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Фото | Наименование | Производитель | Тех. параметры | Цены (руб.) | Купить |
PH3830L,115 | NXP Semiconductors | MOSFET N-CH 30V 98A LFPAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 33nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 98A · Input Capacitance (Ciss) @ Vds: 3190pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 62.5W · Mounting Type: Surface Mount · Package / Case: LFPak-4 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
PSMN030-150P,127 | NXP Semiconductors | MOSFET N-CH 150V 55.5A SOT78 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 30 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 98nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 55.5A · Input Capacitance (Ciss) @ Vds: 3680pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | от 0,00 | Доп. информация Искать в поставщиках | |
BUK7604-40A,118 | NXP Semiconductors | MOSFET N-CH 40V 75A SOT404 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 117nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 5730pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
PHP14NQ20T,127 | NXP Semiconductors | MOSFET N-CH 200V 14A SOT78 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 230 mOhm @ 7A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 38nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 14A · Input Capacitance (Ciss) @ Vds: 1500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | от 0,00 | Доп. информация Искать в поставщиках | |
PMV31XN,215 | NXP Semiconductors | MOSFET N-CH 20V 5.9A SOT-23 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 37 mOhm @ 1.5A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 5.8nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 5.9A · Input Capacitance (Ciss) @ Vds: 410pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
PMN23UN,165 | NXP Semiconductors | MOSFET N-CH 20V 6.3A 6TSOP Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 28 mOhm @ 2A, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 10.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 6.3A · Input Capacitance (Ciss) @ Vds: 740pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.75W · Mounting Type: Surface Mount · Package / Case: SC-74-6 | от 0,00 | Доп. информация Искать в поставщиках | |
BUK7606-75B,118 | NXP Semiconductors | MOSFET N-CH 75V 75A D2PAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 91nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 7446pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
BST82,235 | NXP Semiconductors | MOSFET N-CH 100V 190MA SOT-23 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 5V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 190mA · Input Capacitance (Ciss) @ Vds: 40pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 830mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 | Доп. информация Искать в поставщиках | |
PMZ270XN,315 | NXP Semiconductors | MOSFET N-CH 20V 2.15A SOT883 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V · Drain to Source Voltage (Vdss): 20V · Gate Charge (Qg) @ Vgs: 0.72nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 2.15A · Input Capacitance (Ciss) @ Vds: 34pF @ 20V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: SC-101, SOT-883 | от 0,00 | Доп. информация Искать в поставщиках | |
PH6325L,115 | NXP Semiconductors | MOSFET N-CH 25V 78.7A LFPAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 25V · Gate Charge (Qg) @ Vgs: 13.3nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 78.7A · Input Capacitance (Ciss) @ Vds: 1871pF @ 12V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 62.5W · Mounting Type: Surface Mount · Package / Case: LFPak-4 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
BUK9840-55,115 | NXP Semiconductors | MOSFET N-CH 55V 5A SOT223 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 5V · Drain to Source Voltage (Vdss): 55V · Current - Continuous Drain (Id) @ 25° C: 5A · Input Capacitance (Ciss) @ Vds: 1400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | от 0,00 | Доп. информация Искать в поставщиках | |
PSMN057-200B,118 | NXP Semiconductors | MOSFET N-CH 200V 39A SOT404 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 57 mOhm @ 17A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 96nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 39A · Input Capacitance (Ciss) @ Vds: 3750pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
BUK754R3-75C,127 | NXP Semiconductors | MOSFET N-CH TRENCH 75V TO220AB-3 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 142nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 100A · Input Capacitance (Ciss) @ Vds: 11659pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 333W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | от 0,00 | Доп. информация Искать в поставщиках | |
PSMN005-55B,118 | NXP Semiconductors | MOSFET N-CH 55V 75A SOT404 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 103nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 6500pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 230W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
BSH111,215 | NXP Semiconductors | MOSFET N-CH 55V 335MA SOT-23 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 1nC @ 8V · Current - Continuous Drain (Id) @ 25° C: 335mA · Input Capacitance (Ciss) @ Vds: 40pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 830mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
PMBF170,235 | NXP Semiconductors | MOSFET N-CH TRENCH 60V SOT-23 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 300mA · Input Capacitance (Ciss) @ Vds: 40pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 830mW · Mounting Type: Surface Mount · Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | от 0,00 | Доп. информация Искать в поставщиках | |
BUK9520-55A,127 | NXP Semiconductors | MOSFET N-CH 55V 54A TO220AB Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 18 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Current - Continuous Drain (Id) @ 25° C: 54A · Input Capacitance (Ciss) @ Vds: 2210pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 118W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | от 0,00 | Доп. информация Искать в поставщиках | |
BUK9E08-55B,127 | NXP Semiconductors | MOSFET N-CH TRENCH 55V I2PAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 45nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 5280pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 203W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-220AB (3 straight leads + tab) | от 0,00 | Доп. информация Искать в поставщиках | |
PMN34UN,135 | NXP Semiconductors | MOSFET N-CH 30V 4.9A SOT457 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 46 mOhm @ 2A, 4.5V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 9.9nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 4.9A · Input Capacitance (Ciss) @ Vds: 790pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.75W · Mounting Type: Surface Mount · Package / Case: SC-74-6 | от 0,00 | Доп. информация Искать в поставщиках | |
BUK7214-75B,118 | NXP Semiconductors | MOSFET N-CH 75V 70A DPAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 14 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 75V · Gate Charge (Qg) @ Vgs: 41nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 2612pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 167W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
PHB191NQ06LT,118 | NXP Semiconductors | MOSFET N-CH 55V 75A D2PAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 95.6nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 7665pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
PHD9NQ20T,118 | NXP Semiconductors | MOSFET N-CH 200V 8.7A SOT428 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 24nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.7A · Input Capacitance (Ciss) @ Vds: 959pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 88W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
PH4530L,115 | NXP Semiconductors | MOSFET N-CH 30V 80A LFPAK Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 23.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 1972pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 62.5W · Mounting Type: Surface Mount · Package / Case: LFPak-4 | от 0,00 от 0,00 | Доп. информация Искать в поставщиках | |
BUK7215-55A,118 | NXP Semiconductors | MOSFET N-CH 55V 55A SOT428 Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 55A · Input Capacitance (Ciss) @ Vds: 2107pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 115W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | от 0,00 | Доп. информация Искать в поставщиках | |
PSMN015-110P,127 | NXP Semiconductors | MOSFET N-CH 110V 75A TO220AB Серия: TrenchMOS™ · Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 110V · Gate Charge (Qg) @ Vgs: 90nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 75A · Input Capacitance (Ciss) @ Vds: 4900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220AB-3 | от 0,00 | Доп. информация Искать в поставщиках |
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