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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
HUF76629D3 | Fairchild Semiconductor | MOSFET N-CH 100V 20A IPAK Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 46nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1285pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 110W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
FQN1N60CBU | Fairchild Semiconductor | MOSFET N-CH 600V 0.3A TO-92 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 150mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 6.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 170pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 1W · Mounting Type: Through Hole · Package / Case: TO-92-3 (Standard Body), TO-226 | Доп. информация Искать в поставщиках | ||
NDP603AL | Fairchild Semiconductor | MOSFET N-CH 30V 25A TO-220AB Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 1100pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
FQI5N30TU | Fairchild Semiconductor | MOSFET N-CH 300V 5.4A I2PAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.7A, 10V · Drain to Source Voltage (Vdss): 300V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 5.4A · Input Capacitance (Ciss) @ Vds: 430pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 3.13W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | Доп. информация Искать в поставщиках | ||
HUFA75329P3 | Fairchild Semiconductor | MOSFET N-CH 55V 49A TO-220AB Серия: UltraFET™ · Rds On (Max) @ Id, Vgs: 24 mOhm @ 49A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 75nC @ 20V · Current - Continuous Drain (Id) @ 25° C: 49A · Input Capacitance (Ciss) @ Vds: 1060pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 128W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | от 0,00 | Доп. информация Искать в поставщиках | |
FQD3N60TM | Fairchild Semiconductor | MOSFET N-CH 600V 2.4A DPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.4A · Input Capacitance (Ciss) @ Vds: 450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Доп. информация Искать в поставщиках | ||
FDB6021P | Fairchild Semiconductor | MOSFET P-CH 20V 28A TO-263AB Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 30 mOhm @ 14A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 28nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 28A · Input Capacitance (Ciss) @ Vds: 1890pF @ 10V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 37W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
FDB8876 | Fairchild Semiconductor | MOSFET N-CH 30V 71A D2PAK Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 40A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 71A · Input Capacitance (Ciss) @ Vds: 1700pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 70W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Доп. информация Искать в поставщиках | ||
FQD20N06TM | Fairchild Semiconductor | MOSFET N-CH 60V 16.8A DPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 63 mOhm @ 8.4A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 16.8A · Input Capacitance (Ciss) @ Vds: 590pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
FDPF44N25T | Fairchild Semiconductor | MOSFET N-CH 250V 44A TO-220F Серия: UniFET™ · Rds On (Max) @ Id, Vgs: 69 mOhm @ 22A, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 61nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 44A · Input Capacitance (Ciss) @ Vds: 2870pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 38W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
FDD3682 | Fairchild Semiconductor | MOSFET N-CH 100V 32A D-PAK Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 36 mOhm @ 32A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 32A · Input Capacitance (Ciss) @ Vds: 1250pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 95W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
FQP1P50 | Fairchild Semiconductor | MOSFET P-CH 500V 1.5A TO-220 Серия: QFET™ · Rds On (Max) @ Id, Vgs: 10.5 Ohm @ 750mA, 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.5A · Input Capacitance (Ciss) @ Vds: 350pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 63W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
FDS6673AZ | Fairchild Semiconductor | MOSFET P-CH 30V 14.5A 8SOIC Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 14.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 118nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14.5A · Input Capacitance (Ciss) @ Vds: 4480pF @ 15V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 | Доп. информация Искать в поставщиках | |
FDB13AN06A0 | Fairchild Semiconductor | MOSFET N-CH 60V 62A TO-263AB Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 62A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 29nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 62A · Input Capacitance (Ciss) @ Vds: 1350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 115W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
FDS4080N3 | Fairchild Semiconductor | MOSFET N-CH 40V 13A 8-SOIC Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 13A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 13A · Input Capacitance (Ciss) @ Vds: 1750pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
FQB50N06LTM | Fairchild Semiconductor | MOSFET N-CH 60V 52.4A D2PAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 21 mOhm @ 26.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 32nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 52.4A · Input Capacitance (Ciss) @ Vds: 1630pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 3.75W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
FCPF22N60NT | Fairchild Semiconductor | MOSFET N-CH 600V 22A TO-220F Серия: SupreMOS™ · Rds On (Max) @ Id, Vgs: 165 mOhm @ 11A, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 45nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 22A · Input Capacitance (Ciss) @ Vds: 1950pF @ 100V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 39W · Mounting Type: Through Hole · Package / Case: TO-220-3 Full Pack (Straight Leads) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
FQU2N50BTU_WS | Fairchild Semiconductor | MOSFET N-CH 500V 1.6A IPAK Серия: QFET™ · Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 800mA , 10V · Drain to Source Voltage (Vdss): 500V · Gate Charge (Qg) @ Vgs: 8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.6A · Input Capacitance (Ciss) @ Vds: 230pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
FDB8445 | Fairchild Semiconductor | MOSFET N-CH 40V 70A D2PAK Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 9 mOhm @ 70A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 62nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 3805pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 92W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
SSR1N60BTM_F080 | Fairchild Semiconductor | MOSFET N-CH 600V 0.9A DPAK Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 7.7nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 900mA · Input Capacitance (Ciss) @ Vds: 215pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
FDP5680 | Fairchild Semiconductor | MOSFET N-CH 60V 40A TO-220 Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 46nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 1850pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Through Hole · Package / Case: TO-220-3 (Straight Leads) | Доп. информация Искать в поставщиках | ||
FDMS8672AS | Fairchild Semiconductor | MOSFET N-CH 30V 18A POWER56 Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 5 mOhm @ 18A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 40nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18A · Input Capacitance (Ciss) @ Vds: 2600pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-PQFN, Power56 | от 0,00 | Доп. информация Искать в поставщиках | |
FDS3672 | Fairchild Semiconductor | MOSFET N-CH 100V 7.5A 8-SOIC Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 37nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 7.5A · Input Capacitance (Ciss) @ Vds: 2015pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
FDS7088N7 | Fairchild Semiconductor | MOSFET N-CH 30V 23A 8-SOIC Серия: PowerTrench® · Rds On (Max) @ Id, Vgs: 3 mOhm @ 23A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 48nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 23A · Input Capacitance (Ciss) @ Vds: 3845pF @ 15V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.5W · Mounting Type: Surface Mount · Package / Case: 8-SOIC (3.9mm Width) Exposed Pad, 8-eSOIC. 8-HSOIC | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
FQA65N20 | Fairchild Semiconductor | MOSFET N-CH 200V 65A TO-3P Серия: QFET™ · Rds On (Max) @ Id, Vgs: 32 mOhm @ 32.5A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 200nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 7900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 310W · Mounting Type: Through Hole · Package / Case: TO-3PN-3 | от 0,00 | Доп. информация Искать в поставщиках |
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