,00 | Доп. информация Искать в поставщиках |
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