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MTD3055VL — MOSFET N-CH 60V 12A DPAK
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| Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
| FQU8P10TU | Fairchild Semiconductor | MOSFET P-CH 100V 6.6A IPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6.6A · Input Capacitance (Ciss) @ Vds: 470pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
| HUFA75829D3S | Fairchild Semiconductor | MOSFET N-CH 150V 18A DPAK Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 110 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 70nC @ 20V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 1080pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 110W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
| FQU20N06TU | Fairchild Semiconductor | MOSFET N-CH 60V 16.8A IPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 63 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16.8A · Input Capacitance (Ciss) @ Vds: 590pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
 | FDD6760A | Fairchild Semiconductor | MOSFET N-CH 25V 27A DPAK Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 27A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 62nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 27A · Input Capacitance (Ciss) @ Vds: 3170pF @ 13V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.7W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | FDD6N50TM_WS | Fairchild Semiconductor | MOSFET N-CH 500V 6A DPAK Серия: UniFET™ · Rds On (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 16.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 6A · Input Capacitance (Ciss) @ Vds: 940pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 89W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| FDS3680 | Fairchild Semiconductor | MOSFET N-CH 100V 5.2A 8-SOIC Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 46 mOhm @ 5.2A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 53nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.2A · Input Capacitance (Ciss) @ Vds: 1735pF @ 50V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | Доп. информация Искать в поставщиках | ||
| FQB32N12V2TM | Fairchild Semiconductor | MOSFET N-CH 120V 32A D2PAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V · Drain to Source Voltage (Vdss): 120V · Gate Charge (Qg) @ Vgs: 53nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 32A · Input Capacitance (Ciss) @ Vds: 1860pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
 | FQPF3P20 | Fairchild Semiconductor | MOSFET P-CH 200V 2.2A TO-220F Серия: QFET™ · Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.2A · Input Capacitance (Ciss) @ Vds: 250pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 32W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
 | FQP16N25 | Fairchild Semiconductor | MOSFET N-CH 250V 16A TO-220 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 230 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 35nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 142W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
| FCA16N60_F109 | Fairchild Semiconductor | MOSFET N-CH 600V 16A TO-3P Серия: SuperFET™ · Rds On (Max) @ Id, Vgs: 260 mOhm @ 8A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 70nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16A · Input Capacitance (Ciss) @ Vds: 2250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 167W · Mounting Type: Through Hole · Package / Case: TO-3PN-3 | Доп. информация Искать в поставщиках | ||
| FQPF5N60 | Fairchild Semiconductor | MOSFET N-CH 600V 2.8A TO-220F Серия: QFET™ · Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.4A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.8A · Input Capacitance (Ciss) @ Vds: 730pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | Доп. информация Искать в поставщиках | |
 | IRFR230BTM_AM002 | Fairchild Semiconductor | MOSFET N-CH 200V 7.5A DPAK Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.75A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.5A · Input Capacitance (Ciss) @ Vds: 720pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | |
| FQD3P50TF | Fairchild Semiconductor | MOSFET P-CH 500V 2.1A DPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 4.9 Ohm @ 1.05A, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 23nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.1A · Input Capacitance (Ciss) @ Vds: 660pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | |
| 2N7002_NB9G002 | Fairchild Semiconductor | MOSFET N-CH 60V 115MA SOT-23 Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 115mA · Input Capacitance (Ciss) @ Vds: 50pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 200mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | Доп. информация Искать в поставщиках | ||
| FQP17P10 | Fairchild Semiconductor | MOSFET P-CH 100V 16.5A TO-220 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 8.25A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 39nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16.5A · Input Capacitance (Ciss) @ Vds: 1100pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках |
 | FDC6392S | Fairchild Semiconductor | MOSFET P-CH 20V 2.2A SSOT-6 Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 5.2nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.2A · Input Capacitance (Ciss) @ Vds: 369pF @ 10V · FET Polarity: P-Channel · FET Feature: Diode (Isolated) · Power - Max: 700mW · Mounting Type: Surface Mount · Package / Case: 6-SSOT, SuperSOT-6 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
| HUFA75345S3S | Fairchild Semiconductor | MOSFET N-CH 55V 75A D2PAK Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 275nC @ 20V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 4000pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 325W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
| FCI11N60 | Fairchild Semiconductor | MOSFET N-CH 600V 11A I2PAK Серия: SuperFET™ · Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 52nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1490pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
| FDI040N06 | Fairchild Semiconductor | MOSFET N-CH 60V 120A I2PAK Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 133nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120A · Input Capacitance (Ciss) @ Vds: 8235pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 231W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
| IRF630BTSTU_FP001 | Fairchild Semiconductor | MOSFET N-CH 200V 9A TO-220 Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 720pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 72W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
 | FCH20N60 | Fairchild Semiconductor | MOSFET N-CH 600V 20A TO-247 Серия: SuperFET™ · Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 98nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 3080pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 208W · Mounting Type: Through Hole · Package / Case: TO-247-3 | Доп. информация Искать в поставщиках | |
| FQA7N60 | Fairchild Semiconductor | MOSFET N-CH 600V 7.7A TO-3P Серия: QFET™ · Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.9A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.7A · Input Capacitance (Ciss) @ Vds: 1430pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 152W · Mounting Type: Through Hole · Package / Case: TO-3P-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
 | HUF75623P3 | Fairchild Semiconductor | MOSFET N-CH 100V 22A TO-220AB Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 64 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 52nC @ 20V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 85W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | |
 | FDP19N40 | Fairchild Semiconductor | MOSFET N-CH 400V 19A TO-220 Серия: UniFET™ · Rds On (Max) @ Id, Vgs: 240 mOhm @ 9.5A, 10V · Drain to Source Voltage (Vdss): 400V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 19A · Input Capacitance (Ciss) @ Vds: 2115pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 215W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
 | FQP50N06L | Fairchild Semiconductor | MOSFET N-CH 60V 52.4A TO-220 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 21 mOhm @ 26.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 32nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 52.4A · Input Capacitance (Ciss) @ Vds: 1630pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 121W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках |
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